? by semikron b 5 C 23 semitrans ? m power mosfet modules skm 181 features n channel, enhancement mode short internal connections avoid oscillations switching kws in less than 1 m s isolated copper baseplate all electrical connections on top for easy busbaring large clearances and creepage distances ul recognized, file no. e 63 532 typical applications switched mode power supplies dc servo and robot drives dc choppers resonant and welding inverters ac motor drives laser power supplies ups equipment plasma cutting not suitable for linear amplification this is an electrostatic dischar- ge sensitive device (esds). please observe the international standard iec 747-1, chapter ix. absolute maximum ratings symbol conditions 1) values units v ds 800 v v dgr r gs = 20 k w 800 v i d 36 a i dm 144 a v gs 20 v p d 700 w t j , t stg C 55 . . .+150 c v isol ac, 1 min 2 500 v humidity din 40 040 class f climate din iec 68 t.1 55/150/56 inverse diode i f = C i d 36 a i fm = C i dm 144 a characteristics symbol conditions 1) min. typ. max. units v (br)dss v gs = 0, i d = 0,25 ma 800 C C v v gs(th) v gs = v ds , i d = 1 ma 2,1 3,0 4,0 v i dss v gs = 0, t j = 25 c C 50 250 m a v ds = 800 v t j = 125 c C 300 1000 m a i gss v gs = 20 v, v ds = 0 C 10 100 na r ds(on) v gs = 10 v, i d = 23 a C 180 240 m w g fs v ds = 25 v, i d = 23 a 15 25 C s c chc C C 160 pf c iss v gs = 0 C 24 32 nf c oss v ds = 25 v C 1,3 2 nf c rss f = 1 mhz C 0,5 0,8 nf l ds C C 20 nh t d(on) v dd = 400 v C 60 C ns t r i d = 23 a C 30 C ns t d(off) v gs = 10 v C 270 C ns t f r gs = 3,3 w C70C ns inverse diode v sd i f = 72 a, v gs = 0 C 1,1 1,4 v t rr t j = 25 c 2) C 1200 C ns t j = 150 c 2) CCC ns q rr t j = 25 c 2) C42C m c t j = 150 c 2) C50C m c thermal characteristics r thjc C C 0,18 c/w r thch m 1 , surface 10 m m C C 0,05 c/w ? y ? t ? y ? t y t mechanical data m 1 to heatsink, si units 4 C 5 nm to heatsink, us units 35 C 44 lb.in. m 2 for terminals, si units 2,5 C 3,5 nm for terminals, us units 22 C 24 lb.in. a C C 5x9,81 m/s 2 w C C 150 g case ? page b 5 C 2 d 15 1) t case = 25 c, unless otherwise specified . 2) i f = C i d , v r = 100 v, C di f /dt = 100 a/ m s semitrans m1
? by semikron b 5 C 24
? by semikron b 5 C 25
? by semikron b 5 C 26 0896
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