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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package www..com *High voltage ,high speed APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT11 BUT11A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11 BUT11A BUT11 BUT11A CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 10 2 Tmb425 100 0.8 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tf Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Fall time Junction temperature Storage temperature Open base Open collector V V A A A W s THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS www..com BUT11 BUT11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT11A IC=2.5A; IB1=- IB2=0.5A For BUT11 IC=3A ;IB1=- IB2=0.6A 1.0 4.0 0.8 s s s Switching times inductive load ts tf Storage time Fall time For BUT11 IC=3A ;IB=0.6A For BUT11A IC=2.5A ;IB =0.5A 1.4 0.15 s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUT11 BUT11A Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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