smbyt01 ? october 1999 - ed: 2a fast recovery rectifier diodes very low reverse recovery time very low switching losses low noise turn-off switching surface mount device description features single high voltage rectifier suited for switch mode power supplies and other power converters. smb (plastic) symbol parameter value unit i f(rms) rms forward current 10 a i f(av) average forward current tl=110 c d = 0.5 1a i fsm non repetitive surge peak forward current tp=10ms sinusoidal 30 a t stg tj storage and junction temperature range - 40 to + 150 - 40 to + 150 c c absolute maximum ratings symbol parameter value unit v rrm repetitive peak reverse voltage 400 v symbol parameter value unit r th (j-l) junction-leads 25 c/w thermal resistance 1/5
symbol test conditions min. typ. max. unit v f * tj = 25 ci f = 1 a 1.5 v t j = 100 c 1.05 1.4 i r ** t j = 25 cv r = v rrm 10 m a t j = 100 c 0.1 0.3 ma pulse test : * tp = 380 m s, d < 2 % ** tp = 5 ms, d < 2 % static electrical characteristics symbol test conditions min. typ. max. unit trr t j = 25 ci f = 0.5a i r = 1a irr = 0.25a 25 ns i f = 1a v r = 30v di f /dt = -15a/ m s 60 recovery characteristics symbol test conditions min. typ. max. unit t irm v cc = 200v i f = 1a lp 0.05 m h t j = 100 c di f /dt = -50a/ m s 35 50 ns i rm 1.5 2 a to evaluate the conduction losses use the following equation : p = 1.1 x i f(av) + 0.25 x i f 2 (rms) turn-off switching characteristics (without serie inductance) voltage (v) 400 marking b4 laser marking logo indicates cathode smbyt01 2/5
0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 im t =0.5 t(s) i m(a) tc=25 c o tc=110 c o tc=75 c o fig. 3: non repetitive surge peak forward current versus overload duration. 0.001 0.01 0.1 1 10 0.01 0.1 1 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp k fig. 4: relative variation of thermal impedance junction to lead versus pulse duration. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 35 1.0 p=0.5w t i m =tp/t tp i m(a) p=1.5w p=2.5w fig. 2: peak current versus form factor. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig. 1: low frequency power losses versus average current. 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t =tp/t tp =0.5 f(av)(a) i o tamb( c) 1cm cu 2 rth(j-a)=75 c/w o rth(j-a)=rth(j-l) fig. 6: average current versus ambient temperature. (duty cycle : 0.5) 0.01 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 i fm(a) v fm(v) tl=100 c o 20 fig. 5: voltage drop versus forward current. (maximum values) smbyt01 3/5
fig. 10: recovery charge versus dif/dt. (typical values) fig. 9: peak reverse current versus dif/dt. fig. 7: recovery time versus di f /dt. fig. 8: peak forward voltage versus di f /dt. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 rth(j-a) 2 scu(cm ) printed circuit : epoxy (e=35um) fig. 12: thermal resistance junction to ambient versus copper surface under each lead. fig. 11: dynamic parameters versus junction temperature. smbyt01 4/5
package mechanical data smb (plastic) e c l e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063 laser marking weight = 0.12 g. logo indicates cathode 1.52 2.75 2.3 1.52 footprint dimensions (in millimeters) smb (plastic) information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com smbyt01 5/5
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