|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
TR8 SERIES SILICON TRIACS l l l l 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TR8-400-70 TR8-600-70 TR8-700-70 TR8-800-70 SYMBOL VALUE 400 600 700 800 8 70 80 1 2.2 0.9 -40 to +110 -40 to +125 230 UNIT Repetitive peak off-state voltage (see Note 1) VDRM V Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 m s) Average gate power dissipation at (or below) 85C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL A A A A W W C C C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 320 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = rated VDRM Vsupply = +12 V IGTM Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V Vsupply = +12 V VGTM Peak gate trigger voltage Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V All voltages are with respect to Main Terminal 1. TEST CONDITIONS IG = 0 RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W TC = 110C tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s 2 -12 -9 20 0.7 -0.8 -0.8 0.9 2 -2 -2 2 V MIN TYP MAX 2 50 -50 -50 mA UNIT mA TR8 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VTM IH IL dv/dt dv/dt(c) Peak on-state voltage Holding current Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage ITM = 12 A Vsupply = +12 V Vsupply = -12 V Vsupply = +12 V Vsupply = -12 V VDRM = Rated VDRM VDRM = Rated VDRM TEST CONDITIONS IG = 50 mA IG = 0 IG = 0 (see Note 7) IG = 0 ITRM = 12 A TC = 110C TC = 85C 5 100 (see Note 6) Init' ITM = 100 mA Init' ITM = -100 mA MIN TYP 1.6 5 -9 MAX 2.1 30 -30 50 -50 UNIT V mA mA V/s V/s All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER Rq Rq JC JA MIN TYP MAX 1.8 62.5 UNIT C/W C/W Junction to case thermal resistance Junction to free air thermal resistance TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 Vsupply IGTM + + + + VAA = 12 V VGT - Gate Trigger Voltage - V RL = 10 W t p(g) = 20 s 10 GATE TRIGGER VOLTAGE vs CASE TEMPERATURE Vsupply IGTM + + + + VAA = 12 V RL = 10 W t p(g) = 20 s IGT - Gate Trigger Current - mA 100 10 1 1 0*1 -60 -40 -20 0 20 40 60 80 100 120 0*1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. TR8 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs CASE TEMPERATURE 1000 Vsupply + IH - Holding Current - mA 100 VAA = 12 V VGF - Gate Forward Voltage - V IG = 0 Initiating ITM = 100 mA 10 GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT 1 10 0*1 1 0*1 -60 -40 -20 0 20 40 60 80 100 120 QUADRANT 1 0*01 0*0001 0*001 IA = 0 TC = 25 C 0*01 0*1 1 TC - Case Temperature - C IGF - Gate Forward Current - A Figure 3. Figure 4. LATCHING CURRENT vs CASE TEMPERATURE 1000 Vsupply IGTM + + 100 + + VAA = 12 V ITSM - Peak Full-Sine-Wave Current - A 100 SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TC 85 C IL - Latching Current - mA 10 No Prior Device Conduction Gate Control Guaranteed 10 1 -60 -40 -20 0 20 40 60 80 100 120 1 1 10 100 1000 Consecutive 50-Hz Half-Sine-Wave Cycles TC - Case Temperature - C Figure 5. Figure 6. TR8 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE P(av) - Maximum Average Power Dissipated - W 10 IT(RMS) - Maximum On-State Current - A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature - C 32 28 24 20 16 12 8 4 0 0 MAX AVERAGE POWER DISSIPATED vs RMS ON-STATE CURRENT TJ = 110 C Conduction Angle = 360 Above 8 A rms See ITSM Figure 2 4 6 8 10 12 14 16 IT(RMS) - RMS On-State Current - A Figure 7. Figure 8. PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 C1 50 Hz IMT2 VMT2 DUT RG R1 IG VMT2 dv/dt 63% IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. 10% VDRM Figure 9. TR8 SERIES SILICON TRIACS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. |
Price & Availability of TR8 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |