features trenchfet power mosfets new low thermal resistance powerpak package with low 1.07-mm profile pwm optimized for fast switching applications primary side switch SI7462DP vishay siliconix document number: 72136 s-03533?rev. a, 24-mar-03 www.vishay.com 1 n-channel 200-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 200 0.130 @ v gs = 10 v 4.1 200 0.142 @ v gs = 6.0 v 3.9 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7462DP-t1 n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.1 2.6 continuous drain current (t j = 150 c) a t a = 85 c i d 3.0 1.9 a pulsed drain current i dm 12 a avalanche current l = 0 1 mh i as 6 single a valanche energy (duty cycle 1%) l = 0.1 mh e as 1.8 mj continuous source current (diode conduction) a i s 4.0 1.6 a maximum power dissipation a t a = 25 c p d 4.8 1.9 w maximum power dissipation a t a = 85 c p d 2.6 1.0 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 21 26 maximum junction-to-ambient a steady state r thja 55 65 c/w maximum junction-to-case (drain) steady state r thjc 1.7 2.1 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7462DP vishay siliconix www.vishay.com 2 document number: 72136 s-03533?rev. a, 24-mar-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v, t j = 85 c 20 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 12 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 4.1 a 0.110 0.130 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 6.0 v, i d = 3.9 a 0.120 0.142 forward transconductance a g fs v ds = 15 v, i d = 4.1 a 13 s diode forward voltage a v sd i s = 4 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 20 30 gate-source charge q gs v ds = 100 v, v gs = 10 v, i d = 4.1 a 4.5 nc gate-drain charge q gd 6.5 gate resistance r g 2 turn-on delay time t d(on) 15 25 rise time t r v dd = 100 v, r l = 100 15 25 turn-off delay time t d(off) v dd = 100 v , r l = 100 i d 1 a, v gen = 10 v, r g = 6 40 60 ns fall time t f 20 30 source-drain reverse recovery time t rr i f = 4 a, di/dt = 100 a/ s 70 110 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 2 4 6 8 10 12 0123456 0 2 4 6 8 10 12 012345 v gs = 10 thru 6 v t c = 125 c -55 c 4 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 5 v
SI7462DP vishay siliconix document number: 72136 s-03533?rev. a, 24-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 200 400 600 800 1000 1200 1400 1600 0 1020304050607080 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 048121620 0.00 0.04 0.08 0.12 0.16 0.20 024681012 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 100 v i d = 4.1 a i d - drain current (a) v gs = 10 v i d = 4.1 a v gs = 10 v v gs = 6.0 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.04 0.08 0.12 0.16 0.20 0246810 t j = 150 c t j = 25 c i d = 4.1 a 20 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s
SI7462DP vishay siliconix www.vishay.com 4 document number: 72136 s-03533?rev. a, 24-mar-03 typical characteristics (25 c unless noted) 0 60 80 20 40 power (w) single pulse power time (sec) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 55 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 600 10 0.1 0.01 100 safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 1000 0.001 10 t a = 25 c single pulse - drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 0.01 100
SI7462DP vishay siliconix document number: 72136 s-03533?rev. a, 24-mar-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse
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