bc x5 2 pnp transistors plastic-encapsulate transistors rohs compliant product elektronische bauelemente 1.base 2.collector 3.emitter 1 2 3 features any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 1 of 1 4.4~4.6 1.4~1.8 0.35~0.44 1.4~1.6 0.32~0.52 0.36~0.56 3.94~4.25 2.3~2.6 0.9~1.1 1.5ref. 2.9~3.1 d i m e n s i s i o n i n m i l l i m e t e r s o t - 8 9 c o pow er di s s i pat i on p cm : 0. 5 w ( t am b = 25 ) co lle c t o r c u rre n t i cm : - 1 a c ol l ec t or - b as e v ol t ag e v ( b r) cb o : - 6 0 v o p er at i ng and s t or ag e j unc t i on t em p e r at ur e r ang e t j , t st g : - 5 5 to + 1 5 0 e l e c t r i c al ch ar ac t e r i s t i c s (t a m b = 2 5 u n l ess o t h er w i se sp eci f i ed ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n m a x u n i t c o l l ec t o r - b as e b r eakdow n vo l t ag e v ( b r) cb o i c =- 100 a , i e =0 - 60 v c o l l e c t o r - e m i t t er br ea kdow n vo l t age v ( b r) ce o i c =- 10 m a , i b =0 - 60 v e m i t t e r - b ase br eak dow n vo l t age v ( br ) ebo i e = - 10 a , i c =0 - 5 v c o lle c to r c u t-o ff c u rre n t i cb o v cb =- 30 v , i e =0 - 0 . 1 a e m i t t e r cut - of f cur r ent i ebo v eb =- 5 v , i c =0 - 0 . 1 a h fe (1 ) v ce =- 2v , i c = - 150 m a 63 63 100 250 160 250 h fe (2 ) v ce =- 2v , i c = - 5 m a 63 d c c u r r e n t g a i n b c x 5 2 b c x 5 2 - 1 0 b c x 5 2 - 1 6 h fe (3 ) v ce =- 2v , i c = - 500 m a 40 c o l l ec t o r - e m i t t er sat u r a t i o n vo l t a g e v ce ( s a t ) i c =- 50 0 m a , i b = - 5 0 ma -0 .5 v b ase- e m i t t e r vo l t age v be( o n ) i c =- 500 m a , v ce =- 2 v - 1 v t r ans i t i on f r e quency f t v ce = - 5 v , i c = - 1 0 m a f = 100m h z 50 m h z devi ce m arki n g bcx5 2 = ae bcx5 2 - 1 0 = a g bcx5 2 - 1 6 = am c o c o c o
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