triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 1 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. -25 -20 -15 -10 -5 0 5 10 15 20 25 25 26 27 28 29 30 31 32 33 34 35 frequency (ghz) s-parameter (db) product description the triquint TGA4902-SM is a ka- band packaged medium power amplifier. the TGA4902-SM operates from 25-35 ghz and is designed using triquints proven standard 0.25 um power phemt production process. the TGA4902-SM typically provides 25 dbm of output power at 1 db gain compression, with small signal gain of 18 db. the TGA4902-SM is ideally suited for vsat ground terminal market, point-to- point radio, point-to-multipoint communications. evaluation boards are available. lead-free and rohs compliant. primary applications ? ka-band vsat ? point-to-point radio ? point-to-multipoint communications ka-band packaged mpa TGA4902-SM preliminary measured data bias conditions: vd = 6 v, id = 220 ma, tuned orl gain irl key features ? typical frequency range: 25 - 35 ghz ? 25 dbm nominal p1db ? 18 db nominal gain ? bias 6 v, 220 ma ? package dimensions: 4.0 x 4.0 x 0.9 mm 15 17 19 21 23 25 27 25 26 27 28 29 30 31 32 33 34 35 frequency (ghz) p1db (dbm)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 2 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. TGA4902-SM table i maximum ratings 1/ symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -5 to 0 v id drain current 296 ma 2/ 3 / ? ig ? gate current 8.8 ma 3/ p in input continuous wave power 20 dbm p d power dissipation see note 4/ 2/ t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 260 0 c t stg storage temperature -65 to 150 0 c t case package operating temperature -40 to 110 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 0 c C t base 0 c) / 60.71 ( 0 c/w) where t base is the base plate temperature. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 3 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. table ii electrical characteristics (ta = 25 0 c, nominal) parameter typical units frequency range 25 - 35 ghz drain operating 6 v quiescent current 220 ma small signal gain 18 db input return loss 15 db output return loss 10 db output power @ 1 db compression gain 25 dbm temperature coefficient -0.017 db/ 0 c table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel case) vd = 6 v i d = 220 ma pdiss = 1.32 w 150 60.71 1.0e+6 note: worst case condition with no rf applied, 100% of dc power is dissipated, case temperature @ 70 o c TGA4902-SM
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 4 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 15 16 17 18 19 20 21 22 23 24 25 26 27 25 26 27 28 29 30 31 32 33 34 35 fre q uenc y ( ghz ) p1db (dbm) preliminary measured data bias conditions: vd = 6 v, id =220 ma, tuned 0 2 4 6 8 10 12 14 16 18 20 22 24 26 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) gain (db) TGA4902-SM
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 5 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. preliminary measured data bias conditions: vd = 6 v, id =220 ma -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 20 22 24 26 28 30 32 34 36 38 4 0 frequency (ghz) input return loss (db) tuned * -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) output return loss (db) tuned * * as build performance without tuning stubs TGA4902-SM
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 6 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. package pinout diagram pin description 1, 5, 6, 10, 11, 15, 16, 20, 21 gnd 2, 4, 7, 12, 14, 19 nc 3rf input 8vg1 9vg2 13 rf output 17 vd1 18 vd2 bottom view top view dot indicates pin 1 TGA4902-SM 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 tga 4902 date code lot code
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 7 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. mechanical drawing (bottom side) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4902-SM 20x 0.25 19x 0.40 16x 0.65 (pitch) 3.20 3.20 4x r0.13 4.000.25 4.000.25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 ground pad units: millimeters. tolerance is 0.076mm unless otherwise specified 2.200.125 2.200.125
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 8 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. recommended board layout assembly 100pf tuning 100pf 10 ohm 1 uf vg ~ -0.6v to get 220ma id tuning vd = 5-6v 1 uf 10 ohm TGA4902-SM
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information november 15, 2005 9 note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. ordering information part package style TGA4902-SM qfn 4x4 surface mount TGA4902-SM recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 C 120 sec @ 140 C 160 c 60 C 180 sec @ 150 C 200 c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 c260 c time within 5 c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 c/sec 4 C 6 c/sec
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