vishay siliconix SIA923EDJ document number: 66803 s10-1535-rev. a, 19-jul-10 www.vishay.com 1 dual p-channel 20 v (d-s) mosfet s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 ordering information: SIA923EDJ-t1-ge3 (lead (p b )-free and halogen-free) marking code x x x d k x lot tracea b ility and date code part # code p-channel mosfet s 2 d 2 g 2 p-channel mosfet s 1 d 1 g 1 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manuf acturing. a solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.5 a a t c = 70 c - 4.5 a t a = 25 c - 4.5 a, b, c t a = 70 c - 4.5 a, b, c pulsed drain current i dm - 15 continuous source-drain diode current t c = 25 c i s - 4.5 a t a = 25 c - 1.6 b, c maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 features ? halo g en-free accordin g to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? typical esd protection: 2500 v ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? charger switches and load switches for portable devices ? dc/dc converters product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) - 20 0.054 at v gs = - 4.5 v - 4.5 a 9.5 nc 0.070 at v gs = - 2.5 v - 4.5 a 0.104 at v gs = - 1.8 v - 4.5 a 0.165 at v gs = - 1.5 v - 1.5
www.vishay.com 2 document number: 66803 s10-1535-rev. a, 19-jul-10 vishay siliconix SIA923EDJ notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 15 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.5 - 1.4 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 0.3 3 a v ds = 0 v, v gs = 8 v 3 30 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.8 a 0.044 0.054 ? v gs = - 2.5 v, i d = - 3.3 a 0.057 0.070 v gs = - 1.8 v, i d = - 1 a 0.075 0.104 v gs = - 1.5 v, i d = - 0.5 a 0.097 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3.8 a 11 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 4.9 a 16.3 25 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 4.9 a 9.5 14.5 gate-source charge q gs 1.4 gate-drain charge q gd 2.3 gate resistance r g f = 1 mhz 1 5.1 10 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.6 ? i d ? - 3.9 a, v gen = - 4.5 v, r g = 1 ? 15 25 ns rise time t r 16 25 turn-off delay time t d(off) 30 45 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.6 ? i d ? - 3.9 a, v gen = - 8 v, r g = 1 ? 715 rise time t r 12 20 turn-off delay time t d(off) 26 40 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.5 a pulse diode forward current i sm - 15 body diode voltage v sd i s = - 3.9 a, v gs = 0 v - 0.9 - 1.2 v body diode reverse recovery time t rr i f = - 3.9 a, di/dt = 100 a/s, t j = 25 c 13 25 ns body diode reverse recovery charge q rr 5.5 12 nc reverse recovery fall time t a 7.5 ns reverse recovery rise time t b 5.5
document number: 66803 s10-1535-rev. a, 19-jul-10 www.vishay.com 3 vishay siliconix SIA923EDJ typical characteristics 25 c, unless otherwise noted gate current vs. gate-to-source volta g e output characteristics on-resistance vs. drain current and gate volta g e v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent (ma) 0 10 20 30 40 50 03691215 t j = 25 c 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5vthru2.5v v gs =2v v gs =1.5v v gs =1v v ds - drain-to-source voltage (v) i d - drain current (a) 0 0.04 0.08 0.12 0.16 0.20 03691215 v gs =1.5v v gs =2.5v v gs =1.8v v gs =4.5v r ds(on) - on-resistance ( ) i d - drain current (a) gate current vs. gate-to-source volta g e transfer characteristics capacitance 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 03691215 v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent (a) t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 t c = - 55 c t c = 125 c t c = 25 c v gs - gate-to-source voltage (v) i d - drain current (a) c rss 0 300 600 900 1200 1500 048121620 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf)
www.vishay.com 4 document number: 66803 s10-1535-rev. a, 19-jul-10 vishay siliconix SIA923EDJ typical characteristics 25 c, unless otherwise noted gate char g e source-drain diode forward volta g e threshold volta g e 0 2 4 6 8 0369121518 i d =4.9a v ds =10v v ds =5v v ds =16v q g - total gate charge (nc) v gs - gate-to-source voltage (v) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) 0.25 0.35 0.45 0.55 0.65 0.75 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v gs(th) (v) t j - temperature (c) on-resistance s. junction temperature on-resistance s. gate-to-source volta g e sin g le pulse power, junction-to-ambient 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =1.8v;i d =1a v gs =1.5v;i d =0.5a v gs =2.5v;4.5v;i d =3.8a t j - junction temperature (c) (normalized) r ds(on) - on-resistance 0.00 0.03 0.06 0.09 0.12 0.15 0.18 012345 i d =1a;t j = 25 c i d = 3.8 a; t j = 125 c i d =1a;t j = 125 c i d = 3.8 a; t j = 25 c r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0
document number: 66803 s10-1535-rev. a, 19-jul-10 www.vishay.com 5 vishay siliconix SIA923EDJ typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operatin g area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 1s,10s limited by r ds(on) * bvdss limited 1ms 100 s 10 ms dc 100 ms v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied i d - drain current (a) current deratin g * 0 2 4 6 8 10 12 0 255075100125150 package limited t c - case temperature (c) i d - drain current (a) power deratin g 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 66803 s10-1535-rev. a, 19-jul-10 vishay siliconix SIA923EDJ typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66803 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 110 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
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