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| NTR3162P Power MOSFET Features -20 V, -3.6 A, Single P-Channel, SOT-23 * * * * Low RDS(on) at Low Gate Voltage -0.3 V Low Threshold Voltage Fast Switching Speed This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 70 mW @ -4.5 V -20 V 95 mW @ -2.5 V 120 mW @ -1.8 V ID MAX -2.2 A -1.9 A -1.7 A Applications * Battery Management * Load Switch in PWM * Battery Protection MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TA = 25C TA = 85C TA = 25C TA = 25C PD 1.25 -10.7 -55 to 150 -0.6 260 A C A C ID Symbol VDSS VGS Value -20 8 -2.2 -1.6 -3.6 0.48 W A Unit V V SIMPLIFIED SCHEMATIC Gate 1 Drain 3 2 (Top View) Source MARKING DIAGRAM/ PIN ASSIGNMENT 3 1 2 SOT-23 CASE 318 STYLE 21 3 Drain TRDMG G 1 1 Gate 2 Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Symbol RqJA RqJA Max 260 100 Unit C/W TRD = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTR3162PT1G NTR3162PT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 10000 / Tape & Reel 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 May, 2008 - Rev. 0 1 Publication Order Number: NTR3162P/D NTR3162P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH) /TJ RDS(on) VGS = -4.5 V, ID = -2.2 A VGS = -2.5 V, ID = -1.9 A VGS = -1.8 V, ID = -1.7 A VGS = -1.5 V, ID = -1.0 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, ID = -1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = -1.0 A, TJ = 25C VGS = -4.5 V, VDD = -10 V, ID = -3.6 A, RG = 6 W VGS = -4.5 V, VDS = -10 V, ID = -3.6 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V VDS = -5.0 V, ID = -2.2 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8.0 15 31 50 ns 940 140 100 10.3 0.5 1.4 2.7 6.0 W nC pF VGS = VDS, ID = -250 mA -0.3 -0.6 2.5 48 57 72 88 9.0 S 70 95 120 -1.0 V mV/C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = -250 mA ID = -250 mA, Reference to 25C VGS = 0 V, VDS = -16 V, TJ = 25C VGS = 0 V, VDS = -16 V, TJ = 85C VDS = 0 V, VGS = "8 V -20 14.5 -1.0 -5.0 $100 V mV/C mA nA Symbol Test Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.7 25 8.0 17 11 nC 1.2 V ns 2. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTR3162P P-CHANNEL TYPICAL CHARACTERISTICS 10 9.0 -ID, DRAIN CURRENT (A) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -1.2 V VGS = -5 V - -2.5 V -2.0 V -1.8 V -1.5 V TJ = 25C -ID, DRAIN CURRENT (A) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.5 125C 0.75 1 25C TJ = -55C VDS = -5 V 1.25 1.5 1.75 2 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 ID = -2.2 A TJ = 25C 0.30 TJ = 25C 0.25 0.20 0.15 0.10 0.05 0 VGS = -1.5 V VGS = -1.8 V VGS = -2.5 V VGS = -4.5 V 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8 9 10 -VGS, GATE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1000 ID = -2.2 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 100000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 10000 TJ = 125C 0 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTR3162P 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 -VGS, GATE-TO-SOURCE VOLTAGE (V) 5 4 3 Qgs 2 1 0 -VDS Qgd VDS = -10 A ID = -3.6 A TJ = 25C QT -VGS 12 10 8 6 4 2 0 11 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) Ciss VGS = 0 V TJ = 25C f = 1 MHz Crss 0 5 10 Coss 15 20 0 1 2 3 4 5 6 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (A) VDD = -10 V ID = -3.6 A VGS = -4.5 V 100 t, TIME (ns) Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 10 td(off) tf tr TJ = 150C 1.0 TJ = 125C TJ = -55C TJ = 25C 0.1 0.2 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.8 ID = -250 mA 0.7 0.6 -VGS(th) (V) 0.5 0.4 0.3 0.2 -50 80 70 60 POWER (W) 50 40 30 20 10 -25 0 25 50 75 100 125 150 Figure 10. Diode Forward Voltage vs. Current 0 0.0001 0.001 0.01 0.1 1 10 100 1000 TJ, JUNCTION TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTR3162P 100 VGS = -8 V SINGLE PULSE TC = 25C 100 ms 1 1 ms 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 dc 100 -ID, DRAIN CURRENT (A) 10 0.01 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.0001 SINGLE PULSE 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 14. Thermal Response http://onsemi.com 5 NTR3162P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTR3162P/D |
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