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DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. MARKING TYPE NUMBER BFG67 (Fig.1) BFG67/X (Fig.1) BFG67/XR (Fig.2) CODE V3 V12 V26 Fig.1 Simplified outline SOT143B. handbook, 2 columns 4 BFG67; BFG67/X; BFG67/XR PINNING DESCRIPTION PIN BFG67 1 2 3 4 collector base emitter emitter BFG67/X collector emitter base emitter BFG67/XR collector emitter base emitter 3 handbook, 2 columns 3 4 1 Top view 2 MSB014 2 Top view 1 MSB035 Fig.2 Simplified outline SOT143R. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot Cre fT GUM F PARAMETER collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure Ts 65 C IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 500 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz open base CONDITIONS - - - 0.5 8 17 1.3 2.2 TYP. MAX. 10 50 300 - - - - - V mA mW pF GHz dB dB dB UNIT 1998 Oct 02 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature BFG67; BFG67/X; BFG67/XR CONDITIONS open emitter open base open collector Ts 65 C; see Fig.3; note 1 - - - - - MIN. MAX. 20 10 2.5 50 380 150 175 V V V UNIT mA mW C C -65 - CONDITIONS note 1 VALUE 290 UNIT K/W MBC984 - 1 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 T ( o C) s 200 Fig.3 Power derating curve. 1998 Oct 02 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistors CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS VCB = 5 V; IE = 0 IC = 15 mA; VCE = 5 V BFG67; BFG67/X; BFG67/XR MIN. - 60 - - - - - - - - - - - TYP. 100 8 0.7 1.3 0.5 17 10 1.3 1.7 2.5 3 MAX. 50 - - - - - - - - - - - UNIT nA GHz pF pF pF dB dB dB dB dB dB IC = 15 mA; VCE = 8 V; f = 500 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz F noise figure s = opt; IC = 5 mA; VCE = 8 V Tamb = 25 C; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; ZS = 60 IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; ZS = 60 Note S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 1998 Oct 02 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB301 MBB302 120 handbook, halfpage h FE 0.8 handbook, halfpage Cre (pF) 0.6 80 0.4 40 0.2 0 0 20 40 I C (mA) 60 0 0 4 8 12 VCB (V) 16 VCE = 5 V. IC = ic = 0; f = 1 MHz. Fig.4 DC current gain as a function of collector current. Fig.5 Feedback capacitance as a function of collector-base voltage. handbook, halfpage 10 MBB303 MBB304 handbook,25 halfpage fT (GHz) 8 gain (dB) 20 MSG G max 6 G UM 15 4 10 2 5 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 IC (mA) 40 VCE = 8 V; Tamb = 25 ; f = 2 GHz. VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Transition frequency as a function of collector current. Fig.7 Gain as a function of collector current. 1998 Oct 02 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 50 MBB305 handbook, halfpage gain (dB) 40 G UM 50 gain (dB) MBB306 40 G UM 30 30 MSG 20 G max 10 10 20 MSG G max 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 VCE = 8 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V; IC = 15 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. MBB307 handbook,50 halfpage gain (dB) handbook, halfpage 4 MBB308 F (dB) G UM 3 f = 2 GHz 40 1 GHz 30 900 MHz MSG 2 20 G max 1 10 500 MHz 0 10 10 2 10 3 f (MHz) 10 4 0 1 10 I C (mA) 100 VCE = 8 V; IC = 30 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V. Fig.10 Gain as a function of frequency. Fig.11 Minimum noise figure as a function of collector current. 1998 Oct 02 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 4 MBB309 F (dB) 3 I C = 30 mA 15 mA 5 mA 2 1 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. Fig.12 Minimum noise figure as a function of frequency. BFG67/X f (MHz) 500 8 VCE (V) 5 IC (mA) st un re gi 1 stability circle 2 ab le Noise Parameters Fmin (dB) 0.95 Gamma (opt) (mag) 0.455 (ang) 33.8 Rn/50 0.288 +j 0 -j 2 dB 0.2 3 dB 5 0.2 0.5 1 0.2 Fmin=0.95 dB OPT 2 5 10 5 10 on 0.5 10 1.5 dB 0.5 1 ZO = 50 . 2 MBB317 Fig.13 Noise circle figure. 1998 Oct 02 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67/X f (MHz) 1000 8 VCE (V) 5 un s reg table ion BFG67; BFG67/X; BFG67/XR IC (mA) 0.5 stability circle 1 2 Noise Parameters Fmin (dB) 1.3 Gamma (opt) (mag) 0.375 (ang) 65.9 Rn/50 0.304 0.2 Fmin =1.3 dB OPT 5 10 +j 0 -j 0.2 0.5 1 2 5 10 10 5 2 dB 0.2 3 dB 4 dB 0.5 1 ZO = 50 . 2 MBB316 Fig.14 Noise circle figure. BFG67/X f (MHz) 2000 8 VCE (V) 5 IC (mA) 1 0.5 2 Noise Parameters Fmin (dB) 2.2 Gamma (opt) (mag) 0.391 (ang) 136.5 Rn/50 +j 0.2 Fmin =2.2 dB 3 dB OPT 0 -j G max =12dB 0.2 8 dB 11 dB 10 dB 9 dB 5 0.2 0.5 1 2 5 4 dB 5 dB 5 10 10 0.184 10 Average Gain Parameters GMAX (dB) 12 Gamma (max) (mag) 0.839 (ang) -170 0.5 1 ZO = 50 . 2 MBB315 Fig.15 Noise circle figure. 1998 Oct 02 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 3 GHz 0.2 5 10 0 -j 40 MHz 0.2 5 10 0.2 0.5 1 2 5 10 +j 0.5 1 VCE = 8 V; IC = 15 mA; ZO = 50 . 2 MBB314 Fig.16 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 120 60 150 30 40 MHz + 180 50 40 30 20 10 3 GHz 0 - 150 30 120 VCE = 8 V; IC = mA; ZO = 50 . 90 60 MBB313 Fig.17 Common emitter forward transmission coefficient (S21). 1998 Oct 02 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz 10 0.5 1 VCE = 8 V; IC = 15 mA. 2 MBB312 Fig.18 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 120 60 150 3 GHz 30 180 0.5 0.4 0.3 0.2 0.1 40 MHz + 0 - 150 30 120 90 VCE = 8 V; IC = 15 mA. 60 MBB311 Fig.19 Common emitter output reflection coefficient (S22). 1998 Oct 02 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistors PACKAGE OUTLINES Plastic surface mounted package; 4 leads BFG67; BFG67/X; BFG67/XR SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Oct 02 11 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Plastic surface mounted package; reverse pinning; 4 leads SOT143R D B E A X y vMA HE e bp wM B 3 4 Q A A1 c 2 b1 e1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-10 1998 Oct 02 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFG67; BFG67/X; BFG67/XR This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 13 Philips Semiconductors Product specification NPN 8 GHz wideband transistors NOTES BFG67; BFG67/X; BFG67/XR 1998 Oct 02 14 Philips Semiconductors Product specification NPN 8 GHz wideband transistors NOTES BFG67; BFG67/X; BFG67/XR 1998 Oct 02 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Oct 02 Document order number: 9397 750 04349 |
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