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| savantic semiconductor product specification silicon pnp power transistors 2SB632 2SB632k d escription with to-126 package complement to type 2sd612/612k high collector dissipation wide aso(safe operating area) applications 25v/35v, 2a low-frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SB632 -25 v cbo collector-base voltage 2SB632k open emitter -35 v 2SB632 -25 v ceo collector-emitter voltage 2SB632k open base -35 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -2 a i cm collector current-peak -3 a t a =25 1 p d total power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB632 2SB632k characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SB632 -25 v (br)ceo collector-emitter breakdown voltage 2SB632k i c =-1ma; r be = ; -35 v 2SB632 -25 v (br)cbo collector-base breakdown voltage 2SB632k i c =-10a ;i e =0 -35 v v (br)ebo emitter-base breakdown voltage i e =-10a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-1.5a ;i b =-0.15a -0.4 -0.9 v v besat base-emitter saturation voltage i c =-1.5a ;i b =-0.15a -1.1 -1.5 v i cbo collector cut-off current v cb =-20v; i e =0 -1 a i ebo emitter cut-off current v eb =-4v; i c =0 -1 a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 60 320 h fe-2 dc current gain i c =-1.5a ; v ce =-2v 30 f t transition frequency i c =-50ma ; v ce =-10v 100 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 45 pf switching times t on turn-on time 0.06 s t f fall time 0.08 s t stg storage time i c =500ma ; v ce =12v i b1 =-i b2 =50ma 0.40 s h fe-1 classifications d e f 60-120 100-200 160-320 savantic semiconductor product specification 3 silicon pnp power transistors 2SB632 2SB632k package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2SB632 2SB632k |
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