npn silicon high-voltage power transistors . . . designed for use in lineoperated equipment requiring high f t . ? high dc current gain h fe = 40160 @ i c = 20 madc ? current gain bandwidth product e f t = 15 mhz (min) @ i c = 10 madc ? low output capacitance c ob = 10 pf (max) @ f = 1.0 mhz ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 350 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 450 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 5.0 ??? ??? vdc ???????????? ???????????? collector current e continuous ????? ????? i c ?????? ?????? 0.3 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 150 ??? ??? madc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 15 0.12 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 8.33 ??? ??? c/w 16 0 0 40 80 120 160 figure 1. powertemperature derating curve t c , case temperature ( c) p d , power dissipation (watts) 12 14 8.0 10 4.0 6.0 2.0 20 60 100 140 on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: mje3439/d mje3439 0.3 ampere power transistor npn silicon 350 volts 15 watts case 7709 to225aa type 3 2 1 style 1: pin 1. emitter 2. collector 3. base
mje3439 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 5.0 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 350 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 300 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 20 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 450 vdc, v eb(off) = 1.5 vdc) ????? ? ??? ? ????? i cex ??? ? ? ? ??? e ???? ? ?? ? ???? 500 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 350 vdc, i e = 0) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e ???? ? ?? ? ???? 20 ??? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 20 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 2.0 madc, v ce = 10 vdc) (i c = 20 madc, v ce = 10 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 30 15 ???? ? ?? ? ? ?? ? ???? e 200 ??? ? ? ? ? ? ? ??? e ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 50 madc, i b = 4.0 madc) ????? ????? v ce(sat) ??? ??? e ???? ???? 0.5 ??? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 50 madc, i b = 4.0 madc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.3 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 50 madc, v ce = 10 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 0.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? currentgain e bandwidth product (i c = 10 madc, v ce = 10 vdc, f = 5.0 mhz) ????? ????? f t ??? ??? 15 ???? ???? e ??? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? pf ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 5.0 madc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? e ??? ? ? ? ??? e 1.0 1.0 figure 2. activeregion safe operating area v ce , collector-emitter voltage (volts) 0.5 0.3 0.2 0.05 0.001 5.0 10 i c , collector current (amp) 0.02 0.03 2.0 20 50 1000 0.1 100 200 500 mje3439 0.7 0.07 0.01 0.002 0.003 0.005 0.007 3.0 7.0 30 70 300 the safe operating area curves indicate i c v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to insure operation below the maximum t j , powertemperature derating must be observed for both steady state and pulse power conditions.
mje3439 http://onsemi.com 3 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
mje3439 http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje3439/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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