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Type IPP023N04N G IPB023N04N G OptiMOSTM3 Power-Transistor Features * MOSFET for ORing and Uninterruptible Power Supply * Qualified according to JEDEC1) for target applications * N-channel * Normal level * Ultra-low on-resistance R DS(on) * 100% Avalanche tested * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type IPB023N04N G IPP023N04N G Product Summary V DS R DS(on),max ID 40 2.3 90 V m A Package Marking PG-TO263-3 023N04N PG-TO220-3 023N04N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) Value 90 90 400 90 150 20 Unit A I D,pulse I AS E AS V GS T C=25 C T C=25 C I D=90 A, R GS=25 mJ V J-STD20 and JESD22 Rev. 1.2 page 1 2009-12-11 IPP023N04N G IPB023N04N G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 167 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=95 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance 5) Gate resistance Transconductance 2) 3) 4) - - 0.9 62 40 K/W 40 2 - 0.1 4 1 V A - 10 10 1.9 1.9 150 100 100 2.3 nA m S I GSS R DS(on) RG g fs V GS=20 V, V DS=0 V V GS=10 V, I D=90 A |V DS|>2|I D|R DS(on)max, I D=90 A 75 See figure 3 for more detailed information See figure 13 for more detailed information Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Measured from drain tab to source pin 5) Rev. 1.2 page 2 2009-12-11 IPP023N04N G IPB023N04N G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD V GS=0 V, I F=90 A, T j=25 C V R=20 V, I F=I S, di F/dt =400 A/s T C=25 C 0.93 90 400 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 10 V V DD=20 V, V GS=0 V V DD=20 V, I D=30 A, V GS=0 to 10 V 35 22 11 24 90 4.8 85 73 120 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=20 V, f =1 MHz 7300 2000 77 27 6.6 40 7.8 10000 pF 2700 ns Reverse recovery charge Q rr - 80 - nC 6) See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2009-12-11 IPP023N04N G IPB023N04N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 200 100 80 150 60 P tot [W] 100 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 50 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 10 s 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 0.2 100 s 102 DC 10-1 0.1 Z thJC [K/W] 0.05 0.02 0.01 I D [A] 1 ms 10 ms 101 10-2 single pulse 100 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.2 page 4 2009-12-11 IPP023N04N G IPB023N04N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 10 V 7V 5.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 4 6.5 V 300 3 6V 6.5 V R DS(on) [m] I D [A] 7V 200 6V 2 10 V 100 5.5 V 1 5V 0 0 1 2 3 0 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 400 8 Typ. forward transconductance g fs=f(I D); T j=25 C 250 200 300 150 200 g fs [S] 100 175 C I D [A] 100 50 25 C 0 0 1 2 3 4 5 6 7 0 0 40 80 120 160 200 V GS [V] I D [A] Rev. 1.2 page 5 2009-12-11 IPP023N04N G IPB023N04N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=90 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A 5 4 4 3 R DS(on) [m] 3 98 % V GS(th) [V] 100 140 180 2 2 typ 1 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 Coss 175 C, 98% 103 102 25 C C [pF] I F [A] 175 C 25 C, 98% 102 Crss 101 101 0 10 20 30 40 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.2 page 6 2009-12-11 IPP023N04N G IPB023N04N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 25 C 100 C 150 C 20 V 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 10 8V 32 V 8 10 V GS [V] 100 101 102 103 I AV [A] 6 4 2 1 10-1 0 0 20 40 60 80 100 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 45 V GS Qg 40 V BR(DSS) [V] 35 30 V g s(th) 25 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 1.2 page 7 2009-12-11 IPP023N04N G IPB023N04N G Package Outline PG-TO263-3 Footprint: Packaging: Rev. 1.2 page 8 2009-12-11 IPP023N04N G IPB023N04N G Package Outline PG-TO220-3 Rev. 1.2 page 9 2009-12-11 IPP023N04N G IPB023N04N G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 10 2009-12-11 |
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