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| SIR402DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.006 at VGS = 10 V 0.008 at VGS = 4.5 V ID (A)a 35 12 nC 35 Qg (Typ.) FEATURES * Halogen-free * TrenchFET(R) Power MOSFET * 100 % Rg Tested * 100 % UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS * Synchronous Rectification * DC/DC Point-of-Load * Server 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SIR402DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 C TC = 70 C TA = 25 C TA = 70 C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 30 20 35a 35a 20.7b, c 16.6b, c 70 35 61 30 3.5b, c 36 23 4.2b, c 2.7b, c - 55 to 150 260 Unit V A mJ A TC = 25 C Continuous Source-Drain Diode Current TA = 25 C TC = 25 C TC = 70 C Maximum Power Dissipation TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 25 2.9 Maximum 30 3.5 Unit C/W Notes: a. Based on TC = 25 C. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed www..complated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed copper (not and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. Document Number: 68683 S-81733-Rev. B, 04-Aug-08 www.vishay.com 1 SIR402DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 17.5 A VDS = 15 V, ID = 20 A Min. 30 Typ. Max. Unit V 24 -6 1 3 100 1 5 50 0.0048 0.0064 82 0.006 0.008 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 1700 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 350 140 28 12 5.4 4.6 1.2 25 20 25 15 12 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 10 25 10 TC = 25 C IS = 10 A, VGS = 0 V 0.8 25 IF = 10 A, dI/dt = 100 A/s, TJ = 25 C 17 13 12 2.4 40 30 40 25 20 15 40 15 30 70 1.2 50 35 ns 42 21 nC pF A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www..com www.vishay.com 2 Document Number: 68683 S-81733-Rev. B, 04-Aug-08 SIR402DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 70 VGS = 10 thru 4 V 60 8 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 3 V 10 TC = - 55 C 6 TC = 25 C 4 2 TC = 125 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.010 2100 1800 R DS(on) - On-Resistance () 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 C - Capacitance (pF) 1500 1200 900 600 300 Crss 0.002 0 10 20 30 40 50 60 70 0 0 5 Transfer Characteristics Ciss Coss 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 15 V 1.6 1.8 ID = 20 A Capacitance 1.4 (Normalized) VGS = 10 V, 4.5 V 1.2 6 VDS = 24 V 4 1.0 2 0.8 0 0 6 12 18 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 www..com Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68683 S-81733-Rev. B, 04-Aug-08 www.vishay.com 3 SIR402DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.015 ID = 20 A R DS(on) - On-Resistance () 0.012 I S - Source Current (A) 10 TJ = 150 C TJ = 25 C 0.009 TJ = 125 C 0.006 0.003 TJ = 25 C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 2.2 40 50 On-Resistance vs. Gate-to-Source Voltage 2.0 V GS(th) (V) 1.8 1.6 1.4 10 Power (W) ID = 250 A 30 20 1.2 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 s 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25 C Single Pulse 0.01 0.1 1 BVDSS Limited 10 100 10 s DC www..com VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68683 S-81733-Rev. B, 04-Aug-08 SIR402DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 80 40 32 60 Power Dissipation (W) I D - Drain Current (A) 24 40 Package Limited 16 20 8 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www..com Document Number: 68683 S-81733-Rev. B, 04-Aug-08 www.vishay.com 5 SIR402DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1 .Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 58 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case www..com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68683. www.vishay.com 6 Document Number: 68683 S-81733-Rev. B, 04-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. www..com Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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