f-8 01/99 NJ26 process silicon junction field-effect transistor low-noise, high gain amplifier absolute maximum ratings at ta = 25?c gate current, ig 10 ma operating junction temperature, tj +150c storage temperature, ts C 65c to +175c devices in this databook based on the NJ26a process. datasheet 2n4416, 2n4416a 2n5484, 2n5485 2n5486 j304, j305 vcr11n at 25c free air temperature: NJ26 process static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 30 C 40 v i g = C 1 a, v ds = ? v reverse gate leakage current i gss C 10 C 100 pa v gs = C 20 v, v ds = ?v drain saturation current (pulsed) i dss 222mav ds = 15 v, v gs = ? v gate source cutoff voltage v gs(off) C 1 C 5 v v ds = 15 v, i d = 1 na dynamic electrical characteristics forward transconductance g fs 6msv ds = 15 v, v gs = ? v f = 1 khz input capacitance c iss 4.3 5.0 pf v ds = 15 v, v gs = ? v f = 1 mhz feedback capacitance c rss 1 1.5 pf v ds = 15 v, v gs = ? v f = 1 mhz equivalent noise voltage e n 4 nv/ hz v ds = 10 v, i d = 5 ma f = 1 khz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com g g s-d s-d die size = 0.016" x 0.016" all bond pads = 0.004" sq. substrate is also gate. databook.fxp 1/13/99 2:09 pm page f-8
01/99 f-9 NJ26 process silicon junction field-effect transistor gate source voltage in volts input capacitance in pf input capacitance as a function of v gs gate source voltage in volts feedback capacitance in pf feedback capacitance as a function of v gs gate source cutoff voltage in volts 0 1 2 3 4 5 6 drain saturation current in ma drain saturation current as a function of v gs(off) 25 20 15 10 5 0 1 2 3 4 5 6 10 8 6 4 2 drain source (on) resistance in drain saturation current in ma i dss as a function of r ds drain to source voltage in volts 0 5 10 15 20 drain current in ma drain current as a function of v ds 10 8 6 4 2 gate source cutoff voltage in volts transconductance in ms g fs as a function of v gs(off) v gs = ?.0 v v gs = ?.5 v v gs = ?.0 v v gs = 0.5 v v gs = v 0 4 8 12 ?16 2.5 2.0 1.5 1.0 0.5 v ds = v v ds = 5 v 0 4 8 12 ?16 5 4 3 2 1 v ds = v v ds = 15 v 100 150 200 250 300 20 16 12 8 4 v gs(off) = e2.1 v databook.fxp 1/13/99 2:09 pm page f-9
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