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? freescale semiconductor, inc., 2006?2010. all rights reserved. freescale semiconductor data sheet: advance information this document contains information on a new product. specificatio ns and information herein are su bject to change without notice . document number: mc13850 rev. 1, 12/2010 mc13850 package information plastic package: mlpd-8 2.0 x 2.0 x 0.6 mm case: 2128-01 ordering information device device marking package MC13850EP 850 mlpd-8 1 introduction the mc13850 is a cost-effectiv e, high ip3 lna with low noise figure. this is the lead less package version of the mbc13720 device. as with th e mbc13720, this device is designed for general purpo se rf applications, yet has excellent high frequency gain and noise figure. an integrated bypass switch is included to preserve high input intercept performance. the input and output match are external to allow maximum design flexibility. the lna has two selectable ip3 m odes, a bypass mode and a standby mode. the mc13850 is fabricated with an advanced rf bicmos proc ess using the sige:c module and is packaged in the mlpd-8 leadless package. 1.1 features ? rf input frequency: 400 mhz to 2500 mhz ? gain: 21 db at 470 mhz, 14.5 db at 1960 mhz and 12 db at 2.4 ghz in high ip3 mode ? input third order intercept point (iip3): 10 dbm at 1960 mhz, 13 dbm at 2.4 ghz, and -2.5 dbm at 860 mhz in high ip3 mode mc13850 low noise amplifier with bypass switch contents: 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 electrical specifications . . . . . . . . . . . . . . . . . . .3 3 scattering and noise parameters . . . . . . . . . . . .8 4 application information . . . . . . . . . . . . . . . . . . .34 5 printed circuit board and bill of materials . . .46 6 packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 7 product documentation . . . . . . . . . . . . . . . . . . .53 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .53
introduction mc13850 advance information, rev. 1 2 freescale semiconductor ? noise figure (nf): 1.6 db at 860 mhz, 1.4 db at 1960 mhz, and 1.55 db at 2400 mhz in low ip3 mode ? output 1 db compression point (p1db): 9 db m at 470 mhz and 11.5 dbm at 1060 mhz in high ip3 mode ? selectable ip3 mode allows for running at the desired ip3 performa nce for a receiver's linearity requirements ? bypass mode has return losses comparable to ac tive mode, for use in systems with filters and duplexers ? bypass mode improves dynamic range in variable signal strength environments ? integrated logic-controlled sta ndby mode with current drain < 1a ? total supply current: 5 ma at 2.7 v in low ip3 mode and 10 ma in high ip3 mode. bypass mode <10 a ? in a receiver system with 20% active mode and 80% bypass mode, the average current drain is 1ma ? on-chip bias sets the bias point ? bias stabilized for device and temperature variations ? mlpd-8 leadless package with low parasitics ? 470-860, 900, 1960, and 2400 mhz application circuit ev aluation boards with characterization data are available ? available in tape and reel packaging figure 1 shows a simplified block diagram of the mc 13850 with the pinouts and location of the pin 1 designator on the package. figure 1. simplified block diagram gain enable vc c 2 5 7 6 enable2 logic r f in 3 1 8 4 . gn d nc enable1 gnd rf out pin 1 designator on package
electrical specifications mc13850 advance information, rev. 1 freescale semiconductor 3 1.2 applications ideal for use in any rf product that operates be tween 400 mhz and 2.5 ghz, and may be applied in: ? buffer amplifiers ?mixers ? if amplifiers ? voltage controlled oscillators (vcos) ? use with transceivers requiring external lnas ?ism ? mobile?cellular front end lna, gps, two-way radios ? consumer?wlan, 802.11 b/g ? auto?rke, tpms, gps, active antenna, wireless security 2 electrical specifications this section contains electrical char acteristics of the device as well as maximum ratings and recommended operating conditions. table 1 lists the maximum ratings for the device. table 2 lists the recommended operati ng conditions of the device. table 3 lists the four modes of operation for the device that resu lt from changing the voltage applied to the enable 1 (en1) and enable 2 (en2) pins. table 1. maximum ratings 1 (ta=25 c, unless otherwise noted) 1 maximum ratings are those values beyond which damage to the device may occur. functional operation must be restricted to the li mits in the recommended operating conditions and electr ical characteristics tables. ratings symbol value unit supply voltage v cc 3.3 vdc storage temperature range t stg -65 to 150 c operating ambient temperature range t a -40 to 85 c rf input power p rf 10 dbm power dissipation p dis 100 mw thermal resistance, junction to case r thetajc 400 c/w table 2. recommended operating conditions characteristic symbol min typ max unit rf frequency f rf 400 ? 2500 mhz supply voltage v cc 2.3 ? 3.0 vdc logic voltage input high voltage input low voltage ? v cc 1.5 0 ? ? v cc 0.95 vdc
electrical specifications mc13850 advance information, rev. 1 4 freescale semiconductor table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application frequencies. further details on the application circuits are shown in section 4, ?application information ? and details on the boards are shown in section 5, ?printed circuit bo ard and bill of materials .? table 3. truth table en1 en2 state current consumption low low standby < 10 a low high bypass < 10 a high low high ip3 9.9 ma high high low ip3 4.7 ma table 4. electrical characteristics measured in frequency specific tuned circuits (vcc = 2.7v, ta = 25 c unless otherwise noted) characteristic symbol min typ max unit 470 mhz (refer to figure 14 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma bypass ? 2 10 ua rf gain g db low ip3 20.5 21.6 ? high ip3 23.4 24.4 ? bypass -7.4 -6.9 ? noise figure nf db low ip3 ? 1.32 1.6 high ip3 ? 1.33 1.6 bypass ? 9.5 10 input ip3 iip3 dbm low ip3 -12.5 -11.2 ? high ip3 -9.2 -8 ? bypass 26.7 27.7 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 6 7 ? high ip3 8.6 9.6 ?
electrical specifications mc13850 advance information, rev. 1 freescale semiconductor 5 gain s21 db low ip3 20.5 21.5 ? high ip3 23.1 24.1 ? bypass -7.7 -6.7 ? 860 mhz (refer to figure 14 ) rf gain g db low ip3 16.4 17.4 ? high ip3 18 19 ? bypass -6.7 -6.2 ? noise figure nf db low ip3 ? 1.22 1.5 high ip3 ? 1.32 1.6 bypass ? 5.2 5.7 input ip3 iip3 dbm low ip3 -5.3 -4 ? high ip3 -2.3 -1.1 ? bypass 23.7 24.7 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 7.4 8.4 ? high ip3 8.1 9.2 ? gain s21 db low ip3 17 18 ? high ip3 18.4 19.4 ? bypass -6.8 -5.8 ? 900 mhz (refer to figure 15 ) rf gain g db low ip3 20 21 ? high ip3 20.8 21.8 ? bypass -4.5 -3.7 ? table 4. electrical characteristics measured in frequency specific tuned circuits (continued) (vcc = 2.7v, ta = 25 c unless otherwise noted) characteristic symbol min typ max unit
electrical specifications mc13850 advance information, rev. 1 6 freescale semiconductor noise figure nf db low ip3 ? 1.38 1.6 high ip3 ? 1.53 1.75 bypass ? 3.85 4.6 input ip3 iip3 dbm low ip3 -6.5 -4.1 ? high ip3 1.75 3.5 ? bypass 27 27.6 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 10.9 11.9 ? high ip3 11.1 12.1 ? gain s21 db low ip3 20.1 21.1 ? high ip3 20.8 21.8 ? bypass -4.5 -3.5 ? 900 mhz high ip3 (refer to figure 16 ) rf gain g db low ip3 15.5 16.5 ? high ip3 16.1 17.1 ? bypass -5.2 -4.2 ? noise figure nf db low ip3 ? 1.43 1.65 high ip3 ? 1.55 1.75 bypass ? 4.6 5.8 input ip3 iip3 dbm low ip3 -6 -2.9 ? high ip3 6 8 ? bypass 26.2 27.7 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 8 12 ? high ip3 11.5 13.5 ? table 4. electrical characteristics measured in frequency specific tuned circuits (continued) (vcc = 2.7v, ta = 25 c unless otherwise noted) characteristic symbol min typ max unit
electrical specifications mc13850 advance information, rev. 1 freescale semiconductor 7 gain s21 db low ip3 15.7 16.7 ? high ip3 16.2 17.2 ? bypass -4.7 -3.9 ? 1960 mhz (refer to figure 17 ) rf gain g db low ip3 13.8 14.8 ? high ip3 13.9 14.9 ? bypass -4.8 -3.5 ? noise figure nf db low ip3 ? 1.5 1.8 high ip3 ? 1.75 2 bypass ? 3.2 4.4 input ip3 iip3 dbm low ip3 3.5 6.5 ? high ip3 8 9.6 ? bypass 22.6 23.6 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 1.5 3.2 ? high ip3 2.3 4 ? gain s21 db low ip3 14 15 ? high ip3 14 15 ? bypass -4.8 -3.6 ? 2400 mhz (refer to figure 18 ) rf gain g db low ip3 11.5 12.5 ? high ip3 12 13 ? bypass -4 -3 ? table 4. electrical characteristics measured in frequency specific tuned circuits (continued) (vcc = 2.7v, ta = 25 c unless otherwise noted) characteristic symbol min typ max unit
scattering and noise parameters mc13850 advance information, rev. 1 8 freescale semiconductor 3 scattering and noise parameters table 5 through table 14 list the s parameters for the packaged part in a 50 system for each of the four modes of operation and over temperature. noise figure nf db low ip3 ? 1.6 1.95 high ip3 ? 1.85 2.2 bypass ? 3.2 4.3 input ip3 iip3 dbm low ip3 7 10 ? high ip3 11 12.5 ? bypass 26 27.2 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 -1 1 ? high ip3 0 2.2 ? gain s21 db low ip3 11.6 12.6 ? high ip3 12 13 ? bypass -3.7 -3.2 ? table 5. low ip3 mode 25 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.767 -16.4 12.078 163.6 0.02 68.8 0.854 1.1 350 0.754 -18.8 11.759 160.1 0.024 69 0.848 -2.6 400 0.742 -21.3 11.482 156.9 0.027 69.6 0.84 -5.6 450 0.727 -23.5 11.209 154.1 0.03 69.7 0.833 -8.5 500 0.693 -25.9 10.786 150.2 0.032 68.8 0.824 -8.9 550 0.675 -27.8 10.489 147.3 0.035 69.1 0.81 -11.1 600 0.664 -30.2 10.187 144.6 0.038 68.7 0.802 -13.1 650 0.647 -32.5 9.98 142.1 0.04 68.3 0.79 -15.3 700 0.628 -35 9.815 139.9 0.043 68.1 0.776 -17.2 table 4. electrical characteristics measured in frequency specific tuned circuits (continued) (vcc = 2.7v, ta = 25 c unless otherwise noted) characteristic symbol min typ max unit
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 9 750 0.61 -37.2 9.608 137.5 0.045 67.9 0.761 -19.2 800 0.592 -39.5 9.262 135.4 0.048 67.5 0.748 -20.9 850 0.585 -41.6 9.045 133.3 0.051 66.3 0.736 -23 900 0.552 -43.8 8.789 131.1 0.052 66.3 0.724 -24.4 950 0.536 -46.1 8.582 129 0.054 66.1 0.707 -26 1000 0.513 -48.1 8.347 126.8 0.057 65.5 0.694 -27.8 1050 0.494 -50.1 8.137 124.9 0.058 65.2 0.682 -29.5 1100 0.474 -51.8 7.9 122.8 0.06 64.9 0.67 -31.4 1150 0.456 -53.7 7.667 121.1 0.062 64.5 0.658 -33.2 1200 0.44 -55.9 7.464 119 0.064 64.1 0.644 -34.8 1250 0.423 -57.8 7.246 117.3 0.065 63.8 0.631 -36.3 1300 0.406 -59.5 7.069 115.6 0.067 63.2 0.617 -38.6 1350 0.386 -61.6 6.866 113.8 0.068 63 0.602 -40.3 1400 0.373 -63 6.621 112.5 0.069 62.7 0.592 -41.9 1450 0.36 -64.3 6.446 111.2 0.069 63.1 0.58 -42.9 1500 0.358 -65.9 6.283 109.6 0.071 64.6 0.575 -44.2 1550 0.354 -68.8 6.185 108.9 0.074 64.7 0.575 -47.4 1600 0.347 -71.4 5.967 106.7 0.076 63.7 0.564 -49.4 1650 0.336 -74.5 5.808 105.5 0.077 63.6 0.552 -51.4 1700 0.332 -76.5 5.647 104.1 0.078 63.4 0.539 -53.1 1750 0.324 -80 5.503 102.8 0.08 63.5 0.531 -54.6 1800 0.317 -83.4 5.38 101.4 0.082 63.6 0.529 -56.3 1850 0.301 -87.4 5.234 99.9 0.085 62.7 0.528 -58.5 1900 0.291 -88.6 5.093 98.5 0.085 61.3 0.52 -60.4 1950 0.287 -90.5 4.956 97 0.085 61.1 0.518 -62.4 2000 0.284 -92.4 4.818 95.3 0.086 61.2 0.517 -64.6 2050 0.281 -94.9 4.687 93.7 0.088 61.2 0.521 -67.1 2100 0.278 -97.4 4.512 92.1 0.09 60.1 0.518 -69.7 2150 0.274 -99.4 4.366 90.3 0.091 59.8 0.513 -72.7 2200 0.272 -103.2 4.193 89.1 0.094 58.6 0.515 -76.4 2250 0.26 -106 3.958 87.3 0.096 54.7 0.501 -79.6 table 5. low ip3 mode 25 c scattering parameters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 10 freescale semiconductor 2300 0.243 -106 3.781 86.9 0.091 51.6 0.472 -81.8 2350 0.235 -105.3 3.652 87.4 0.086 50.9 0.466 -82.3 2400 0.238 -101.6 3.473 86.3 0.081 51.9 0.472 -82.7 2450 0.253 -99.9 3.335 86 0.079 54.5 0.478 -86.3 2500 0.273 -101 3.158 86.8 0.077 56.8 0.455 -90.7 2550 0.294 -104.9 3.1 88.9 0.078 60 0.414 -91.5 2600 0.3 -110 3.146 89.2 0.082 61.3 0.391 -88.3 table 6. low ip3 mode 85 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.763 -17 12.148 163.4 0.02 67.8 0.851 0.9 350 0.75 -19.3 11.83 159.9 0.024 68.5 0.847 -2.9 400 0.737 -21.8 11.54 156.6 0.026 69.1 0.837 -5.9 450 0.723 -24.1 11.255 153.8 0.029 69.4 0.831 -8.8 500 0.691 -26.5 10.828 149.9 0.032 68.4 0.823 -9.1 550 0.674 -28.6 10.552 147.1 0.035 68.6 0.81 -11.5 600 0.662 -31.1 10.271 144.3 0.038 68 0.801 -13.5 650 0.643 -33.6 10.062 141.7 0.04 67.4 0.788 -15.8 700 0.625 -36 9.866 139.6 0.043 67.6 0.775 -17.5 750 0.604 -38.8 9.712 136.9 0.046 66.5 0.76 -20 800 0.581 -41.1 9.347 134.5 0.048 65.7 0.743 -21.8 850 0.569 -43.1 9.113 132.4 0.05 65 0.727 -23.7 900 0.535 -45.2 8.821 130.2 0.051 64.9 0.714 -24.9 950 0.519 -47.2 8.576 128.2 0.053 64.7 0.697 -26.4 1000 0.497 -48.9 8.33 126.1 0.055 64.5 0.683 -27.9 1050 0.48 -50.7 8.108 124.3 0.057 64.2 0.673 -29.7 1100 0.464 -52 7.873 122.4 0.058 64 0.66 -31.4 1150 0.449 -53.8 7.655 120.9 0.06 64.1 0.648 -32.9 table 5. low ip3 mode 25 c scattering parameters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 11 1200 0.436 -56.2 7.47 118.8 0.062 64.2 0.637 -34.3 1250 0.421 -58.3 7.268 117.1 0.064 63.9 0.627 -36 1300 0.404 -60 7.085 115.3 0.065 63.7 0.613 -38.2 1350 0.387 -62.5 6.899 113.5 0.067 63.7 0.601 -40.2 1400 0.376 -64.4 6.674 112.2 0.068 63.4 0.594 -41.8 1450 0.363 -67 6.507 110.6 0.069 63.6 0.583 -43.6 1500 0.354 -69.3 6.324 108.7 0.071 63.5 0.569 -45.4 1550 0.344 -71.8 6.18 107.9 0.073 63.5 0.563 -48.2 1600 0.335 -73.6 5.948 106 0.074 63.3 0.553 -49.6 1650 0.325 -76.5 5.79 104.8 0.076 62.8 0.542 -51.6 1700 0.322 -78.2 5.62 103.5 0.076 62.2 0.53 -53 1750 0.313 -81.3 5.477 102.4 0.077 62.7 0.522 -54.5 1800 0.304 -84.3 5.349 101.1 0.079 63.1 0.52 -56.2 1850 0.295 -87.2 5.22 99.7 0.08 63 0.521 -57.6 1900 0.286 -89.3 5.09 98.2 0.082 62.6 0.521 -59.6 1950 0.283 -91.5 4.956 96.8 0.083 62.3 0.521 -61.6 2000 0.281 -93.6 4.819 94.9 0.084 61.9 0.52 -64.4 2050 0.275 -95.7 4.674 93.4 0.085 61.9 0.525 -67 2100 0.276 -97.8 4.502 91.8 0.087 61.9 0.525 -69.5 2150 0.275 -99.8 4.357 90.1 0.089 61.9 0.521 -72.6 2200 0.271 -103.5 4.183 89 0.093 59.9 0.519 -76.7 2250 0.262 -104.8 3.972 87.5 0.093 56.3 0.504 -79 2300 0.252 -104.7 3.826 86.8 0.089 54.6 0.489 -80.9 2350 0.248 -105.4 3.686 86.8 0.087 54.2 0.487 -82.9 2400 0.248 -104.3 3.482 85.3 0.084 53.6 0.485 -84.8 2450 0.254 -102.5 3.322 85.4 0.08 54.5 0.482 -88.1 2500 0.272 -102.8 3.152 86.7 0.077 57.3 0.456 -92 2550 0.289 -106.1 3.111 88.9 0.078 60.8 0.414 -91.9 2600 0.295 -110.5 3.163 89 0.082 62.3 0.398 -88.5 table 6. low ip3 mode 85 c scattering parameters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 12 freescale semiconductor table 7. low ip3 mode -40 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.77 -15.7 11.982 163.5 0.02 69.3 0.858 1.4 350 0.759 -17.9 11.655 160.3 0.024 69.8 0.855 -2.3 400 0.747 -20.2 11.369 157.2 0.027 70.6 0.849 -5.2 450 0.733 -22.4 11.081 154.5 0.03 70.4 0.841 -8 500 0.701 -24.5 10.651 150.7 0.032 69.5 0.83 -8.4 550 0.684 -26.4 10.36 147.9 0.035 69.7 0.818 -10.7 600 0.674 -28.7 10.084 145.3 0.038 69.1 0.814 -12.6 650 0.658 -31 9.895 142.9 0.041 68.5 0.802 -14.9 700 0.64 -33.4 9.744 140.8 0.043 68.3 0.785 -16.9 750 0.621 -35.7 9.57 138.4 0.046 67.6 0.77 -19.3 800 0.602 -38 9.225 136.3 0.049 67.1 0.761 -21 850 0.596 -40 9.013 134.2 0.051 65.9 0.747 -23 900 0.56 -42.2 8.75 132 0.053 65.8 0.732 -24.5 950 0.543 -44.2 8.538 130 0.055 65.3 0.715 -26.3 1000 0.52 -46.1 8.314 127.8 0.057 64.8 0.703 -28 1050 0.5 -47.8 8.1 125.9 0 .059 64.3 0.692 -29.7 1100 0.48 -48.9 7.838 123.9 0.06 63.7 0.673 -31.4 1150 0.466 -50.5 7.621 122.5 0.062 63.5 0.662 -33.2 1200 0.455 -52.5 7.445 120.6 0.064 63.8 0.654 -34.2 1250 0.439 -54.7 7.27 118.9 0.066 63.3 0.647 -36.1 1300 0.423 -56.2 7.108 117 0.068 63.1 0.632 -38.5 1350 0.403 -58.7 6.922 115.2 0.069 62.5 0.616 -40.7 1400 0.392 -60.4 6.693 113.8 0.07 62.2 0.611 -42.5 1450 0.374 -62.5 6.523 112.2 0.071 62 0.598 -43.9 1500 0.367 -63.9 6.335 110.4 0.072 62.4 0.582 -45.2 1550 0.36 -66.3 6.227 109.8 0.074 62.7 0.579 -48.4 1600 0.352 -68.3 5.993 107.7 0.076 62 0.569 -50 1650 0.338 -71.2 5.841 106.5 0.077 61.7 0.558 -51.7 1700 0.336 -72.4 5.674 105.2 0.078 61.1 0.543 -53.1 1750 0.329 -75.7 5.539 104 0.079 61.3 0.531 -54.6 1800 0.319 -79.2 5.42 102.5 0.08 61.8 0.53 -56.1
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 13 1850 0.302 -82.5 5.272 101.2 0.082 62 0.536 -57.5 1900 0.293 -82.9 5.152 99.8 0.084 60.9 0.532 -59.6 1950 0.292 -85.2 5.028 98.3 0.085 60.5 0.529 -61.8 2000 0.288 -87.6 4.899 96.4 0.086 60.2 0.53 -64.6 2050 0.282 -90.1 4.763 94.7 0.087 59.7 0.534 -67.2 2100 0.278 -92.5 4.576 93 0.089 58.7 0.529 -69.7 2150 0.274 -93.5 4.434 91.3 0.089 58.7 0.519 -72.5 2200 0.275 -96.7 4.273 90.2 0.092 59 0.526 -76.1 2250 0.27 -101 4.047 88 0.097 56 0.517 -79.4 2300 0.242 -102.3 3.853 87.4 0.093 50.6 0.485 -82.2 2350 0.229 -100.3 3.704 88.5 0.086 49.1 0.47 -82.9 2400 0.235 -95.7 3.55 87.2 0.081 51 0.482 -82.4 2450 0.252 -94.7 3.43 86.4 0.079 53 0.499 -86.2 2500 0.271 -95.5 3.224 86.7 0.077 54.7 0.479 -91.1 2550 0.293 -99.2 3.108 89.1 0.077 57.8 0.43 -93.9 2600 0.302 -104.8 3.16 90.3 0.081 60.6 0.397 -91.4 table 8. high ip3 mode 25 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.637 -22.9 18.316 155.3 0.018 65.4 0.771 -3 350 0.61 -26.1 17.76 150.7 0.021 66.1 0.755 -7.1 400 0.584 -29.4 17.271 146.2 0.024 66.5 0.739 -10.3 450 0.554 -32.3 16.716 142.3 0.026 66.9 0.724 -13.4 500 0.511 -34.4 15.873 137.9 0.028 67 0.707 -13.1 550 0.491 -36.7 15.221 134.7 0.03 67.1 0.688 -15.4 600 0.469 -39.2 14.597 131.8 0.032 67.4 0.674 -17.3 650 0.445 -41.6 14.055 128.9 0.034 67.7 0.657 -19.2 700 0.423 -44.1 13.507 126.4 0.036 68 0.64 -20.7 table 7. low ip3 mode -40 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 14 freescale semiconductor 750 0.401 -46.2 13.005 124 0.038 68.6 0.624 -22.5 800 0.379 -48.6 12.435 121.7 0.04 68.3 0.611 -24.1 850 0.364 -50.7 11.975 119.5 0.042 67.9 0.596 -25.8 900 0.337 -52.5 11.48 117.4 0.044 68.2 0.583 -27 950 0.322 -54.6 11.051 115.5 0.046 68.5 0.569 -28.4 1000 0.3 -56.2 10.614 113. 5 0.048 68.3 0.556 -30 1050 0.284 -58.4 10.23 111.8 0.049 68.7 0.545 -31.3 1100 0.267 -59.5 9.823 110 0.051 68.4 0.533 -33.2 1150 0.252 -61.1 9.444 108.6 0.053 68.8 0.522 -34.8 1200 0.241 -63.3 9.116 107 0.054 68.9 0.511 -36.1 1250 0.228 -65.1 8.779 105.5 0.056 69 0.5 -37.2 1300 0.214 -66.5 8.481 104.1 0.057 69.1 0.487 -39.4 1350 0.201 -68.7 8.182 102.8 0.058 69.3 0.476 -41.1 1400 0.193 -70.5 7.877 101.7 0.06 69.7 0.469 -42.5 1450 0.187 -72.5 7.629 100.7 0.061 70.3 0.461 -43.2 1500 0.185 -75.2 7.399 99.5 0.063 71.5 0.457 -44.5 1550 0.185 -78.8 7.215 98.8 0.066 71.5 0.454 -47.6 1600 0.181 -82.9 7.001 97.4 0.068 71.1 0.447 -49.1 1650 0.177 -87.8 6.828 96.3 0.069 71.5 0.444 -50.5 1700 0.172 -91.9 6.647 94.7 0.072 71 0.442 -52 1750 0.163 -97.1 6.451 93.3 0.073 70.7 0.441 -54.5 1800 0.158 -101.5 6.253 91.8 0.075 70.4 0.444 -57.2 1850 0.149 -107.3 6.026 90.2 0.078 69.6 0.444 -60 1900 0.14 -108.1 5.81 89.2 0.078 68.5 0.436 -62.5 1950 0.14 -108.5 5.618 88.1 0.078 68.4 0.431 -64.9 2000 0.143 -109.4 5.437 86.9 0.079 68.5 0.431 -67.4 2050 0.146 -112.9 5.269 85.6 0.082 68.6 0.437 -69.8 2100 0.146 -115.7 5.068 84.2 0.083 67.6 0.435 -72.6 2150 0.146 -117.1 4.877 82.8 0.084 67.6 0.433 -75.8 2200 0.151 -121.7 4.675 81.5 0.088 66.5 0.438 -79.8 2250 0.145 -126.8 4.415 80.1 0.089 62.7 0.429 -83.7 table 8. high ip3 mode 25 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 15 2300 0.125 -126.1 4.168 79.9 0.085 59.2 0.405 -86.1 2350 0.118 -119.8 3.98 80.5 0.079 59.5 0.396 -87 2400 0.127 -109.2 3.789 80.7 0.074 61.6 0.399 -88.2 2450 0.153 -105.6 3.647 81.3 0.074 65.1 0.405 -91.5 2500 0.179 -108.8 3.501 82.8 0.075 68 0.381 -95.7 2550 0.201 -114.7 3.465 84.6 0.077 70.4 0.348 -96.5 2600 0.21 -121.6 3.517 85 0.082 71 0.326 -93.7 table 9. high ip3 mode 85 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.596 -25.6 19.666 153.2 0.018 64.2 0.759 -3.2 350 0.571 -28.7 18.791 148.5 0.021 65.3 0.746 -7.5 400 0.547 -32.1 17.972 144.2 0.023 66.1 0.728 -10.6 450 0.525 -34.9 17.164 140.5 0.025 66.6 0.713 -13.6 500 0.487 -37.1 16.152 136.5 0.027 66.4 0.699 -13.3 550 0.468 -39.9 15.476 133.3 0.029 66.8 0.68 -15.7 600 0.447 -42.5 14.804 130.4 0.031 67 0.665 -17.6 650 0.422 -45.2 14.209 127.4 0.033 67.3 0.648 -19.5 700 0.401 -47.9 13.626 124.9 0.035 67.7 0.631 -21 750 0.376 -50.4 13.093 122.3 0.037 67.9 0.615 -22.8 800 0.353 -52.7 12.499 119.9 0.039 68.1 0.6 -24.4 850 0.336 -55.3 12.05 117.7 0.041 68 0.586 -26 900 0.309 -57.6 11.518 115.5 0.043 67.8 0.574 -27.1 950 0.294 -59.6 11.037 113.6 0.044 67.8 0.556 -28.7 1000 0.274 -61.5 10.581 111.7 0.046 68 0.542 -30 1050 0.259 -64 10.173 110 0.047 68.1 0.531 -31.6 1100 0.242 -64.9 9.747 108.3 0.049 68.4 0.518 -33 1150 0.227 -66.4 9.357 107 0.05 69.1 0.506 -34.4 table 8. high ip3 mode 25 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 16 freescale semiconductor 1200 0.219 -68.9 9.032 105.5 0.052 69.3 0.496 -35.6 1250 0.211 -70.4 8.689 104.1 0.053 69.9 0.487 -36.7 1300 0.197 -72.7 8.384 102.7 0.055 70.1 0.475 -38.9 1350 0.186 -75 8.074 101.4 0.056 70.8 0.466 -40.3 1400 0.18 -77.9 7.786 100.3 0.058 71 0.46 -42.1 1450 0.175 -80.5 7.533 99.4 0.059 71.9 0.454 -43.1 1500 0.174 -84.7 7.301 98 0.062 72.2 0.444 -45 1550 0.17 -88.3 7.09 97.2 0.064 72.2 0.441 -47.6 1600 0.168 -91.3 6.865 96 0.066 72.3 0.439 -48.8 1650 0.171 -96.4 6.701 95 0.068 72 0.435 -50.8 1700 0.169 -100.8 6.514 93.5 0.07 71.6 0.433 -52.2 1750 0.16 -106.4 6.317 92 0.071 71.4 0.432 -54.8 1800 0.153 -111 6.098 90.6 0.073 71.3 0.433 -57.3 1850 0.149 -114.1 5.889 89.4 0.074 71 0.435 -59.6 1900 0.146 -116 5.698 88.2 0.076 70.5 0.436 -62.3 1950 0.147 -118.1 5.514 87 0.077 70.4 0.435 -64.9 2000 0.149 -120.3 5.318 85.5 0.078 70 0.436 -68.4 2050 0.148 -122.6 5.11 84.3 0.08 69.4 0.438 -71.4 2100 0.152 -123.2 4.904 83.3 0.08 69 0.431 -74 2150 0.157 -123.4 4.719 82.2 0.082 69.7 0.431 -76.9 2200 0.164 -128.7 4.526 81 0.087 68.6 0.436 -80.8 2250 0.154 -132.2 4.263 80 0.087 63.8 0.424 -85 2300 0.142 -128.4 4.036 80 0.082 61.8 0.406 -87.2 2350 0.144 -123.4 3.834 81.2 0.077 62.5 0.389 -90.3 2400 0.159 -120.9 3.742 82.7 0.074 66.1 0.369 -89.7 2450 0.17 -121.8 3.725 82.3 0.076 68.5 0.379 -89.5 2500 0.183 -122 3.582 82.3 0.077 69.4 0.372 -92.9 2550 0.199 -124.9 3.518 83.5 0.078 71.3 0.344 -93.5 2600 0.209 -129.3 3.543 83.4 0.082 72.4 0.333 -90.5 table 9. high ip3 mode 85 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 17 table 10. high ip3 mode -40 c scattering parameters (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.779 -15.2 11.546 164.4 0.02 68.6 0.839 0.3 350 0.766 -17.4 11.388 160.9 0.023 69.2 0.832 -3.7 400 0.749 -20 11.312 157.6 0.026 69.4 0.821 -6.7 450 0.73 -22.4 11.235 154.6 0.029 69.3 0.811 -9.8 500 0.691 -24.9 11.006 150.3 0.031 68.2 0.801 -10.2 550 0.675 -26.7 10.656 147.5 0.034 68.2 0.787 -12.8 600 0.667 -28.9 10.312 144.9 0.036 67.5 0.771 -15.2 650 0.647 -31.2 10.177 142.3 0.038 67.5 0.753 -17.3 700 0.624 -34 10.129 139.8 0.04 67.6 0.735 -19 750 0.599 -36.5 10.049 137.1 0.043 67.4 0.719 -20.8 800 0.574 -39.2 9.79 134.6 0.045 67.2 0.707 -22.4 850 0.56 -41.6 9.656 132.2 0.048 66.3 0.695 -24.3 900 0.518 -44 9.455 129.7 0.05 66 0.685 -25.7 950 0.5 -46.3 9.227 127.5 0.052 65.4 0.668 -27.4 1000 0.474 -48.3 9.01 125.1 0.053 65.2 0.653 -29.1 1050 0.455 -50.4 8.778 123.1 0.055 64.7 0.643 -31.1 1100 0.437 -51.8 8.5 121.3 0.057 64.5 0.63 -33 1150 0.416 -53.8 8.276 119.6 0.058 64.2 0.618 -34.8 1200 0.397 -56.1 8.092 117.2 0.06 63.6 0.6 -36.4 1250 0.38 -57.5 7.845 115.4 0.061 64 0.586 -37.6 1300 0.361 -59.1 7.65 113.6 0.062 64 0.572 -39.7 1350 0.339 -60.9 7.422 111.9 0.063 64.5 0.561 -40.9 1400 0.325 -62.6 7.182 110.4 0.064 64.3 0.553 -42.5 1450 0.312 -63.6 7.001 109.3 0.065 65.7 0.548 -43.4 1500 0.309 -66.2 6.852 107.5 0.068 65.8 0.541 -45.4 1550 0.3 -69.3 6.724 106.7 0.071 65.2 0.534 -48.6 1600 0.294 -71.5 6.485 105 0.072 64.9 0.523 -49.5 1650 0.284 -75.1 6.35 103.7 0.074 64.8 0.516 -51.2 1700 0.279 -77.6 6.203 102.1 0.075 64.3 0.512 -52.3 1750 0.265 -81.4 6.046 100.4 0.076 64 0.509 -54.5 1800 0.251 -84.3 5.863 98.8 0.077 63.9 0.508 -56.4
scattering and noise parameters mc13850 advance information, rev. 1 18 freescale semiconductor 1850 0.237 -86.9 5.676 97.3 0.079 63.9 0.509 -58.6 1900 0.228 -87.6 5.521 96 0.08 63.4 0.508 -60.9 1950 0.226 -89.9 5.371 94.6 0.081 63.3 0.508 -63.1 2000 0.223 -92.2 5.206 92.8 0.083 62.9 0.507 -66.2 2050 0.218 -94.5 5.028 91.4 0.085 62.4 0.509 -69.4 2100 0.215 -96.4 4.845 90 0.085 61 0.504 -71.7 2150 0.214 -97 4.69 88.3 0.085 61.1 0.503 -74.8 2200 0.216 -100.2 4.493 87.1 0.088 61.8 0.509 -79.1 2250 0.209 -103.1 4.224 85.7 0.091 58.2 0.486 -83.4 2300 0.199 -101.1 4.051 85.4 0.087 55.5 0.462 -85.4 2350 0.204 -100.3 3.875 86 0.083 55.2 0.455 -88.1 2400 0.213 -100.8 3.678 86.2 0.081 55.3 0.432 -89.6 2450 0.223 -101.6 3.658 86.9 0.078 57.9 0.424 -88.8 2500 0.23 -103.6 3.531 86 0.078 58.6 0.426 -91.3 2550 0.245 -105.9 3.388 87.2 0.077 60.8 0.398 -94 2600 0.259 -111.7 3.414 88.2 0.08 63.2 0.367 -91.8 table 11. bypass mode 25 c scattering parameters (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.881 -22.3 0.315 73.1 0.312 72.8 0.868 -8 350 0.858 -25.4 0.361 68.7 0.357 68.4 0.852 -13.1 400 0.833 -28.5 0.403 64.7 0.399 64.4 0.83 -17.3 450 0.808 -31.2 0.442 61.1 0.438 60.8 0.809 -21.3 500 0.766 -34.4 0.467 56.7 0.463 56.5 0.787 -22.7 550 0.742 -37.1 0.499 53.6 0.495 53.3 0.76 -25.9 600 0.715 -39.5 0.527 50.6 0.523 50.4 0.736 -28.6 650 0.689 -41.9 0.553 47.8 0.549 47.6 0.712 -31.3 700 0.662 -44.4 0.576 45 0.571 44.9 0.687 -33.6 table 10. high ip3 mode -40 c scattering parameters (continued) (vcc = 2.7v, enable 1 = high, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 19 750 0.637 -46.6 0.596 42.5 0.592 42.4 0.663 -36 800 0.613 -48.7 0.614 40.1 0.61 40 0.637 -38.1 850 0.588 -51 0.632 37.9 0.625 37.4 0.615 -40.2 900 0.565 -53 0.645 35.6 0.638 35.3 0.595 -42 950 0.546 -55.2 0.657 33.6 0.649 33.3 0.572 -43.5 1000 0.523 -56.9 0.665 31.5 0.658 31.2 0.551 -44.8 1050 0.505 -58.9 0.672 29.7 0.665 29.4 0.535 -45.9 1100 0.488 -60.7 0.677 28.1 0.67 27.9 0.524 -47.2 1150 0.467 -63.1 0.684 26.5 0.677 26.3 0.515 -48.7 1200 0.442 -65.6 0.687 24.8 0.68 24.5 0.507 -50.1 1250 0.406 -67.3 0.681 23.1 0.674 22.8 0.502 -51.5 1300 0.373 -62.5 0.669 23.2 0.662 23 0.498 -54.6 1350 0.407 -60.6 0.69 23.6 0.684 23.3 0.479 -57.6 1400 0.418 -64.3 0.707 21.9 0.701 21.7 0.462 -59 1450 0.415 -67.6 0.714 20.2 0.707 20 0.452 -59.8 1500 0.41 -70.3 0.718 18.7 0.711 18.5 0.442 -61.2 1550 0.405 -72.7 0.719 17.2 0.713 17 0.437 -62.7 1600 0.4 -74.9 0.719 15.8 0.713 15.6 0.434 -63.9 1650 0.396 -77.3 0.718 14.6 0.712 14.3 0.432 -65.2 1700 0.394 -79.4 0.716 13.2 0.71 13 0.43 -66.7 1750 0.391 -81.9 0.713 11.9 0.707 11.7 0.43 -68.6 1800 0.388 -84.7 0.708 10.6 0.702 10.4 0.433 -70.2 1850 0.383 -87.9 0.7 9.3 0.694 9.1 0.434 -71.8 1900 0.368 -91.6 0.685 8.2 0.68 8 0.439 -73.9 1950 0.332 -93 0.665 8.4 0.66 8.1 0.442 -77.2 2000 0.336 -85.8 0.676 9.2 0.67 9 0.432 -79.7 2050 0.369 -87.1 0.683 7.8 0.678 7.5 0.43 -80.4 2100 0.386 -91 0.679 6.1 0.673 6 0.433 -81.2 2150 0.389 -95.1 0.665 4.8 0.66 4.7 0.44 -83.2 2200 0.356 -98.5 0.645 5 0.64 4.9 0.444 -86.2 2250 0.365 -91.1 0.661 5.2 0.656 5.1 0.441 -86.8 table 11. bypass mode 25 c scattering parameters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 20 freescale semiconductor 2300 0.401 -93.1 0.659 3.3 0.653 3.1 0.448 -87.9 2350 0.417 -96.9 0.646 1.8 0.641 1.7 0.453 -90 2400 0.427 -100.5 0.63 0.8 0.625 0.6 0.46 -92.2 2450 0.43 -104.2 0.613 0.2 0.606 -0.1 0.462 -94.1 2500 0.426 -108.3 0.593 0.1 0.586 -0.3 0.456 -96.5 2550 0.406 -112.5 0.579 0.9 0.573 0.6 0.437 -96.9 2600 0.369 -114.9 0.571 0.9 0.565 0.6 0.438 -94.4 table 12. bypass mode 85 c scattering parameters (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.877 -22.8 0.318 72.9 0.308 72.3 0.867 -8.2 350 0.852 -25.7 0.364 68.5 0.353 68 0.852 -13.3 400 0.826 -28.9 0.406 64.4 0.395 63.9 0.83 -17.5 450 0.803 -31.6 0.444 60.8 0.433 60.3 0.808 -21.5 500 0.76 -34.7 0.469 56.5 0.458 56.1 0.787 -22.9 550 0.737 -37.3 0.5 53.4 0.489 53 0.759 -26.1 600 0.71 -39.6 0.529 50.4 0.517 50 0.735 -28.8 650 0.683 -42 0.554 47.6 0.542 47.2 0.711 -31.5 700 0.657 -44.4 0.576 45 0.564 44.6 0.687 -33.6 750 0.631 -46.4 0.596 42.4 0.584 42.1 0.662 -35.9 800 0.607 -48.4 0.613 40.1 0.602 39.8 0.638 -38 850 0.581 -50.8 0.633 38 0.613 37.2 0.619 -40 900 0.556 -52.9 0.645 35.9 0.626 35.2 0.601 -41.6 950 0.537 -54.9 0.657 33.9 0.638 33.3 0.58 -43.3 1000 0.513 -56.3 0.666 32 0.647 31.4 0.563 -44.9 1050 0.494 -57.5 0.674 30.4 0.655 29.7 0.55 -46.8 1100 0.481 -58.1 0.68 28.9 0.661 28.3 0.535 -48.5 1150 0.469 -59.4 0.687 27.6 0.668 27 0.521 -50.4 table 11. bypass mode 25 c scattering parameters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 21 1200 0.46 -61 0.696 26.3 0.677 25.7 0.509 -52.3 1250 0.451 -62.5 0.703 24.8 0.684 24.2 0.495 -53.7 1300 0.436 -64.1 0.707 23.3 0.689 22.8 0.483 -55.5 1350 0.426 -65.9 0.711 22 0.694 21.4 0.47 -57 1400 0.416 -67.7 0.715 20.7 0.697 20.1 0.463 -58.7 1450 0.408 -69.5 0.716 19.4 0.699 18.9 0.456 -59.8 1500 0.402 -71.3 0.719 18.2 0.702 17.7 0.446 -61.6 1550 0.398 -73 0.72 16.9 0.703 16.4 0.444 -63.4 1600 0.393 -74.5 0.72 15.8 0.703 15.3 0.442 -64.8 1650 0.391 -76.3 0.72 14.6 0.703 14.1 0.438 -66.5 1700 0.388 -77.5 0.718 13.4 0.701 12.9 0.436 -68.1 1750 0.383 -78.9 0.716 12.3 0.699 11.8 0.433 -70.2 1800 0.382 -80.8 0.712 11.1 0.696 10.6 0.436 -72.1 1850 0.383 -82.6 0.708 10.1 0.692 9.6 0.437 -73.6 1900 0.381 -84.3 0.702 9.1 0.687 8.6 0.439 -75.4 1950 0.382 -86.2 0.696 8.2 0.681 7.7 0.438 -77.4 2000 0.383 -87.7 0.689 7.3 0.674 6.8 0.441 -80.1 2050 0.383 -89.5 0.68 6.6 0.666 6.1 0.446 -81.8 2100 0.387 -91.3 0.674 6.1 0.659 5.6 0.444 -83.3 2150 0.385 -92.5 0.667 5.7 0.654 5.2 0.444 -85.3 2200 0.378 -92.8 0.664 5.3 0.65 4.8 0.445 -87.1 2250 0.392 -91.9 0.665 4.4 0.651 3.9 0.452 -88.3 2300 0.409 -92.6 0.658 3 0.645 2.6 0.46 -89.7 2350 0.42 -94.7 0.646 1.9 0.633 1.5 0.465 -91.7 2400 0.428 -97.2 0.63 1.2 0.617 0.7 0.471 -94.1 2450 0.428 -99.9 0.613 1.2 0.594 0.3 0.474 -97 2500 0.424 -101.9 0.599 2.3 0.581 1.4 0.461 -99.8 2550 0.416 -102.6 0.601 3.6 0.583 2.7 0.439 -99.8 2600 0.416 -101.7 0.615 3.6 0.596 2.7 0.431 -98.1 table 12. bypass mode 85 c scattering parameters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 22 freescale semiconductor table 13. bypass mode -40 c scattering parameters (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.878 -22.7 0.318 73.1 0.309 72.5 0.868 -8.1 350 0.854 -25.7 0.363 68.7 0.354 68.2 0.853 -13.2 400 0.828 -28.9 0.406 64.7 0.396 64.2 0.832 -17.4 450 0.805 -31.5 0.445 61.1 0.434 60.6 0.81 -21.4 500 0.762 -34.7 0.469 56.8 0.459 56.4 0.79 -22.8 550 0.739 -37.3 0.501 53.7 0.491 53.3 0.762 -26 600 0.714 -39.7 0.53 50.7 0.519 50.3 0.738 -28.8 650 0.686 -42.1 0.556 47.9 0.545 47.6 0.715 -31.5 700 0.661 -44.5 0.579 45.3 0.568 45 0.691 -33.8 750 0.635 -46.5 0.599 42.7 0.588 42.4 0.666 -36.1 800 0.612 -48.5 0.617 40.4 0.606 40.1 0.642 -38.3 850 0.586 -50.9 0.637 38.3 0.618 37.5 0.622 -40.4 900 0.563 -52.9 0.65 36.2 0.632 35.5 0.602 -42.1 950 0.545 -55 0.663 34.2 0.644 33.6 0.58 -43.9 1000 0.524 -56.6 0.673 32.3 0.654 31.7 0.561 -45.5 1050 0.507 -58.3 0.682 30.5 0.663 29.9 0.545 -47.3 1100 0.493 -59.7 0.689 29 0.67 28.4 0.529 -48.6 1150 0.475 -61.6 0.697 27.5 0.679 26.9 0.517 -50.1 1200 0.46 -63.4 0.705 25.9 0.687 25.3 0.508 -52 1250 0.447 -64.8 0.71 24.2 0.692 23.7 0.495 -53.5 1300 0.431 -66.5 0.713 22.7 0.696 22.2 0.483 -55.3 1350 0.416 -68.2 0.714 21.2 0.697 20.7 0.472 -56.7 1400 0.398 -69.8 0.713 19.8 0.697 19.2 0.466 -58.3 1450 0.381 -69.6 0.705 18.9 0.69 18.4 0.466 -59.7 1500 0.39 -69.3 0.713 18.7 0.697 18.2 0.454 -62.5 1550 0.397 -71.6 0.721 17.4 0.705 16.9 0.446 -64.4 1600 0.395 -73.9 0.723 16 0.707 15.5 0.441 -65.5 1650 0.393 -76.2 0.724 14.7 0.708 14.2 0.438 -67 1700 0.392 -77.8 0.721 13.4 0.706 12.8 0.436 -68.5 1750 0.386 -79.8 0.719 12.1 0.704 11.6 0.433 -70.5 1800 0.381 -82.2 0.713 10.9 0.698 10.4 0.437 -72.3
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 23 1850 0.372 -83.3 0.705 10.1 0.69 9.6 0.439 -74.1 1900 0.376 -83.8 0.703 9.3 0.688 8.9 0.438 -76 1950 0.381 -86.2 0.697 8.3 0.683 7.8 0.437 -78 2000 0.382 -88 0.691 7.4 0.677 7 0.439 -80.6 2050 0.38 -89.3 0.684 6.9 0.67 6.4 0.442 -82.2 2100 0.391 -90.5 0.681 6 0.667 5.6 0.441 -83.4 2150 0.396 -92.5 0.672 5.2 0.659 4.7 0.443 -85.4 2200 0.387 -94.9 0.662 4.8 0.65 4.4 0.444 -87.5 2250 0.384 -93.3 0.665 4.5 0.653 4 0.448 -88.6 2300 0.404 -92.7 0.661 2.9 0.648 2.4 0.456 -89.8 2350 0.419 -94.5 0.646 1.6 0.634 1.1 0.461 -91.7 2400 0.431 -97 0.629 1 0.617 0.5 0.468 -93.8 2450 0.433 -100 0.616 1.2 0.598 0.3 0.471 -96.4 2500 0.431 -102.4 0.602 1.9 0.584 1 0.462 -99.1 2550 0.423 -103.8 0.599 3.1 0.582 2.2 0.441 -99.7 2600 0.42 -103.4 0.612 3. 3 0.595 2.4 0.431 -98 table 14. standby mode 25 c scattering parameters (vcc = 2.7v, enable 1 = low, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.947 -2.1 0.021 77.2 0.021 77 0.923 8.9 350 0.945 -2.3 0.025 78.8 0.025 78.7 0.927 6.2 400 0.944 -2.6 0.028 80 0.028 80 0.927 4.3 450 0.943 -2.6 0.032 81.4 0.032 81.1 0.928 2.5 500 0.932 -4 0.035 80.5 0.035 80.4 0.939 2.4 550 0.933 -4.3 0.039 81.2 0.039 80.9 0.934 1 600 0.931 -4.8 0.043 81.6 0.042 81.4 0.933 -0.1 650 0.928 -5.1 0.046 82 0.046 81.8 0.933 -1.3 700 0.924 -5.7 0.05 82.3 0.05 82.2 0.932 -2.2 table 13. bypass mode -40 c scattering parameters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = high, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 24 freescale semiconductor 750 0.923 -6 0.054 82.3 0.054 82.1 0.929 -3.4 800 0.923 -6.4 0.058 82.4 0.058 82.3 0.924 -4.4 850 0.918 -7.1 0.062 82.6 0.061 82.3 0.922 -5.6 900 0.914 -7.5 0.066 82.5 0.066 82.1 0.923 -6.6 950 0.913 -8.2 0.07 82.3 0.07 82.1 0.918 -7.5 1000 0.908 -8.6 0.074 81.8 0.074 81.7 0.916 -8.6 1050 0.902 -9.1 0.078 81.9 0.078 81.6 0.914 -9.8 1100 0.9 -9.5 0.082 81.5 0.082 81.4 0.91 -11.1 1150 0.896 -10.1 0.086 81.1 0.086 80.9 0.907 -12.4 1200 0.891 -10.8 0.091 80.7 0.09 80.3 0.904 -13.5 1250 0.888 -11.6 0.095 80.2 0.094 80 0.901 -14.6 1300 0.885 -12.1 0.099 79.7 0.098 79.5 0.897 -16.1 1350 0.881 -12.7 0.103 79.1 0.103 78.9 0.893 -17.6 1400 0.875 -13.5 0.107 78.4 0.106 78.3 0.89 -19.1 1450 0.87 -14.2 0.11 77.8 0.109 77.6 0.887 -20.5 1500 0.868 -14.8 0.114 77.8 0.113 77.6 0.883 -22.1 1550 0.872 -15.7 0.118 77.6 0.118 77.4 0.879 -23.9 1600 0.869 -16.9 0.123 77 0.123 76.7 0.874 -25.6 1650 0.864 -18.2 0.128 76.2 0.127 75.9 0.867 -27.3 1700 0.859 -19.5 0.132 75.3 0.131 75.1 0.862 -29.1 1750 0.85 -20.8 0.136 74.2 0.136 74 0.856 -30.9 1800 0.84 -22.1 0.14 73.5 0.14 73.4 0.85 -32.9 1850 0.819 -22.8 0.146 72.3 0.145 72.1 0.843 -34.8 1900 0.826 -22.9 0.149 70.6 0.148 70.4 0.836 -36.9 1950 0.83 -24.4 0.151 69.5 0.15 69.3 0.826 -39 2000 0.827 -25.9 0.153 68.9 0.152 68.7 0.818 -40.9 2050 0.82 -27.4 0.157 68.6 0.156 68.5 0.812 -42.8 2100 0.817 -28.8 0.162 67.5 0.161 67.4 0.803 -45 2150 0.812 -30.4 0.165 66.6 0.164 66.5 0.792 -47.3 2200 0.799 -32.1 0.172 65.5 0.172 65.5 0.784 -49.4 2250 0.786 -32.9 0.18 62.3 0.179 62.2 0.779 -51.7 table 14. standby mode 25 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 25 table 15 and table 16 list the noise parameters for the packaged part as measured in a 50 system for low and high ip3 modes of operation and at several bias levels. 2300 0.79 -33.5 0.179 57.4 0.178 57.3 0.765 -54.5 2350 0.794 -35 0.17 54.6 0.17 54.5 0.744 -57.2 2400 0.797 -36.7 0.16 54.2 0.159 54.1 0.72 -59.8 2450 0.799 -38.6 0.157 56.5 0.155 56.2 0.686 -62.1 2500 0.797 -40.8 0.157 58.3 0.156 58.2 0.628 -63 2550 0.792 -43.1 0.162 60.1 0.161 59.8 0.588 -59.5 2600 0.784 -45.4 0.173 59.7 0.172 59.5 0.603 -55 table 15. low ip3 mode noise parameters (50 system) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle vcc = 2.7 v, icc = 4.7 ma 300 0.94 0.188 30 6.22 28.45 500 0.92 0.184 13.3 7.14 25.83 700 0.91 0.17 4.2 7.49 23.66 800 0.9 0.161 2.2 7.55 22.71 900 0.9 0.15 1.7 7.59 21.85 1000 0.91 0.139 2.7 7.65 21.07 1200 0.91 0.116 8.6 7.82 19.68 1500 0.96 0.087 25.8 7.8 17.9 1700 1 0.077 41.6 7.22 16.82 1900 1.05 0.078 59.9 6.59 15.72 2000 1.1 0.083 69.7 6.84 15.14 2100 1.12 0.093 79.8 7.9 14.53 2400 1.26 0.151 110.9 7.83 12.4 2500 1.31 0.181 121.2 6.02 11.57 2600 1.37 0.218 131.3 10.25 10.65 table 14. standby mode 25 c scattering parame ters (continued) (vcc = 2.7v, enable 1 = low, enable 2 = low, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13850 advance information, rev. 1 26 freescale semiconductor vcc = 3.0 v, icc = 4.7 ma 300 0.91 0.161 30.8 6.45 28.26 500 0.87 0.168 13.3 7.05 25.74 700 0.82 0.161 3.9 7.35 23.64 800 0.8 0.154 2 7.43 22.73 900 0.86 0.145 1.8 7.49 21.89 1000 0.92 0.135 3.1 7.52 21.12 1200 1.02 0.112 9.8 7.55 19.76 1500 1.15 0.083 28.3 7.53 18 1700 1.21 0.071 44.7 7.55 16.92 1900 1.26 0.072 63.4 7.61 15.82 2000 1.27 0.078 73.2 7.63 15.24 2100 1.28 0.088 83.1 7.63 14.63 2400 1.29 0.151 112.7 7.14 12.52 2500 1.28 0.185 122 6.73 11.69 2600 1.27 0.226 130.9 6.19 10.79 vcc = 3.3 v, icc = 4.7 ma 300 0.93 0.151 39.2 6.41 28.06 500 0.89 0.159 21.9 7.1 25.57 700 0.84 0.152 5.8 7.52 23.5 800 0.82 0.145 -0.6 7.62 22.61 900 0.89 0.136 -5.3 7.68 21.79 1000 0.96 0.125 -7.8 7.72 21.03 1200 1.07 0.103 -4.4 7.77 19.7 1500 1.21 0.073 28.8 7.75 17.95 1700 1.27 0.062 75.3 7.38 16.86 1900 1.32 0.064 145.6 6.67 15.72 2000 1.34 0.071 -169.1 6.56 15.12 2100 1.35 0.083 -116.4 7.21 14.47 2400 1.35 0.152 90.6 8.34 12.21 table 15. low ip3 mode noise parameters (continued) (50 system) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 27 2500 1.34 0.188 177.5 5.5 11.31 2600 1.33 0.231 -85.9 9.22 10.33 table 16. high ip3 mode noise parameters (50 system) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle vcc = 2.7 v, icc = 9.9 ma 300 1.15 0.087 24.3 5.89 29.63 500 1.12 0.049 16.9 6.03 26.99 700 1.1 0.026 88.7 6.29 24.78 800 1.1 0.02 148.4 5.96 23.8 900 1.1 0.017 -139.1 5.88 22.9 1000 1.1 0.017 -56.1 6.1 22.08 1200 1.11 0.025 131.8 6.99 20.59 1500 1.16 0.053 74 7.17 18.65 1700 1.21 0.079 -98.3 6.17 17.45 1900 1.26 0.109 56.7 6.79 16.24 2000 1.3 0.125 116.1 8.44 15.61 2100 1.34 0.14 160.3 10.38 14.95 2400 1.47 0.185 178.7 6.23 12.7 2500 1.52 0.199 139 6.51 11.84 2600 1.57 0.211 72.4 12 10.9 vcc = 3.0 v, icc = 9 ma 300 0.94 0.04 141.2 5.37 29.7 500 0.98 0.022 -101.1 5.81 27.04 700 1.03 0.014 45.5 6.14 24.81 800 1.05 0.014 127.8 6 23.84 900 1.07 0.016 -145 6.04 22.94 1000 1.1 0.02 -53.6 6.45 22.11 table 15. low ip3 mode noise parameters (continued) (50 system) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle
scattering and noise parameters mc13850 advance information, rev. 1 28 freescale semiconductor figure 2 through figure 9 are constant noise figure a nd gain circles with input and output stability regions shown on smith charts. gamm a opt, noise resistance and st ability at the frequency are shown for both low and high ip3 modes of operation. 1200 1.14 0.033 138.7 6.21 20.63 1500 1.2 0.063 79.3 7.09 18.7 1700 1.24 0.089 -81.1 7.43 17.49 1900 1.28 0.117 110.7 6.97 16.26 2000 1.3 0.132 -158.3 5.91 15.62 2100 1.32 0.147 -71.5 8.72 14.94 2400 1.38 0.192 155.6 5.75 12.62 2500 1.4 0.206 -142.3 6.12 11.72 2600 1.41 0.22 -88.3 9.29 10.74 vcc = 3.3 v, icc = 9 ma 300 0.92 0.035 161.1 5.54 29.42 500 0.98 0.023 93.7 6.06 26.9 700 1.04 0.02 84.5 6.27 24.77 800 1.07 0.021 99.4 6.3 23.83 900 1.1 0.024 125.8 6.27 22.97 1000 1.12 0.028 162.9 6.2 22.16 1200 1.18 0.042 -95.2 6.73 20.7 1500 1.24 0.072 112.6 6.79 18.77 1700 1.29 0.097 -83.9 7.66 17.54 1900 1.33 0.124 90.3 7.84 16.28 2000 1.34 0.138 178.9 5.86 15.62 2100 1.36 0.153 -92.7 8.13 14.92 2400 1.35 0.146 -136.8 6.45 15.27 2500 1.41 0.197 160.5 5.73 12.52 2600 1.44 0.225 -50.3 11.99 10.58 table 16. high ip3 mode noise parameters (continued) (50 system) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 29 figure 2. constant noise figure and gain circles, 500 mhz, low ip3 mode, 25 c figure 3. constant noise figure and gain circles, 500 mhz, high ip3 mode, 25 c
scattering and noise parameters mc13850 advance information, rev. 1 30 freescale semiconductor figure 4. constant noise figure and gain circles, 900 mhz, low ip3 mode, 25 c figure 5. constant noise figure and gain circles, 900 mhz, high ip3 mode, 25 c
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 31 figure 6. constant noise figure and gain circles, 1960 mhz, low ip3 mode, 25 c figure 7. constant noise figure and gain circles, 1960 mhz, high ip3 mode, 25 c
scattering and noise parameters mc13850 advance information, rev. 1 32 freescale semiconductor figure 8. constant noise figure and gain circles, 2400 mhz, low ip3 mode, 25 c figure 9. constant noise figure and gain circles, 2400 mhz, high ip3 mode, 25 c
scattering and noise parameters mc13850 advance information, rev. 1 freescale semiconductor 33 figure 10 and figure 11 show minimum noise figure and associated gain swept over frequency for packaged parts in a 50 system. figure 10. minimum noise figure and associated gain vs. frequency (low ip3 mode) figure 11. minimum noise figur e and associated gain vs. frequency (high ip3 mode) figure 12 and figure 13 show maximum stable/available gain and forward insertion gain swept over frequency for packaged parts in a 50 system. figure 12. maximum stable/available gain and forward insertion gain vs. frequency (low ip3 mode) 8 10 12 14 16 18 20 22 24 26 28 30 32 0.8 0.9 1 1.1 1.2 1.3 1.4 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency ? (ghz) fmin ? (db) associated ? gain ? (db) noise figure min (db) associated gain (db) 8 10 12 14 16 18 20 22 24 26 28 30 32 1 1.1 1.2 1.3 1.4 1.5 1.6 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency ? (ghz) fmin ? (db) associated ? gain ? (db) noise figure min (db) associated gain (db) 5 10 15 20 25 30 0.3 0.8 1.3 1.8 2.3 frequency ? (ghz) msg/mag ? (db) |s21|^2 ? (db) |s21 2 | msg mag msg, mag, [s21 2 ] (db)
application information mc13850 advance information, rev. 1 34 freescale semiconductor figure 13. maximum stable/available gain and forward insertion gain vs. frequency (high ip3 mode) 4 application information the mc13850 lna is designed for applications in th e 400 mhz to 2.5 ghz range. it has four different modes: low ip3, high ip3, bypass and standby. th e lna is programmable through the enable 1 and enable 2 pins. in low ip3 mode, cu rrent consumption is opt imized. current consumpt ion is higher in high ip3 mode to boost the intercept point performance. the gain difference between low ip3 and high ip3 modes is typically 1.0 db, and t ypically the low and hi gh ip3 modes have similar noise figures. the internal bypass switch is designed for broadband appl ications. one of the advantages of the mc13850 is the simplification of the matching network in both bypass and amplifier modes. the bypass switch is designed so that changes of input and output return losses between bypass mode and active mode are minimized. as a result, the mismatch of the lna input and output is minimized and the matching network design is simplified. in the design of the external matching network, conj ugate matching does not nec essarily provide the best noise figure and gain performance. designing for a ba lance between noise figure, gain, return losses and intercept point provides circuits that demonstrate ove rall performance. for a pa rticular application or specification requirement, the matc hing can be changed to achieve enhanced performance of one parameter. typical circuits are provided for 470 mhz?860 mhz, 900 mhz, 1.96 ghz and 2.4 ghz applications. figure 14 shows the typical application circuit for 470 mhz?860 mhz. the noise figure, input intercept point, gain and return losses are optimized. l1 and c2 act as a low frequency trap to improve the input intercept point. in figure 15 , the typical applicati on circuit for 900 mhz is shown. the input low frequenc y trap again is used to maximize the input in tercept point. it has moderate ip3 perfor mance for high gain. figure 16 shows the 900 mhz application circuit with feedback network for higher ip3. ca pacitive feedback is used to increase the third order input intercept point while decreasing gain and prov ides unconditional stability. the corresponding printed circ uit boards are shown in figure 19 through figure 23 . table 22 lists the bill of materials for the applicat ion circuit evaluation boards. 5 10 15 20 25 30 35 0.3 0.8 1.3 1.8 2.3 frequency ? (ghz) msg/mag ? (db) |s21|^2 ? (db) |s21 2 | msg mag msg, mag, [s21 2 ] (db)
application information mc13850 advance information, rev. 1 freescale semiconductor 35 4.1 470 mhz?860 mhz application this application was designed to provide nf < 1.4 db , s21 gain > 21 db, oip3 of 10 dbm with return losses better than -10 db at 470 mhz and nf < 1.3 db , s21 gain > 17 db, oip3 of 13 dbm at 860 mhz. this is a broadband application with application to uhf. the performa nce can be further optimized for narrowband applications such as rke at the lower frequency, or wirele ss security at the higher frequency. typical performance that can be expected from this circuit at 2.7v is listed in table 17 . figure 14 shows the 470 mhz?860 mhz schematic with package pinouts and circuit components. figure 14. 470 mhz?860 mhz application schematic table 17. typical 470 mhz?860 mhz evaluation board performance (vcc = 2.7v, t a = 25 c ) characteristic symbol min typ max unit 470 mhz (refer to figure 14 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma bypass ? 2 10 ua rf gain g db low ip3 20.5 21.6 ? high ip3 23.4 24.4 ? bypass -7.4 -6.9 ? rf out gain enable r1 0402 330 ohm l1 04 02 47 nh c1 04 02 27 pf c3 0402 5 pf l2 0402 18 nh c5 0402 .1 uf c4 0402 47 pf vc c c2 0402 .1 uf 2 5 7 6 en ab le 2 logic rf in 3 1 8 4 . gnd nc r2 0402 51 oh m en abl e 1 l3 0402 4.3 nh pin 1 locator on package
application information mc13850 advance information, rev. 1 36 freescale semiconductor noise figure nf db low ip3 ? 1.32 1.6 high ip3 ? 1.33 1.6 bypass ? 9.5 10 input ip3 iip3 dbm low ip3 -12.5 -11.2 ? high ip3 -9.2 -8 ? bypass 26.7 27.7 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 6 7 ? high ip3 8.6 9.6 ? input return loss s11 db low ip3 ? -5.2 -4.1 high ip3 ? -10.6 -8.5 bypass ? -4.2 -3.2 gain s21 db low ip3 20.5 21.5 ? high ip3 23.1 24.1 ? bypass -7.7 -6.7 ? reverse isolation s12 db low ip3 ? -27.3 -20 high ip3 ? -30.6 -25 bypass ? -6.7 -6.2 output return loss s22 db low ip3 ? -6.6 -5.6 high ip3 ? -10.2 -9.2 bypass ? -11.7 -10.7 table 17. typical 470 mhz?860 mhz evaluation board performance (continued) (vcc = 2.7v, t a = 25 c ) characteristic symbol min typ max unit
application information mc13850 advance information, rev. 1 freescale semiconductor 37 860 mhz (refer to figure 14 ) rf gain g db low ip3 16.4 17.4 ? high ip3 18 19 ? bypass -6.7 -6.2 ? noise figure nf db low ip3 ? 1.22 1.5 high ip3 ? 1.32 1.6 bypass ? 5.2 5.7 input ip3 iip3 dbm low ip3 -5.3 -4 ? high ip3 -2.3 -1.1 ? bypass 23.7 24.7 ? power output at 1.0 db gain compression p1db dbm low ip3 7.4 8.4 ? high ip3 8.1 9.2 ? input return loss s11 db low ip3 ? -13.7 -11 high ip3 ? -21.3 -17 bypass ? -6 -5 gain s21 db low ip3 17 18 ? high ip3 18.4 19.4 ? bypass -6.8 -5.8 ? reverse isolation s12 db low ip3 ? -26.9 -25 high ip3 ? -29.2 -28.2 bypass ? -5.7 -5 table 17. typical 470 mhz?860 mhz evaluation board performance (continued) (vcc = 2.7v, t a = 25 c ) characteristic symbol min typ max unit
application information mc13850 advance information, rev. 1 38 freescale semiconductor 4.2 900 mhz application this application was designed to provide nf < 1.4 db , s21 gain > 21 db, oip3 of 17 dbm with return losses better than -10 db at 900 mhz. typical performance that can be e xpected from this circuit at 2.7v is listed in table 18 . figure 15 shows the 900 mhz schematic with package pinouts and circuit components. figure 15. 900 mhz application schematic output return loss s22 db low ip3 ? -5.3 -4.3 high ip3 ? -7.2 -6.2 bypass ? -8.2 -7.2 table 18. typical 900 mhz evaluation board performance (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit 900 mhz (refer to figure 15 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma table 17. typical 470 mhz?860 mhz evaluation board performance (continued) (vcc = 2.7v, t a = 25 c ) characteristic symbol min typ max unit rf out gain enable r1 0402 330 ohm l1 040 2 22 nh c1 0402 27 pf c3 0402 2.7 pf l2 040 2 8.2 nh c5 0402 .1 uf c4 0402 47 pf vcc c2 0402 .1 uf 2 5 7 6 enable2 logic rf in 3 1 8 4 . gnd nc r2 0402 15 ohm enable1 l3 0402 4.3 nh pin 1 locator on package
application information mc13850 advance information, rev. 1 freescale semiconductor 39 bypass ? 2 10 ua rf gain g db low ip3 20 21 ? high ip3 20.8 21.8 ? bypass -4.5 -3.7 ? noise figure nf db low ip3 ? 1.38 1.6 high ip3 ? 1.53 1.75 bypass ? 3.85 4.6 input ip3 iip3 dbm low ip3 -6.5 -4.1 ? high ip3 1.75 3.5 ? bypass 27 27.6 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 10.9 11.9 ? high ip3 11.1 12.1 ? input return loss s11 db low ip3 ? -10.7 -7 high ip3 ? -15.3 -12 bypass ? -9.5 -8 gain s21 db low ip3 20.1 21.1 ? high ip3 20.8 21.8 ? bypass -4.5 -3.5 ? reverse isolation s12 db low ip3 ? -23.9 -22.8 high ip3 ? -26.8 -25.7 bypass ? -3.5 -2.5 output return loss s22 db low ip3 ? -10.7 -9.6 high ip3 ? -18.4 -15 bypass ? -18 -12.6 table 18. typical 900 mhz evaluation board performance (continued) (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit
application information mc13850 advance information, rev. 1 40 freescale semiconductor 4.3 900 mhz high ip3 application this application was designed to demonstrate performance at 900 mhz using capacitive feedback from the output to input to raise ip3. typical performance that can be expected fr om this circuit at 2.75v is listed in table 19 . figure 16 shows the high ip3 900 mhz schematic with package pinouts and circuit components. this 900 mhz application differs from the 900 mhz application in section 4.2, ?900 mhz application in that it uses output to input feedback capacitance to raise the ip3 performance. figure 16. 900 mhz high ip3 application schematic table 19. typical 900 mhz high ip3 evaluation board performance (vcc - 2.75v, ta = 25 c) characteristic symbol min typ max unit 900 mhz (refer to figure 16 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma bypass ? 2 10 ua rf gain g db low ip3 15.5 16.5 ? high ip3 16.1 17.1 ? bypass -5.2 -4.2 ? rf out gain enable r1 0402 330 ohm l1 0402 9.1 nh c1 0402 100 pf c6 0402 5.1 pf l2 0402 5.6 nh c7 0402 .1 uf c8 0402 47 pf vcc c5 0402 1pf c2 0402 .1 uf 2 5 7 6 enable 2 logic rf in 3 1 8 4 . gn d c3 0402 0.5 pf c4 0402 0.5 pf nc r2 0402 10 o hm enable 1 pin 1 locator on pa ck age
application information mc13850 advance information, rev. 1 freescale semiconductor 41 noise figure nf db low ip3 ? 1.43 1.65 high ip3 ? 1.55 1.75 bypass ? 4.6 5.8 input ip3 iip3 dbm low ip3 -6 -2.9 ? high ip3 6 8 ? bypass 26.2 27.7 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 8 12 ? high ip3 11.5 13.5 ? input return loss s11 db low ip3 ? -12 -8 high ip3 ? -10 -8 bypass ? -9 -7 gain s21 db low ip3 15.7 16.7 ? high ip3 16.2 17.2 ? bypass -4.7 -3.9 ? reverse isolation s12 db low ip3 ? -19.3 -17.5 high ip3 ? -22.4 -21 bypass ? -3.9 -3.2 output return loss s22 db low ip3 ? -11 -8.5 high ip3 ? -12.8 -10 bypass ? -31 -24 table 19. typical 900 mhz high ip3 eval uation board performance (continued) (vcc - 2.75v, ta = 25 c) characteristic symbol min typ max unit
application information mc13850 advance information, rev. 1 42 freescale semiconductor 4.4 1960 mhz application this application was designed to provide nf = 1.5 db , s21 gain > 15 db, oip3 of 20 dbm with return losses better than -10 db at 1960 mhz. typical performa nce that can be expected from this circuit at 2.7v is listed in table 20 . figure 17 shows the 1960 mhz schematic with package pinouts and circuit components. figure 17. 1960 mhz application schematic table 20. typical 1900 mhz evaluation board performance (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit 1960 mhz (refer to figure 17 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma bypass ? 2 10 ua rf gain g db low ip3 13.8 14.8 ? high ip3 13.9 14.9 ? bypass -4.8 -3.5 ? rf out gain enable r1 0402 33 0 ohm l1 0402 3.3 nh c1 04 02 27 pf c3 04 02 27 pf l2 0402 2.7 nh c5 0402 .1 uf c4 0402 33 pf vcc c2 0402 .1 uf 2 5 7 6 enable2 lo gic r f in 3 1 8 4 . gnd nc r2 040 2 5 ohm enable1 pin 1 locator on package l1 0402 33 nh
application information mc13850 advance information, rev. 1 freescale semiconductor 43 noise figure nf db low ip3 ? 1.5 1.8 high ip3 ? 1.75 2 bypass ? 3.2 4.4 input ip3 iip3 dbm low ip3 3.5 6.5 ? high ip3 8 9.6 ? bypass 22.6 23.6 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 1.5 3.2 ? high ip3 2.3 4 ? input return loss s11 db low ip3 ? -12 -9.5 high ip3 ? -12.5 -10 bypass ? -11 -8 gain s21 db low ip3 14 15 ? high ip3 14 15 ? bypass -4.8 -3.6 ? reverse isolation s12 db low ip3 ? -21 -20 high ip3 ? -22.5 -21.5 bypass ? -3.7 -2.5 output return loss s22 db low ip3 ? -13 -9 high ip3 ? -15 -11 bypass ? -8 -6 table 20. typical 1900 mhz evaluation board performance (continued) (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit
application information mc13850 advance information, rev. 1 44 freescale semiconductor 4.5 2400 mhz application this application was designed to provide nf = 1.6 db, s21 gain = 12 db, oip3 of 23 dbm at 2400 mhz. typical performance that can be expected from this circuit at 2.7v is listed in table 21 . figure 18 shows the 2400 mhz schematic with package pinouts and circuit components. figure 18. 2400 mhz a pplication schematic table 21. typical 2400 mhz evaluation board performance (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit 2400 mhz (refer to figure 18 ) supply current icc low ip3 ? 4.7 5.7 ma high ip3 ? 9.9 12.5 ma bypass ? 2 10 ua rf gain g db low ip3 11.5 12.5 ? high ip3 12 13 ? bypass -4 -3 ? rf out gain enable r1 0402 330 ohm l1 0402 3 nh c1 04 02 5 pf c3 0402 27 pf l2 0402 3.3 nh c5 0402 .1 u f c4 0402 33 pf vcc c2 0402 .1 uf 2 5 7 6 enable2 logic r f in 3 1 8 4 . gnd nc r2 0402 5 ohm ena ble1 pin 1 locator on pa ckage
application information mc13850 advance information, rev. 1 freescale semiconductor 45 noise figure nf db low ip3 ? 1.6 1.95 high ip3 ? 1.85 2.2 bypass ? 3.2 4.3 input ip3 iip3 dbm low ip3 7 10 ? high ip3 11 12.5 ? bypass 26 27.2 ? power output at 1.0 db gain compression p1dboutput dbm low ip3 -1 1 ? high ip3 0 2.2 ? input return loss s11 db low ip3 ? -9 -7.5 high ip3 ? -9.5 -8 bypass ? -19.5 -12 gain s21 db low ip3 11.6 12.6 ? high ip3 12 13 ? bypass -3.7 -3.2 ? reverse isolation s12 db low ip3 ? -20 -19 high ip3 ? -20.6 -20 bypass ? -2.9 -2.4 output return loss s22 db low ip3 ? -25 -15 high ip3 ? -27 -15 bypass ? -16 -10 table 21. typical 2400 mhz evaluation board performance (continued) (vcc = 2.7v, ta = 25 c) characteristic symbol min typ max unit
printed circuit board and bill of materials mc13850 advance information, rev. 1 46 freescale semiconductor 5 printed circuit board and bill of materials figure 19 is a drawing of the printed circuit board. figure 21 through figure 25 are drawings of the evaluation boards used for each of the ap plication frequency d esigns described in section 4 . these drawings show the boards with the circuit matching components pla ced and identified. figure 19. printed circuit board figure 20. typical assembled evaluation board with sma connectors note: dimensions are in inches and [mm]. soldering note: the center flag under the part needs to be soldered down to ground on the bo
printed circuit board and bill of materials mc13850 advance information, rev. 1 freescale semiconductor 47 figure 21. 470?860 mhz application board figure 22. 900 mhz application board
printed circuit board and bill of materials mc13850 advance information, rev. 1 48 freescale semiconductor figure 23. 900 mhz high ip3 application board figure 24. 1960 mhz application board
printed circuit board and bill of materials mc13850 advance information, rev. 1 freescale semiconductor 49 figure 25. 2400 mhz application board the bill of materials for each of the application frequency circuit boards is listed in table 22 . the value, case size, manufacturer and circuit function of each component are provided. table 22. bill of materials for the application circuit boards component value case manufacturer comments 470?860 mhz (refer to figure 21 ) c1 27 pf 402 murata dc block, input match c2 0.1 uf 402 murata low freq. bypass c3 5 pf 402 murata dc block, output match c4 47 pf 402 murata 860 mhz short c5 0.1 uf 402 murata low freq. bypass l1 47 nh 402 murata input match l2 18 nh 402 murata output match, bias decouple l3 4.3 nh 402 murata input match r1 330 402 koa logic circuit bias r2 51 402 koa lower gain, improve return losses 900 mhz (refer to figure 22 ) c1 27 pf 402 murata dc block, input match c2 0.1 uf 402 murata dc block, input match c3 2.7 pf 402 murata dc block, output match c4 47 pf 402 murata 900 mhz short c5 0.1 uf 402 murata low freq. bypass l1 22 nh 402 murata input match
printed circuit board and bill of materials mc13850 advance information, rev. 1 50 freescale semiconductor l2 8.2 nh 402 murata output match, bias decouple l3 4.3 nh 402 murata input match r1 330 402 koa logic circuit bias r2 15 402 koa lower gain, improve return losses 900 mhz high ip3 (refer to figure 23 ) c1 100 pf 402 murata dc block, input match c2 0.1 uf 402 murata dc block, input match c3 0.5 pf 402 murata ip3 improvement c4 0.5 pf 402 murata ip3 improvement c5 1.0 pf 402 murata output match c6 5.1 pf 402 murata output match c7 0.1 uf 402 murata bypass c8 47 pf 402 murata 900 mhz short l1 9.1 nh 402 murata input match l2 5.6 nh 402 murata output match r1 330 402 koa logic circuit bias r2 10 402 koa lower gain, increase stability 1960 mhz (refer to figure 24 ) c1 27 pf 402 murata dc block, input match c2 0.1 uf 402 murata dc block c3 27 pf 402 murata dc block, output match c4 33 pf 402 murata 1960 mhz short c5 0.1 uf 402 murata low freq. bypass l1 33 nh 402 murata input match l2 3.3 nh 402 murata input match l3 2.7 nh 402 murata output match, bias decouple r1 330 402 koa logic circuit bias r2 5 402 koa lower gain, increase stability 2400 mhz (refer to figure 25 ) c1 5 pf 402 murata dc block, input match c2 0.1 uf 402 murata dc block c3 27 pf 402 murata dc block, output match table 22. bill of materials for the application circuit boards (continued) component value case manufacturer comments
printed circuit board and bill of materials mc13850 advance information, rev. 1 freescale semiconductor 51 c4 33 pf 402 murata 1960 mhz short c5 0.1 uf 402 murata low freq. bypass l1 3 nh 402 murata input match l2 3.3 nh 402 murata input match r1 330 402 koa logic circuit bias r2 5 402 koa lower gain, increase stability table 22. bill of materials for the application circuit boards (continued) component value case manufacturer comments
packaging mc13850 advance information, rev. 1 52 freescale semiconductor 6 packaging figure 26 and figure 27 are the package drawings with dimensions for the mlpd-8, 2 2 0.6 mm, package. figure 26. outline dimensions for mlpd-8 detail g (see figure 27 )
product documentation mc13850 advance information, rev. 1 freescale semiconductor 53 figure 27. packaging details 7 product documentation this data sheet is labele d as a particular type: product preview, advance information, or technical data. definitions of these types are avai lable at: http://www.freescale.com. 8 revision history table 23 summarizes the revisions to this document since rev. 0. table 23. revision history revision description of change 0 initial release 1 technical content changes include: ?in ta b l e 4 , min and max values added. ? added ta b l e 5 ? ta b l e 1 6 , s parameters. ? added figure 2 ? figure 9 , constant gain and noise figure circles. ? added figure 10 , figure 11 , minimum nf and associated gain. ? added figure 12 , figure 13 , maximum stable gain and forward insertion gain. ? section 4 application circuit performance parameters extensively revised. ? section 5 printed circuit board and application board drawings added. ? ta bl e 2 2 bill of materials for application revised. ? section 6 package drawing changed to mlpd-8 package.
document number: mc13850 rev. 1 12/2010 information in this document is provid ed solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specif ically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applic ations intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale? and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006-2010. all rights reserved. rohs-compliant and/or pb-free versions of freescale products have the functionality and electrical characteristics as thei r non-rohs-compliant and/or non-pb-free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www.freescale.com/epp . how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com

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