savantic semiconductor product specification silicon npn power transistors MJ21194 d escription with to-3 package complement to type mj21193 excellent gain linearity applications designed for high power audio output,disk head positioners and linear applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25) symbol parameter conditions max unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 250 v v ebo emitter-base voltage open collector 5 v i c collector current 16 a i cm collector current-peak 30 a i b base current 5 a p d total power dissipation t c =25 250 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 0.7 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors MJ21194 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 250 v v ce (sat) -1 collector-emitter saturation voltage i c =8a; i b =0.8a 1.4 v v ce (sat) -2 collector-emitter saturation voltage i c =16a; i b =3.2a 4.0 v v be(on) base-emitter on voltage i c =8a ; v ce =5v 2.2 v i cex collector cut-off current v ce =250v; v be( off ) =1.5v 100 a i ceo collector cut-off current v ce =200v; i b =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =8a ; v ce =5v 25 75 h fe-2 dc current gain i c =16a ; v ce =5v 8 f t transition frequency i c =1a ; v ce =10v,f=1mhz 4 mhz c ob collector output capacitance f=1mhz;v cb =10v,i e =0 500 pf i s/b second breakdown current with base forward biased v ce =50v;t=1s(non-repetitive) v ce =80v;t=1s(non-repetitive) 5.0 2.5 a
savantic semiconductor product specification 3 silicon npn power transistors MJ21194 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm)
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