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 DMP3015LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* Low On-Resistance * 11m @ VGS = -10V * 17m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * *
SOP-8L
NEW PRODUCT
* * * * * * *
Case: SOP-8L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate)
S S S G
TOP VIEW TOP VIEW Internal Schematic
D D D D
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25C TA = 70C ID IDM Value -30 20 -13 -9.75 -45 Units V V A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA TJ, TSTG
Value 2.5 50 -55 to +150
Unit W C/W C
Device mounted on 2 oz. Copper pads on FR-4 PCB with RJA = 50C/W. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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DMP3015LSS
Document number: DS31472 Rev. 4 - 2
1 of 5 www.diodes.com
October 2008
(c) Diodes Incorporated
DMP3015LSS Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD Ciss Coss Crss RG Min -30 -1
Typ 9 14 15 2748 357 356 2.0 30.0
60.4
Max -1 100 -2 11 17 -1.1
Unit V A nA V m S V pF pF pF
Test Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -13A VGS = -4.5V, ID = -10A VDS = -15V, ID = -8A VGS = 0V, IS = -2.1A VDS = -20V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V f = 1.0MHz VDS = -10V, VGS = -4.5V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
NEW PRODUCT
-0.5
Qg Qgs Qgd td(on) tr td(off) tf

nC
7.2 16.4 11.2 12.4 104.9 61.7
ns
5. Short duration pulse test used to minimize self-heating effect.
VGS = 10V
VGS= 4V
VDS = -5.0V
VGS= 3V
VGS = 2.5V
TA = 85C TA = 125C T A = 25C
VGS= 2V VGS=1.5V
T A = 150C
TA = -55C
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DMP3015LSS
Document number: DS31472 Rev. 4 - 2
2 of 5 www.diodes.com
October 2008
(c) Diodes Incorporated
DMP3015LSS
T A = 150 C T A = 125 C TA = 85C
VGS = -4.5V
TA = 25C
NEW PRODUCT
VGS = -10V
T A = -55C
VGS = -4.5V
10,000
f = 1MHz
RDSON, STATIC DRAIN-SOURCE ON-RESISTANCE ()
Ciss
C, CAPACITANCE (pF)
1,000
VGS = -4.5V ID = -5A
Coss
Crss
VGS = -10V ID = -10A
100 0
5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance
30
-VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 0V
ID = -250mA
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ID = -1mA
DMP3015LSS
Document number: DS31472 Rev. 4 - 2
3 of 5 www.diodes.com
October 2008
(c) Diodes Incorporated
DMP3015LSS
D = 0.7 D = 0.5 D = 0.3 D = 0.9 T A = 85C D = 0.1
NEW PRODUCT
D = 0.05 RJA (t) = r(t) * RJA RJA = 91C/W P(pk)
D = 0.02 D = 0.01 D = 0.005 D = Single Pulse
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
Ordering Information
Part Number DMP3015LSS-13
Notes:
(Note 6) Case SOP-8L Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8 5
Logo
P3015LS YY WW
Part no.
Xth week: 01~52 Year "08" =2008
1 4
Package Outline Dimensions
SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0 8 All Dimensions in mm
E1
E A1 L
0.254
GAUGE PLANE SEATING PLANE
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h
DETAIL A
7~9 45 A2 A A3
DETAIL A
e D
b
DMP3015LSS
Document number: DS31472 Rev. 4 - 2
4 of 5 www.diodes.com
October 2008
(c) Diodes Incorporated
DMP3015LSS Suggested Pad Layout
X
NEW PRODUCT
C1
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
C2 Y
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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DMP3015LSS
Document number: DS31472 Rev. 4 - 2
5 of 5 www.diodes.com
October 2008
(c) Diodes Incorporated


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Newark

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DMP3015LSS-13
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DMP3015LSSQ-13
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Diodes Incorporated Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R - Tape and Reel (Alt: DMP3015LSS-13) 250000: USD0.24738
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DMP3015LSS-13
DMP3015LSS-13
Diodes Incorporated Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R - Tape and Reel (Alt: DMP3015LSS-13) 250000: USD0.24738
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621-DMP3015LSSQ-13
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Verical

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Avnet Silica

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