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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF186/D
The RF MOSFET Line
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 28 volt base station equipment. * Guaranteed Performance @ 960 MHz, 28 Volts Output Power -- 120 Watts (PEP) Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- -28 dBc * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW 120 W, 1.0 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
LIFETIME BUY
CASE 375B-02, STYLE 2
MAXIMUM RATINGS (2)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 70C Derate above 70C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 20 14 162.5 1.25 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS (2)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.8 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3
RF DEVICE DATA (c) Motorola, Inc. 2000
MRF186 1
LAST ORDER 31JUL04
LAST SHIP 31JAN05
RF Power Field-Effect Transistor
MRF186
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc
ON CHARACTERISTICS (1)
Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 Adc Per Side) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 mAdc Per Side) Delta Gate Threshold Voltage (Side to Side) (VDS = 28 V, ID = 300 mA Per Side) VGS(th) VGS(Q) VGS(Q) VDS(on) gfs 2.5 3.3 -- -- 2.4 3 4.2 -- 0.58 2.8 4 5 0.3 0.7 -- Vdc Vdc Vdc Vdc S
LIFETIME BUY
Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc Per Side) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc Per Side)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- -- 177 45 3.4 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture) (2)
Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA, f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 11 12.2 -- dB
30
35
--
%
IMD
--
-32
-28
dBc
IRL
9
16
--
dB
Gps
--
12
--
dB
--
33
--
%
IMD
--
-32
--
dBc
IRL
--
16
--
dB
No Degradation In Output Power Before and After Test
(1) Each side of device measured separately. (2) Device measured in push-pull configuration.
MRF186 2
RF DEVICE DATA
LAST ORDER 31JUL04
LAST SHIP 31JAN05
VGG +
R1
B1
B2
VDD + + C34 C7 C8 C9 BALUN2
C1 COAX1
C2 R2
C3
C4
C5
C6 L1
C28 C26 Z2 RF INPUT N1 C20 R4 C25 Z1 C19 C21 Z3 C22 R3 Z4 Z6 C23 Z7 Z8 C24 Z9 Z10 C29 C30 C31 Z12 Z14 Z16 Z18 Z20 C32 Z22 RF OUTPUT N2 MRF186 Z13 Z15 C27 R5 BALUN1 L2 B3 B4 VDD + + C35 C16 C17 C18 Z17 Z19 Z21 C33 COAX2
Z5
Z11
DUT
LIFETIME BUY
VGG +
R6
C10
C11
C12
C13
C14
C15
10 F, 50 V, Tantalum 0.1 F, Chip Capacitor 330 pF, Chip Capacitor 47 pF, Chip Capacitor 250 F, 50 V, Electrolytic Capacitor 12 pF, Chip Capacitor 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim 5.1 pF, Chip Capacitor 3.9 pF, Chip Capacitor
L1, L2 N1, N2 R1, R6 R2, R5 R3, R4 Z1 - Z22 Balun1, Balun2, Coax1, Coax2 2.20 50 , 0.086 OD Semi-Rigid Coax Board 1/32 Glass Teflon(R), r = 2.55
Figure 1. 930 - 960 MHz Test Circuit Schematic
RF DEVICE DATA
MRF186 3
LAST ORDER 31JUL04
B1 - B4 C1, C7, C8, C10, C16, C17 C2, C11, C34, C35 C3, C6, C12, C15 C4, C5, C13, C14, C19, C20, C32, C33 C9, C18 C21, C22 C23, C30 C24, C25, C26 C27, C28
Fair Rite Products Short Ferrit Bead, 2743021446
C31
0.8 - 8.0 pF, Variable Capacitor, Johanson Gigatrim 3 Turns, #20 AWG, IDIA 0.126, 24.7 nH Type N Connectors 1 k, 1/4 W, Carbon Resistor 1.2 k, 0.1 W, Chip Resistor 75 , 0.1 W, Chip Resistor Microstrip (See Component Placement)
LAST SHIP 31JAN05
TYPICAL CHARACTERISTICS
-20 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz IDQ = 800 mA IMD, INTERMODULATION DISTORTION (dBc) 3rd Order -25
-30
IDQ = 200 mA -35 -40 400 mA -45 -50 -55 -60 0.1 VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 800 mA 1200 mA
-40 5th Order -50 7th Order -60
-70 0 25 75 100 50 Pout, OUTPUT POWER (WATTS) PEP 125 150
LIFETIME BUY
Figure 2. Intermodulation Distortion Products versus Output Power
Figure 3. Intermodulation Distortion versus Output Power
16 IDQ = 1200 mA P out, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%) 800 mA
140 120 100 80 60 40 20 0 0 1 2 5 4 3 Pin, INPUT POWER (WATTS) 6 7 8 Pout DRAIN EFFICIENCY Gps
13.8 13.6 13.4 13.2 13 12.8 12.6 12.4
15
Gps , POWER GAIN (dB)
14 400 mA
VDS = 28 V f = 960 MHz IDQ = 800 mA
13 200 mA VDD = 28 V f = 960 MHz 1 10 Pout, OUTPUT POWER (WATTS) 100
12
11
Figure 4. Power Gain versus Output Power
Figure 5. Output Power versus Input Power
140 120 P out, OUTPUT POWER (WATTS) 100 80 60 2W 40 1W 20 0 12 14 16 18 20 22 24 26 28 30 32 f = 960 MHz IDQ = 800 mA Pin = 5.5 W P out, OUTPUT POWER (WATTS)
140 120 100 TYPICAL DEVICE SHOWN 80 60 40 20 Pin = 5.5 W f = 960 MHz IDQ = 800 mA 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDD, SUPPLY VOLTAGE (VOLTS)
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Gate Voltage
MRF186 4
RF DEVICE DATA
LAST ORDER 31JUL04
Gps , POWER GAIN (dB)
LAST SHIP 31JAN05
-30
TYPICAL CHARACTERISTICS
4 3.5 ID , DRAIN CURRENT (A) 3 2.5 2 1.5 TYPICAL DEVICE SHOWN 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 5.5 6 0 0 Crss 10 30 40 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 VDS = 10 Vdc C, CAPACITANCE (pF) 200 Ciss 160 VGS = 0 Vdc f = 1 MHz
120
80 Coss 40
LIFETIME BUY
Figure 8. Drain Current versus Gate Voltage
Figure 9. Capacitance versus Voltage
12 Gps , POWER GAIN (dB) 13
Gps , POWER GAIN (dB)
VDS = 28 V Pout = 120 W (PEP) f = 960 MHz IDQ = 800 mA
-10 IRL -15 Gps -20 -25 IMD -30 -35 965
9
6 TJ = 200C TF = 70C 0 5 15 25 20 Pout, OUTPUT POWER (WATTS) 10 30 35
3
0
12 925
930
935
945 950 940 f, FREQUENCY (MHz)
955
960
Figure 10. DC Safe Operating Area
Figure 11. Broadband Circuit Performance
RF DEVICE DATA
MRF186 5
LAST ORDER 31JUL04
12.5
IMD, INTERMODULATION DISTORTION (dBc) INPUT RETURN LOSS (dB)
15
13.5
-5
LAST SHIP 31JAN05
f = 960 MHz
Zin
930 MHz
LIFETIME BUY
930 MHz ZOL* f = 960 MHz
Zo = 20
f MHz 930 945 960 Zin
Zin 2.5 + j6.9 2.5 + j7.0 2.2 + j7.1
ZOL* 4.3 + j1.2 4.3 + j1.0 4.3 + j0.9
= Complex conjugate of source impedance.
ZOL* = Conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current, efficiency and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation performance. Impedances shown represent a single channel (1/2 of MRF186) impedance measurement.
Figure 12. Series Equivalent Input and Output Impedance
MRF186 6
RF DEVICE DATA
LAST ORDER 31JUL04
VCC = 28 V, IDQ = 2
400 mA, Pout = 120 Watts (PEP)
LAST SHIP 31JAN05
VGG R1 C7 C8 C9
B2 B1 C2 C1
C34 VDD
C5 C6 C26 C3 C4 C19 C20 C21 R3 R4 C22 C12 C13 C23 R5 C25 C27 L2 C14 C15 B3 C11 C10 B4 C35 VDD R2 C24 C29 C30 C31 C28 L1
C32 C33
LIFETIME BUY
R6 VGG
C16
C17
C18
Figure 13. Component Placement Diagram of 930 - 960 MHz Broadband Test Fixture
RF DEVICE DATA
MRF186 7
LAST ORDER 31JUL04
MRF186
LAST SHIP 31JAN05
PACKAGE DIMENSIONS
0.25 (0.010)
2
M
TB
M
L
1
R
5 3 4
-B-
K
4 PL
D
DIM A B C D E F G H K L N Q R
INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.210 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.093 0.108 0.085 0.115 0.425 BSC 0.845 0.875 0.118 0.130 0.390 0.410 DRAIN DRAIN GATE GATE SOURCE
MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.33 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.36 2.74 2.16 2.92 10.80 BSC 21.46 22.23 3.00 3.30 9.91 10.41
E
N
F
LIFETIME BUY
A H C
-T-
SEATING PLANE
STYLE 2: PIN 1. 2. 3. 4. 5.
CASE 375B-02 ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26668334 HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
MRF186 8
RF DEVICE DATA MRF186/D
LAST ORDER 31JUL04
LAST SHIP 31JAN05
G
Q 2 PL
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

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