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IGBT MODULE ( N series ) n Features
* Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (~3 Times Rated Current)
n Outline Drawing
n Applications
* High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply
n Maximum Ratings and Characteristics
* Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 20 75 150 75 150 320 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
* Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=75mA VGE=15V IC=75A VGE=0V VCE=10V f=1MHz VCC=300V IC=75A VGE= 15V RG=33 IF=75A VGE=0V IF=75A Min. Typ. Max. 1.0 15 7.5 2.8 Units mA A V V pF 1.2 0.6 1.0 0.35 3.0 300
4.5 4950 1100 500 0.6 0.2 0.6 0.2
s V ns
* Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.39 0.90 Units C/W
0.05
Collector current vs. Collector-Emitter voltage T j=25C 175 V GE =20V,15V,12V 150 150 175
Collector current vs. Collector-Emitter voltage T j=125C
V GE =20V,15V, 12V,
[A]
C
125 10V 100 75 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
[A]
125 10V 100 75 50 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 8V Collector-Emitter vs. Gate-Emitter voltage T j=25C
Collector current : I
Collector current : I
C
Collector-Emitter vs. Gate-Emitter voltage T j=125C 10
CE
10
[V]
CE
8
[V]
8
Collector-Emitter voltage : V
6
Collector-Emitter voltage : V
6
4
IC= 150A 75A 37.5A
4
IC= 150A
2
2
75A 37.5A
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current V CC =300V, R G =33 , V GE =15V, T j=25C 1000 1000
Switching time vs. Collector current V CC =300V, R G =33 , V GE =15V, Tj=125C
, t r , t off , t f [nsec]
, t r , t off , t f [nsec]
t on t off
t off t on tr tf
tr tf 100
on
on
100
Switching time : t
10 0 25 50 75 100 125 Collector current : I C [A]
Switching time : t
10 0 25 50 75 100 125 Collector current : I C [A]
Switching time vs. R G V CC =300V, I C =75A, V GE =15V, T j=25C 500 t on t off
Dynamic input characteristics T j=25C 25 V CC =200V 400 300V 400V 20
, t r , t off , t f [nsec]
1000
tr tf 100
Collector-Emitter voltage : V
CE
[V]
300
15
Switching time : t
on
200
10
100
5
10 10 Gate resistance : R G [ ] 100
0
0
100
200
300
400
0
Gate charge : Q G [nC]
Forward current vs. Forward voltage V GE = O V 175 150
rr [nsec]
Reverse recovery characteristics t rr , I rr vs. I F
T j=125C 25C
rr
[A]
F
Reverse recovery current : I
125 100 75 50 25 0 0 1 2 Forward voltage : V F [V] 3 4
[A]
t rr 125C 100 t rr 25C I rr 125C I rr 25C
Forward current : I
Reverse recovery time
:t
10
0
25
50
75
100
125
Forward current : I F [A]
Reversed biased safe operating area Transient thermal resistance +V GE =15V, -V GE <15V, T j<125C, R G >33 700
[C/W]
1
Diode 600 IGBT
th(j-c)
[A]
C
500 SCSOA 400 300 200 100 RBSOA (Repetitive pulse) 0 (non-repetitive pulse)
Thermal resistance : R
0,1
Collector current : I
0,001
0,01
0,1
1
0
100
200
300
400
500
600
Pulse width : PW [sec]
Collector-Emitter voltage : V CE [V]
Switching loss vs. Collector current V CC=300V, R G =33 , V GE =15V 7
Capacitance vs. Collector-Emitter voltage T j=25C
, E off , E rr [mJ/cycle]
, C oes , C res [nF]
E off 125C 6 5 E off 25C 4 3 2 1 0 0 25 50 75 100 Collector Current : I C [A] E on 125C E on 25C
10 C ies
on
ies
Switching loss : E
Capacitance : C
1 C oes C res
E rr 125C E rr 25C 125
0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V GE [V]
Fuji Electric GmbH
Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
Specification is subject to change without notice
May 97

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