comset semiconductors 1/3 npn 2N5671 ? 2n5672 the 2N5671 and 2n5672 are silicon multiepitaxial planer npn transistors in jedec to-3. they are especially intended for high curren t, fast switching industrial applications. absolute maximum ratings symbol ratings value unit 2N5671 90 v ceo collector-emitter voltage 2n5672 120 v 2N5671 120 v cbo collector-base voltage 2n5672 150 v 2N5671 v ebo emitter-base voltage 2n5672 7.0 v 2N5671 120 v cex collector-emitter voltage v eb = -1.5v, r eb = 50 ? 2n5672 150 v 2N5671 110 v cer collector-emitter voltage r eb <= 50 ? 2n5672 140 v 2N5671 i c collector current 2n5672 30 a 2N5671 i b base current 2n5672 10 a 2N5671 p d total device dissipation @ t c = 25 2n5672 140 watts 2N5671 t j junction temperature 2n5672 200 c 2N5671 t stg storage temperature 2n5672 -65 to +200 c thermal characteristics symbol ratings value unit 2N5671 r thjc thermal resistance, junction to case 2n5672 1.25 c/w h h i i g g h h c c u u r r r r e e n n t t f f a a s s t t s s w w i i t t c c h h i i n n g g a a p p p p l l i i c c a a t t i i o o n n s s
comset semiconductors 2/3 npn 2N5671 ? 2n5672 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit 2N5671 90 - - v ceo(sus) collector-emitter sustaining voltage (1) i c =200 ma, i b =0 2n5672 120 - - v 2N5671 110 - - v cer(sus) r be =50 ? collector-emitter sustaining voltage (1) i c =0.2 a , r be =50 ? 2n5672 140 - - v 2N5671 120 - - v cex(sus) collector-emitter sustaining voltage (1) i c =0.2 a , v be =-1.5v , r be =50 ? 2n5672 150 - - v 2N5671 i ceo collector cutoff current v ce =80 v 2n5672 --10ma v ce =110 v, v eb =-1.5 v, 2N5671 --12 v ce =135 v, v eb =-1.5 v, 2n5672 10 2N5671 --15 i cex collector cutoff current v ce =100 v, v eb =-1.5 v, t c =150c 2n5672 --10 ma 2N5671 i ebo emitter cutoff current v be =7.0 v, i c =0 2n5672 --10ma 2N5671 i c =15 a, v ce =2.0 v 2n5672 20 - 100 2N5671 h fe dc current gain (1) i c =20 a, v ce =5.0 v 2n5672 20 - - - 2N5671 v ce(sat) collector-emitter saturation voltage (1) i c =15 a, i b =1.2 a 2n5672 - - 0.75 2N5671 v be(sat) base-emitter saturation voltage (1) i c =15 a, i b =1.2 a 2n5672 --1.5 v symbol ratings test condition(s) min typ mx unit 2N5671 v be base-emitter voltage (1) i c =15 a, v ce =5.0 v 2n5672 --1.6v 2N5671 f t transition frequency v ce =10 v, i c =2 a, 2n5672 50 - - mhz v ce =24 v 2N5671 5.8 - - i s/b second breakdown energy (2) v ce =45 v 2n5672 0.9 - - a 2N5671 e s/b second breakdown energy v be =-4 v, r be =20 ? , l=180h 2n5672 20 - - mj 2N5671 t on turn-on time 2n5672 --0.5 2N5671 t s storage time 2n5672 --1.5 2N5671 t f file time i c =15 a , v cc =30 v i b1 = -i b2 =1.2 a 2n5672 --0.5 s 2N5671 c bo collector-base capacitance i e = 0 , v cb = 10 v , f = 1mhz 2n5672 - - 900 pf (1) pulse width 300 s, duty cycle =1.5% (2) pulsed : 1 s, non repetitive pulse
comset semiconductors 3/3 npn 2N5671 ? 2n5672 mechanical data case to-3 dimensions mm inches a 25,51 1,004 b 38,93 1,53 c 30,12 1,18 d 17,25 0,68 e 10,89 0,43 g 11,62 0,46 h 8,54 0,34 l 1,55 0,6 m 19,47 0,77 n 1 0,04 p 4,06 0,16 pin 1 : base pin 2 : emitter case : collector information furnished is believed to be accurate and reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice.
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