? 1998 mos field effect transistor pa1758 switching n-channel power mos fet industrial use data sheet document no. d12911ej2v0ds00 (2nd edition) date published may 2001 ns cp(k) printed in japan package drawing (unit : mm) 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 ?0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 ?0.05 5.37 max. 0.10 14 85 1 2 7, 8 3 4 5, 6 ; source 1 ; gate 1 ; drain 1 ; source 2 ; gate 2 ; drain 2 equivalent circuit source body diode gate protection diode gate drain description this product is dual n-c hannel mos field effect tr ansistor designed for power m anagem ent application of notebook computers, and li-ion battery applicat ion. features ? dual mos fet chips in small package ? 2.5 v gate drive type low on-state resistance r ds(on)1 = 30 m ? (max.) (v gs = 4.5 v, i d = 3.0 a) r ds(on)2 = 40 m ? (max.) (v gs = 2.5 v, i d = 3.0 a) ? low c iss : c iss = 1100 pf (typ.) ? built-in g-s protection diode ? small and surface mount package (power sop8) ordering information part number package pa1758g power sop8 absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0) v dss 30 v gate to source voltage (v ds = 0) v gss 12.0 v drain current (dc) i d(dc) 6.0 a drain current (pulse) note1 i d(pulse) 24 a total power dissipation (1 unit) note2 p t 1.7 w total power dissipation (2 unit) note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ?55 to + 150 c notes 1. pw 10 s, duty cycle 1 % 2. mounted on ceramic subs trate of 2000 mm 2 x 1.1 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an addit ional protection circ uit is externally required if a voltage exceeding the rated voltage may be applied to this device. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. the mark shows major revised points.
data sheet d12911ej2v0ds 2 pa1758 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on)1 v gs = 4.5 v, i d = 3.5 a 20 30 m ? r ds(on)2 v gs = 2.5 v, i d = 3.5 a 25 40 m ? gate to source cutoff voltage v gs(off) v ds = 10 v, i d = 1.0 ma 0.5 0.8 1.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 3.5 a 5.0 13 s drain leakage current i dss v ds = 30 v, v gs = 0 10 a gate to source leakage current i gss v gs = 12.0 v, v ds = 0 10 a input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz 1100 pf output capacitance c oss 370 pf reverse transfer capacitance c rss 170 pf turn-on delay time t d(on) i d = 3.0 a, v gs(on) = 4.0 v, v dd = 15 v 50 ns rise time t r r g = 10 ? 190 ns turn-off delay time t d(off) 550 ns fall time t f 490 ns total gate charge q g i d = 6.0 a, v dd = 24 v, v gs = 4.0 v 15.0 nc gate to source charge q gs 2.0 nc gate to drain charge q gd 6.5 nc body diode forward voltage v f(s-d) i f = 6.0 a, v gs = 0 0.8 v test circuit 2 gate charge test circuit 1 switching time d.u.t. r l v dd r g r g = 10 ? pg. duty cycle 1 % v gs (on) 90 % 0 10 % 90 % i d 0 10 % i d v gs 90 % 10 % t d (on) t on t off t r t d (off) t f v gs wave form i d wave form d.u.t. 50 ? pg. v dd i g = 2 ma r l 0 v gs t s t = 1
data sheet d12911ej2v0ds 3 pa1758 typical characteristics (t a = 25 c) transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w 10 0.001 0.01 0.1 1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 mounted on ceramic substrate of 2000mm 2 1.1mm single pulse, 1 unit 10 100 forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s v ds =10v pulsed 1 1 10 100 10 100 0.1 t a =75?c t a =125?c t a =150?c t a = ? 50?c t a = ? 25?c t a =25?c drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 6 25 10 14 pulsed 75 50 8 4 2 12 i d =3 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 10 1 40 10 100 pulsed 0 70 v gs =4.5v v gs =2.5v 30 20 50 60 gate to source cutoff voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds =10 v i d =1 ma ? 50 0 150 50 0 0.4 1.0 1.4 100 0.2 0.6 0.8 1.2 1.6
data sheet d12911ej2v0ds 4 pa1758 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 0 ? 50 10 0 50 100 150 i d = 3.0 a 20 40 30 v gs =4.5v v gs =2.5v source to drain diode forward voltage v sd - source to drain voltage - v i f - diode forward current - a 0.1 0 1 10 100 0.5 1.0 1.5 pulsed v gs =2.5v v gs =0v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 10000 1 10 100 v gs = 0 f = 1 mhz c iss c oss c rss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 10 100 1 000 1 10 100 v ds =15v v gs =4v r g =10 ? t d(off) t d(on) t r t f reverse recovery diode vs. drain current i d - drain current - a t rr - reverse recovery diode - ns 1 0.1 10 1 10 100 1 000 100 di/dt =100a/ v gs = 0 s v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 4 8 12 16 10 20 30 40 2 4 6 8 0 i d =6.0 a v gs = 4 v v dd =24 v v dd =15 v v dd =6 v v gs
data sheet d12911ej2v0ds 5 pa1758 derating factor of forward bias safe operating area t a - ambient temperature - ? c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. ambient temperature t a - ambient temperature - ? c p t - total power dissipation - w/package 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 mounted on ceramic substrate of 2000mm 1.1mm 2 2 unit 1 unit drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0.4 0.6 0.8 10 0.2 pulsed v gs =4.5 v 20 25 15 5 v gs =2.5 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 0.1 1 10 100 pulsed 0 1 2 4 3 t a =150 ? c t a =125 ? c t a =75 ? c t a =25 ? c t a = ? 25 ? c t a = ? 50 ? c t a = 25 ? c single pulse mounted on ceramic substrate of 2000mm 2 1.1mm, 1 unit p w = 1 ms p w = 10 ms p w = 100 ms i d(pulse) = 24 a i d(dc) = 6 a power dissipation limited r ds(on) limited (v gs = 4.5 v ) forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 0.1 1 10 100 1 10 30 100
data sheet d12911ej2v0ds 6 pa1758 [memo]
data sheet d12911ej2v0ds 7 pa1758 [memo]
pa1758 m8e 00. 4 the information in this document is current as of may, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
|
