vishay general semiconductor bys11-90 document number 86014 14-jun-07 www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? very low switching losses ? high surge capability ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes the cathode end do-214ac (sma) major ratings and characteristics i f(av) 1.5 a v rrm 90 v i fsm 40 a v f 0.75 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit device marking code bys 109 maximum repetitive peak reverse voltage v rrm 90 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load at 8.3 ms at 10 ms i fsm 40 30 a voltage rate of change (rated v r ) dv/dt 10000 v/s junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 86014 14-jun-07 vishay general semiconductor bys11-90 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol bys11-90 unit maximum instantaneous forward voltage (1) at 1.0 a v f 750 mv maximum dc reverse current (1) at v rrm t j = 25 c t j = 100 c i r 100 1 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit maximum thermal resistance - junction lead r jl 25 c/w maximum thermal resistance - junction ambient r ja 150 (1) 125 (2) 100 (3) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode bys11-90-e3/tr 0.064 tr 1800 7" diameter plastic tape & reel bys11-90-e3/tr3 0.064 tr3 7500 13" diameter plastic tape & reel bys11-90he3/tr (1) 0.064 tr 1800 7" diameter plastic tape & reel bys11-90he3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape & reel figure 1. forward current vs. forward voltage 10000 1000 0.100 0.010 0.001 t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 forward voltage (v) forward current (a) figure 2. max. average forward current vs. ambient temperature 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 v r = v rrm , half sine-wave, r thja = 25 k/w ambient temperature (c) average forward current ( a)
document number 86014 14-jun-07 www.vishay.com 3 bys11-90 vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. max. average forward currentvs. ambient temperature figure 4. reverse current vs. junction temperature v r = 0 v, half sine-wave r thja = 25 k/w 100 k/w 125 k/w 150 k/w 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 ambient temperature (c) average forward current ( a) v r = v rrm 0 40 80 120 160 200 1000 100 10 1 0.1 junction temperature (c) reverse current (ma) figure 5. max reverse power dissi pation vs. junction temperature figure 6. diode capacitance vs. reverse voltage r thja = 25 k/w 100 k/w v r = v rrm 0 40 80 120 100 200 2.0 1.6 1.2 0.8 0.4 0 max. reverse power dissipation (w) junction temperature (c) f = 1 mhz 0.1 1.0 10 100 reverse voltage (v) 180 160 140 120 100 80 60 40 20 0 diode capacitance (pf) 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1.88 max.) 0.208 (5.28) ref 0.066 min. (1.68 min.) 0.060 min. (1.52 min.) mounting pad layout
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