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STD95N2LH5 STP95N2LH5, STU95N2LH5 N-channel 25 V, 0.0038 , 80 A, DPAK, IPAK, TO-220 STripFETTM V Power MOSFET Features Type STD95N2LH5 STP95N2LH5 STU95N2LH5 VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 < 0.0049 < 0.0049 ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 3 1 2 TO-220 Application Switching applications Figure 1. Internal schematic diagram Description This STripFETTMV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). Table 1. Device summary Marking 95N2LH5 95N2LH5 95N2LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD95N2LH5 STP95N2LH5 STU95N2LH5 April 2010 Doc ID 13834 Rev 5 1/17 www.st.com 17 Contents STD95N2LH5, STP95N2LH5, STU95N2LH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) ID IDM (2) Absolute maximum ratings Value Parameter DPAK/IPAK Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 80 67 320 70 0.47 165 -55 to 175 380 80 25 22 95 TO-220 V V A A A W W/C mJ C Unit PTOT (3) EAS Single pulse avalanche energy Operating junction temperature Storage temperature Tj Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25C, Id = 40 A, Vdd = 20 V Table 3. Symbol Rthj-case Rthj-amb Tj Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.14 100 275 Unit C/W C/W C Doc ID 13834 Rev 5 3/17 Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 A, VGS= 0 VDS = 25 V VDS = 25 V,Tc = 125C VGS = 22 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 40 A SMD version 1 0.0038 0.0045 0.0044 0.0049 0.005 0.006 0.006 0.007 Min. 25 1 10 100 Typ. Max. Unit V A A nA V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A VGS= 5 V, ID= 40 A SMD version VGS= 5 V, ID= 40 A Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Test conditions Min. Typ. 1817 420 67 13.4 6.7 4.1 3.5 3.2 nC Max. Unit pF pF pF nC nC nC nC VDS =25 V, f=1 MHz, VGS=0 VDD=13 V, ID = 80 A VGS =5 V Figure 18 VDD=13 V, ID = 80 A Figure 21 f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain - - - - RG Gate input resistance - 1.1 - 4/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=12.5 V, ID= 40 A, RG= 4.7 , VGS= 10 V Figure 17 VDD=12.5 V, ID= 40 A, RG= 4.7 , VGS= 10 V Figure 17 Min. Typ. 7 38 22 7 Max. Unit ns ns ns ns - - - - Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 35 A, VGS=0 ISD = 80 A, VDD= 20 V di/dt =100 A/s, Figure 19 Test conditions Min. 32.4 27.1 1.7 Typ. Max. 80 320 1.1 Unit A A V ns nC A VSD(2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 13834 Rev 5 5/17 Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK Figure 4. ID (A) Safe operating area for TO-220 AM04907v1 a is Figure 5. Thermal impedance for TO-220 O Li pe m ra ite tio dn by in m thi ax s a R re D S (o n) 100 100s 1ms 10ms 10 1 Tj=150C Tc=25C Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics 6/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 8. Normalized BVDSS vs temperature Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 13834 Rev 5 7/17 Electrical characteristics Figure 14. Source-drain diode forward characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 8/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Test circuits 3 Test circuits Figure 16. Unclamped inductive waveform Figure 15. Unclamped inductive load test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Switching time waveform switching and diode recovery times Doc ID 13834 Rev 5 9/17 Test circuits Figure 21. Gate charge waveform Id Vds Vgs STD95N2LH5, STP95N2LH5, STU95N2LH5 Vgs(th) Qgs1 Qgs2 Qgd 10/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13834 Rev 5 11/17 Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H Doc ID 13834 Rev 5 13/17 Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 Doc ID 13834 Rev 5 15/17 Revision history STD95N2LH5, STP95N2LH5, STU95N2LH5 6 Revision history Table 8. 29- Document revision history Revision 1 2 3 4 5 First release Modified Table 4.: Static VGS value has been changed on Table 2 and Table 5 Added device in TO-220 - Table 1: Device summary has been corrected - Section 4: Package mechanical data has been updated Changes Date 16-Oct-2007 20-Feb-2008 23-Sep-2008 20-Apr-2009 26-Apr-2010 16/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 13834 Rev 5 17/17 |
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