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| 2DB1713 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary NPN Type Available (2DD2678) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data * * * * * * * Case: SOT89-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) NEW PRODUCT COLLECTOR 2,4 3E C4 2C 1B TOP VIEW Pin Out Configuration 1 BASE 3 EMITTER Top View Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value -15 -12 -6 -6 -3 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W C/W W C/W C Electrical Characteristics @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min -15 -12 -6 270 Typ -120 40 180 Max -0.1 -0.1 -250 680 Unit V V V A A mV pF MHz Conditions IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -15V, IE = 0 VEB = -6V, IC = 0 IC = -1.5A, IB = -30mA VCE = -2V, IC = -500mA VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2DB1713 Document number: DS31634 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 (c) Diodes Incorporated 2DB1713 2.0 3.0 2.5 IB = -5mA -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.6 2.0 IB = -4mA 1.2 Note 4 1.5 IB = -3mA 0.8 1.0 IB = -2mA NEW PRODUCT 0.4 Note 3 0.5 IB = -1mA 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 10,000 VCE = -2V 1 IC/IB = 20 1,000 T A = 85C T A = 25C TA = -55C TA = 150C -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 0.1 T A = 150C T A = 85C TA = 25C TA = -55C 100 0.01 10 1 0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current IC/IB = 20 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 VCE = -2V 1.0 1.0 0.8 TA = -55C 0.8 TA = -55C 0.6 T A = 25C 0.6 T A = 25C T A = 85C TA = 150C 0.4 T A = 85C 0.4 0.2 TA = 150C 0.2 0 1 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 2DB1713 Document number: DS31634 Rev. 2 - 2 2 of 4 www.diodes.com December 2008 (c) Diodes Incorporated 2DB1713 1,000 f = 1MHz 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 100 100 Cibo 10 NEW PRODUCT C obo VCE = -2V f = 100MHz 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 1 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Ordering Information Part Number 2DB1713-13 Notes: (Note 6) Case SOT89-3L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW 1713 1713 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 Package Outline Dimensions D1 R0 .2 00 C E H B B1 8 (4 X ) L e A SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e -- -- 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D 2DB1713 Document number: DS31634 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 (c) Diodes Incorporated 2DB1713 Suggested Pad Layout X1 Y1 X3 Y3 X2 Y2 NEW PRODUCT Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DB1713 Document number: DS31634 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 (c) Diodes Incorporated |
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