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| 2N6990 Silicon NPN Transistor D a ta S h e e t Description Complement to the 2N6988 Applications * General purpose switching * 4 Transistor Array * NPN silicon transistor Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N6990J) * JANTX level (2N6990JX) * JANTXV level (2N6990JV) * JANS level (2N6990JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed 14 Lead Flat Pack Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/559 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Operating Junction Temperature Storage Temperature O TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT TJ TSTG Rating 50 75 6 800 1.0 5.71 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/C C C Copyright(c) 2003 Rev. D.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N6990 Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150C VEB = 6 Volts VEB = 4 Volts Min 50 10 10 10 10 50 Typ Max Units Volts A nA A A nA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 50 75 100 100 30 35 0.6 Typ Max 325 300 Units 1.2 2.0 0.3 1.0 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Transistor to Transistor Resistance Symbol |hFE| hFE COBO CIBO |RT-T| Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz |VT-T| = 500 Volts Min 2.5 50 8 25 1010 pF pF Typ Max 10 Units Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time tON tOFF 35 300 ns ns Copyright(c) 2003 Rev. D.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
Price & Availability of 2N6990
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