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SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM Rating -20 -8.2 -6.6 -66 1.8 1.15 10 115 12 -55 to + 150 70 Unit V A @Ta= 25 @Ta= 70 PD W mW/ mJ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A *3 When mounted on 1 inch square copper board, t 10 sec www.kexin.com.cn 1 SMD Type KRF7663 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -7A, VGS = 0V*1 TJ = 25 , IF =-2.5A di/dt = -100A/ s*1 70 50 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -7.0A*1 VGS = -2.5V, ID = -5.1A*1 Min -20 Typ Max Unit V -0.01 0.02 0.04 -0.60 14.5 -1.0 -25 -100 100 30 5.0 7.0 11 100 125 172 2520 615 375 -1.8 45 7.5 10.5 -1.2 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -7.0A*1 VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70 V S A IGSS VGS = -12V VGS = 12V ID = -6.0A VDS = -10V VGS = -5V VDD = -10V ID = -6A RG = 6.2 RD=1.64 VGS = 0V VDS = -10V f = 1.0MHz nA nC ns pF A Body Diode) *2 -66 -1.2 105 75 V ns C *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn |
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