elektronische bauelemente 2SB764L pnp plastic encapsulated transistor 01-april-2009 rev. a page 1 of 3 3 base 1 emitte r collector 2 rohs compliant product a suffix of ?-c? specifies halogen & lead-free feature power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm : -1 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 packaging information weight: 0.3900 g (approximate) electrical characteristics (at t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -60 - - v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -50 - - v i c = -1ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c = 0 collector cut-off current i cbo - - -1 a v cb = -50v, i e = 0 emitter cut-off current i ebo - - -1 a v eb = -5v, i c = 0 h fe(1) 60 - 320 v ce = -2v, i c = -0.05a dc current gain h fe(2) 30 - - v ce = -2v, i c = -1a collector-emitter saturation voltage v ce(sat) - - -0.7 v i c = -0.5a, i b = -0.05a base-emitter voltage v be - - -1.2 v i c = -0.5a, i b = -0.05a transition frequency f t - 150 - mhz v ce = -10v, i c = -0.05a collector output capacitance c ob - 20 - pf v cb = -10v, i e = 0, f = 1 mhz classification of h fe(1) rank d e f range 60 - 120 100 - 200 160 - 320 1 emitte r 2 collector 3 base a c e f d b g h j k millimete r ref. min. max. a 4.70 5.10 b 7.80 8.20 c 13.80 14.20 d 3.70 4.10 e 0.35 0.55 f 0.35 0.45 g 1.27 typ. h 1.28 1.58 j 2.44 2.64 k 0.60 0.80 to-92l
elektronische bauelemente 2SB764L pnp plastic encapsulated transistor 01-april-2009 rev. a page 2 of 3 characteristic curves 2SB764L
elektronische bauelemente 2SB764L pnp plastic encapsulated transistor 01-april-2009 rev. a page 3 of 3 characteristic curves 2SB764L
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