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2DA2018
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Features
* * * * * Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Surface Mount Package "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
* * * * * * Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate)
ADVANCE INFORMATION
Applications
* * * DC-DC converter Portable equipments Power management units
C
SOT-523
B
C
B
E
E
Top View
Device Symbol
Top View Pin Configuration
Ordering Information (Note 3)
Product 2DA2018-7
Notes:
Marking KTF
Reel size (inches) 7
Tape width (mm) 8mm
Quantity per reel 3,000
1. No purposefully added lead. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com
Marking Information
KTF
YM
KTF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)
Date Code Key www..com Year Code
2009 W Feb 2
2010 X Mar 3
2011 Y Apr 4 May 5
2012 Z Jun 6
2013 A Jul 7 Aug 8
2014 B Sep 9
2015 C Oct O Nov N
2015 C Dec D
Month Code
Jan 1
2DA2018
Document number: DS31823 Rev. 3 - 2
1 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
2DA2018
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -15 -12 -6 -500 -1 Unit V V V mA A
ADVANCE INFORMATION
Thermal Characteristics
Characteristic Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol PD RJA TJ, TSTG
Value 150 833 -55 to +150
Unit mW C/W C
160 140
P(pk), PEAK TRANSIENT POWER (W)
100
PD, POWER DISSIPATION (mW)
80
Single Pulse RJA(t) = r(t) * RJA RJA = 470C/W
120 100 80 60 40 20 0 0
RJA = 833C/W
60
TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
40
20
20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0 1 100 1,000 0.0001 0.001 0.01 0.1 10 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 470C/W P(pk)
D = 0.02 D = 0.01 D = 0.005
www..com 0.01
t1
D = Single Pulse
t2 T J - T A = P * RJA(t) Duty Cycle, D = t1 /t2
0.001 0.0001
0.001
0.01
0.1 1 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response
10
100
1,000
2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
2DA2018 Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cobo fT ton td tr toff ts tf Min -15 -12 -6 270 Typ 7.4 260 40 18 22 106 87 19 Max -100 -50 -100 680 -250 Unit V V V nA A nA mV pF MHz ns ns ns ns ns ns Test Condition IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -15V, IE = 0 VCB = -15V, IE = 0, TA = 150C VEB = -6V, IC = 0 VCE = -2V, IC = -10mA IC = -200mA, IB = -10mA VCB = -10V, f = 1.0MHz VCE = -2V, IC = -10mA, f = 100MHz
ADVANCE INFORMATION
Emitter Cutoff Current DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCC = -6V IC = -200mA, IB1 = IB2 = -10mA
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
1.2 1.0
IB = 5mA IB = 4mA
800 700 hFE, DC CURRENT GAIN 600
TA = 125C
IC, COLLECTOR CURRENT (A)
0.8
IB = 3mA
500
TA = 85C
0.6
IB = 2mA
400 300 200
TA = -55C TA = 25C
0.4
IB = 1mA
0.2
100
0
0
2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
0 0.1
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0.1
IC/IB = 10
1.0
VCE = 2V
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.8
T A = -55C
0.6
T A = 25C
TA = 150C
T A = 85C TA = 25C
0.01
TA = 125C
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TA = -55C
0.4
TA = 85C
0.2
TA = 150C
T A = 125C
0.001 0.01
0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0 0.01
0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current
2DA2018
Document number: DS31823 Rev. 3 - 2
3 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
2DA2018
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0
VCE = 5V
1.2
IC/IB = 20
0.8
TA = -55C
1.0
0.8
TA = -55C
0.6
TA = 25C
ADVANCE INFORMATION
0.6
TA = 25C
0.4
T A = 85C
0.4
TA = 125C
TA = 85C
0.2
T A = 150C
TA = 125C
0.2
TA = 150C
0 0.01
0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0 0.01
0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
100
f = 1MHz
1.0
Cibo
0.8
TA = -55C
CAPACITANCE (pF)
Cobo
0.6
TA = 25C TA = 85C TA = 125C
10
0.4
TA = 150C
0.2
0 0.01
0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Base-Emitter Saturation Voltage vs. Collector Current
1 0.01
0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 11 Typical Capacitance Characteristics
Package Outline Dimensions
A
BC
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G H K M
N
J
D
L
SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm
2DA2018
Document number: DS31823 Rev. 3 - 2
4 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
2DA2018
Suggested Pad Layout
ADVANCE INFORMATION
Y
Z
C
Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
X
E
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any www..com use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
2DA2018
Document number: DS31823 Rev. 3 - 2
5 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated

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