toshiba tc5117400bsj/bst-60/70 toshiba america electronic components, inc . 1 4,194,304 word x 4 bit dynamic ram description the tc5117400bsj/bst is the new generation dynamic ram organized 4,194,304 word by 4 bits. the tc5117400bsj/bst uti- lizes toshiba s cmos silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. multiplexed address inputs permit the tc5117400bsj/bst to be packaged in a 26/24 pin plastic soj (300mil), and 26/24 pin plastic tsop (300mil). the package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. system oriented features include single power supply of 5v 10% tolerance, direct interfacing capability with high performance logic families such as schottky ttl. features 4,194,304 word by 4 bit organization fast access time and cycle time single power supply of 5v 10% with a built-in v bb generator low power - 605mw max. operating - (tc5117400bsj/bst-60) - 523mw max. operating - (tc5117400bsj/bst-70) - 5.5mw max. standby outputs unlatched at cycle end allows two- dimensional chip selection common i/o capability using ?arly write? operation read-modify-write, cas before ras refresh, ras -only refresh, hidden refresh, fast page mode and test mode capability all inputs and outputs ttl compatible 2048 refresh cycles/32ms package tc5117400bsj: soj26-p-300c tc5117400bst: tsop26-p-300d key parameters item tc5117400bsj/bst -60 -70 t rac ra s access time 60ns 70ns t aa column address access time 30ns 35ns t cac cas access time 15ns 20ns t rc cycle time 110ns 130ns t pc fast page mode cycle time 40ns 45ns preliminary 1. this technical data may be controlled under u.s. export administration regulations and may be subject to the approval of the u.s. department of commerce prior to export. any export or re-export, directly or indi- rectly, in contravention of the u.s. export administration regulations is strictly prohibited. 2. life support policy toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate of?er of toshiba america, inc. life support sys- tems are either systems intended for surgical implant in the body or systems which sustain life. a critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness. 3. the information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. all information in this data book is subject to change without prior notice. furthermore, toshiba cannot assume responsibility for the use of any license under the patent rights of toshiba or any third parties.
tc5117400bsj/bst-60/70 standard dram dr16040794 2 toshiba america electronic components, inc . preliminary pin name pin connection (top view) a0 ~ a10 address inputs ras row address strobe cas column address strobe we write enable oe output enable i/o1~i/o4 data input/output v cc power (+5v) v ss ground
dr16040794 standard dram tc5117400bsj/bst-60/70 toshiba america electronic components, inc . 3 preliminary block diagram absolute maximum ratings item symbol rating unit note input voltage v in -0.5~v cc +0.5 v 1 output voltage v out -0.5~v cc +0.5 v 1 power supply voltage v cc -0.5~7.0 v 1 operating temperature t opr 0~70 c 1 storage temperature t stg -55~150 c1 soldering temperature (10s) t solder 260 c 1 power dissipation p d 900 mw 1 short circuit output current i out 50 ma 1
tc5117400bsj/bst-60/70 standard dram dr16040794 4 toshiba america electronic components, inc . preliminary recommended dc operating conditions (ta = 0 ~ 70 c) *v cc + 2.0v at pulse width 20ns (pulse width is measured at v cc ). **-2.0v at pulse width 20ns (pulse width is measured at v ss ). dc electrical characteristics (v cc = 5v 10%, ta = 0 ~ 70 c) symbol parameter min. typ. max. unit note v cc power supply voltage 4.5 5.0 5.5 v 2 v ih input high voltage 2.4 - v cc + 0.5* v 2 v il input low voltage -0.5** - 0.8 v 2 symbol parameter min max unit note | cc1 operating current average power supply operating current (ras , cas , address cycling: t rc =t rc min) tc5117400bsj/bst-60 - 110 ma 3,4 5 tc5117400bsj/bst-70 - 95 | cc2 standby current power supply standby current (ras =cas =v ih ) ?ma | cc3 ras only refresh current average power supply current, ras only mode (ras cycling, cas =v ih : t rc =t rc min.) tc5117400bsj/bst-60 - 110 ma 3, 5 tc5117400bsj/bst-70 - 95 | cc4 fast page mode current average power supply current, fast page mode (ras =v il , cas , address cycling: t pc =t pc min.) tc5117400bsj/bst-60 - 70 ma 3,4 5 tc5117400bsj/bst-70 - 60 | cc5 standby current power supply standby current (ras =cas =v cc -0.2v) ?ma | cc6 cas before ras refresh current average power supply current, cas before ras mode (ras , cas , cycling: t rc =t rc min.) tc5117400bsj/bst-60 - 110 ma 3, 5 tc5117400bsj/bst70 - 95 | i (l) input leakage current input leakage current, any input (0v |