3 watt cellular t/r and antenna changeover switch, dc - 3.0 ghz sw-425 m/a-com division of amp incorporated north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 3 watt cellular t/r and antenna changeover switch, dc - 3.0 ghz sw-425 features ? low cost plastic sot-26 package ? low insertion loss <0.6db @ 1900 mhz ? low power consumption <20a @ +3v ? very high intercept point: 53 dbm ip 3 ? both positive and negative 2.5 to 8 v control ? for cdma, w-cdma, tdma, gsm, pcs and dcs applications description m/a-com?s sw-425 is a gaas monolithic switch in a low cost sot-26 surface mount plastic package. the sw-425 is ideally suited for applications where very low power consumption (<10a@5v), low intermodulation products and very small size are required. typical applications include internal/external antenna select switch for portable telephones and data radios. in addition, because of its low loss, good isolation and inherent speed, the sw-425 can be used as a conventional t/r switch or as an antenna diversity switch. the sw-425 can be used in power applications up to 3 watts in systems such as celluar pcs, cdma, w-cdma, tdma, gsm and other analog/digital wireless communications systems. the sw-425 is fabricated using a new 0.5 micron gate length gaas phemt process. the process features full chip passivation for increased performance and reliability. sot-26 plastic package electrical specifications t a = 25c ordering information part number package sw-425 pin sot-26 plastic package sw-425tr forward tape and reel 1 sw-425rtr reverse tape and reel 1 p in 1 xx#y 1. reference application note m513 for reel size information. parameter test conditions units min. typ. max. insertion loss dc - 1 ghz db 0.4 0.5 insertion loss 1- 2 ghz db 0.55 0.65 insertion loss 2 - 3 ghz db 0.7 0.8 isolation dc - 1 ghz db 18 20 isolation 1 - 2 ghz db 13 15 isolation 2 - 3 ghz db 10 12 vswr dc - 3 ghz 1.2:1 1.4:1 p 1db (3v supply) 500 mhz - 3 ghz dbm 32 34 p 1db (5v supply) 500 mhz - 3 ghz dbm 34 36 input ip 2 2-tone, 5 mhz spacing, 0.9 ghz +10 dbm (+13 dbm total) v ctl =3v dbm 62 70 input ip 3 2-tone, 5 mhz spacing, 0.9 ghz +10 dbm (+13 dbm total) v ctl =3v dbm 48 53 harmonics 2 nd 3 rd pin 30 dbm |v ctl | = 3v dbc 65 45 70 48 harmonics 2 nd 3 rd pin 33 dbm |v ctl | = 5v dbc 65 65 75 75 t rise , t fall t on , t off t ransients 10% to 90% rf, 90% to 10% rf 50% control to 90% rf, control to 10% rf in-band ns ns mv 60 20 20 gate leakage current v ctl = 3 v a 10 20
3 watt cellular t/r and antenna changeover switch, dc - 3.0 ghz sw-425 m/a-com division of amp incorporated north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 functional diagram absolute maximum ratings 1 parameter absolute maximum max. input power (0.5 - 3.0 ghz) 3 v control 5 v control +36 dbm +38 dbm operating temperature -40c to +85c storage temperature -65c to +150c 1. exceeding any one or combination of these limits may cause permanent damage. rf1 gnd rf2 v a rfc vb pin 1 truth table mode (control) control a control b rfc - rf1 rfc - rf2 positive 1 00.2v +2.5 to +8v +2.5 to +8v 00.2v off on on off postitive/ negative 1,2 -vc0.2v +vc +vc -vc0.2v off on on off negative 3 00.2v -2.5v to -8v -2.5v to -8v 00.2v on off off on 1. external dc blocking capacitors are required on all rf ports. 39pf capacitors used for positive control voltage. 2. |-v ctl |, v ctl 8 v 3. if negative control is used, dc blocking capacitors are not required on rf ports. pin configuration pin no. function description 1 rf1 rf in/out 2 gnd rf ground 3 rf2 rf in/out 4 vb v control b 5 rfc rf common 6 va v control a handling procedures the following precautions should be observed to avoid damage: static sensitivity gallium arsenide integrated circuits are esd sensitive and can be damaged by static electricity. proper esd techniques should be used when handling these devices.
3 watt cellular t/r and antenna changeover switch, dc - 3.0 ghz sw-425 m/a-com division of amp incorporated north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 1 1.1 1.2 1.3 1.4 1.5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) vswr 85 c 25 c -40 c 10 15 20 25 30 35 40 45 50 00.511.522.53 frequency (ghz) isolation (db) 85 c, -40 c, 25 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 00.511.522.53 frequency (ghz) insertion loss (db) 85 c -40 c 25 c 50 55 60 65 70 75 80 85 90 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 v ctl (v) harmonics (dbc) pin=28dbm pin=33dbm pin=31dbm pin=30dbm pin=29dbm pin=34dbm 30 35 40 45 50 55 60 65 70 75 80 85 90 2.533.544.555.566.577.58 v ctl (v) harmonics (dbc) pin=28dbm pin=33dbm pin=31dbm pin=30dbm pin=29dbm pin=34dbm 20 22 24 26 28 30 32 34 36 38 40 2.533.544.555.566.577.58 v ctl (v) compression (dbm) p0.1db p1db * *above vctl=4v, p1db is not measurable due to thermal runaway conditions input compression point vs. v ctl at 900 mhz 3 rd harmonic vs. v ctl at f o = 900 mhz typical performance curves 2nd harmonic vs. v ctl at f o = 900 mhz insertion loss vs. frequency and temperature isolation vs. frequency and temperature vswr vs. frequency and temperature
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