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STK20N75F3 N-channel 75 V, 0.0065 , 20 A, PolarPAK(R) STripFETTM Power MOSFET Features Type STK20N75F3 VDSS 75 V RDS(on) max < 0.0079 Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK(R) is a trademark of VISHAY Figure 1. PolarPAK(R) Application Switching applications Description This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. O bs let o Pr e du o (s) ct so Ob - te le Internal schematic diagram ro P uc d s) t( Bottom View Top View Device summary Marking 20753 Package PolarPAK(R) Packaging Tape and reel Order code STK20N75F3 June 2009 Doc ID 14849 Rev 2 1/15 www.st.com 15 Contents STK20N75F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 2/15 Doc ID 14849 Rev 2 STK20N75F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) ID IDM (2) PTOT (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 75 20 20 12.5 80 5.2 0.0416 600 -55 to 150 Unit V V A A A W EAS (3) Tj Tstg Single pulse avalanche energy Operating junction temperature Storage temperature 1. When mounted on FR-4 board of 1inch2, 2 oz Cu and 10 sec 2. Pulse width limited by package 3. Starting TJ = 25 C, ID = 20 A, VDD = 50 V Table 3. Symbol Rthj-amb(1) Rthj-c(2) Rthj-c(3) Thermal data Parameter Thermal resistance junction-amb Thermal resistance junction-case (top drain) Thermal resistance junction-case (source) 1. When mounted on FR-4 board of 1inch2, 2 oz Cu and 10sec 2. Steady state bs O let o 3. Measured at source pin when the device is mounted on FR-4 board in steady state Pr e du o ct (s) so Ob - te le ro P uc d s) t( C W/C mJ Typ. 20 0.8 2.2 Max. 24 1 2.7 Unit C/W C/W C/W Doc ID 14849 Rev 2 3/15 Electrical characteristics STK20N75F3 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VGS = 20V VDS= VGS, ID = 250 A VGS= 10 V, ID= 10 A 2 Min. 75 1 10 100 Typ. Max. Unit V A A nA V 0.0065 0.0079 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Gate input resistance bs O let o Table 6. Pr e tr od ct u (s) so Ob VGS =10 V (see Figure 14) VDS =25 V, f=1 MHz, VGS=0 te le ro P Min. - uc d Typ. 2480 446 41 40.4 11.6 9.9 s) t( - 4 Max. Unit pF pF pF nC nC nC VDD= 38 V, ID = 20 A - f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - 0.85 - Switching times Parameter Test conditions VDD= 37.5 V, ID= 10 A, RG=4.7 , VGS= 10 V (see Figure 13) VDD=37.5 V, ID= 10 A, RG=4.7 , VGS= 10 V (see Figure 13) Min. Typ. 15.6 16.2 Max. Unit ns ns Symbol td(on) Turn-on delay time Rise time - td(off) tf Turn-off delay time Fall time 37.8 4 - ns ns 4/15 Doc ID 14849 Rev 2 STK20N75F3 Electrical characteristics Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 20 A, VGS=0 ISD= 20 A, di/dt = 100 A/s, VDD=60 V, Tj=150C (see Figure 18) Test conditions Min. Typ. Max. 20 80 1.2 49.7 103.6 4.2 Unit A A V ns nC A - VSD(2) trr Qrr IRRM - - 1. Pulse width limited by package 2. Pulsed: pulse duration = 300s, duty cycle 1.5% bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Doc ID 14849 Rev 2 5/15 Electrical characteristics STK20N75F3 2.1 Figure 2. ID (A) 100 Electrical characteristics (curves) Safe operating area AM04908v1 Figure 3. Thermal impedance s ai are n) his DS(o t in x R ion ma y rat pe ed b O it Lim Tj=150C Tc=25C Sinlge pulse 10 1 10ms 100ms 1s 0.1 0.01 0.1 1 10 VDS(V) Figure 4. ID (A) 200 Output characteristics AM04909v1 Figure 5. ID (A) 250 200 Transfer characteristics VGS=10V 6V 150 100 5V 50 0 0 1 2 3 4 5 6 Figure 6. BVDSS (norm) 1.10 Normalized BVDSS vs temperature bs O let o 1.05 1.00 0.95 ro P e du (s) ct 7 so Ob 100 50 0 0 150 Pr te le 2 4 od VDS=4V uc s) t( AM04910v1 8 VDS(V) 6 8 10 VGS(V) Figure 7. RDS(on) () 7.0 6.9 6.8 6.7 6.6 6.5 6.4 6.3 6.2 6.1 0 Static drain-source on resistance AM04912v1 AM04911v1 0.90 -50 0 50 100 150 TJ(C) 5 10 15 20 ID(A) 6/15 Doc ID 14849 Rev 2 STK20N75F3 Figure 8. VGS (V) 12 10 8 4000 6 4 2 0 0 10 20 30 40 50 Qg(nC) 3000 Electrical characteristics Capacitance variations AM04914v1 Gate charge vs gate-source voltage Figure 9. AM04913v1 C (pF) 7000 6000 5000 VDD=37.5V ID=20A Ciss 2000 Crss 1000 Coss 0 0 10 20 30 40 50 60 70 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.2 AM04915v1 Figure 11. Normalized on resistance vs temperature RDS(on) (norm) 2.1 1.9 ID=10A VGS=10V 1.7 1.5 1.0 0.8 0.6 0.4 -50 0 50 100 150 Figure 12. Source-drain diode forward characteristics VSD (V) O bs let o 0.8 0.7 0.6 0.5 0.4 0 0.9 ro P e uc d (s) t TJ(C) so Ob 1.1 0.9 0.7 0.5 1.3 te le -50 0 ro P uc d s) t( AM00895v1 50 100 150 TJ(C) AM04917v1 TJ=-50C TJ=25C TJ=175C 5 10 15 20 ISD(A) Doc ID 14849 Rev 2 7/15 Test circuits STK20N75F3 3 Test circuits Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k D.U.T. VG AM01468v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F RG S Figure 17. Unclamped inductive waveform bs O VDD let o ID Pr e VD IDM du o (s) ct so Ob VDD te le VD ID ro P L D.U.T. uc d 2200 F s) t( AM01469v1 3.3 F VDD Vi Pw AM01471v1 AM01470v1 Figure 18. Switching time waveform ton tdon tr toff tdoff tf V(BR)DSS 90% 90% 10% 0 VDD 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/15 Doc ID 14849 Rev 2 STK20N75F3 Figure 19. Gate charge waveform Test circuits Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Doc ID 14849 Rev 2 9/15 Package mechanical data STK20N75F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 10/15 Doc ID 14849 Rev 2 STK20N75F3 Package mechanical data Table 8. Ref. PolarPAK(R) (option "L") mechanical data mm Min. Typ. 0.80 Max. 0.85 0.05 0.48 0.41 2.19 0.89 0.23 0.20 6 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.37 1.13 0.41 0.56 0.51 0.56 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 Min. 0.030 inch Typ. 0.031 Max. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 0.75 bs O let o Pr e M3 M4 P1 T1 T2 T3 T4 T5 < du o 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 4.30 (s) ct 4.50 3.58 0.20 3.64 0.76 Ob - 4.52 1.18 so Pr te le 0.018 0.012 0.018 0.166 0.043 0.054 0.009 0.169 0.135 0.009 0.002 od uc s) t( 0.238 0.209 0.199 0.022 0.020 0.022 0.178 0.046 0.248 0.016 0.172 0.044 4.70 3.73 0.177 0.141 0.185 0.147 0.25 4.10 0.95 0.006 0.137 0.022 0.047 0.154 0.008 0.143 0.030 0.010 0.161 0.037 0.18 0 10 0.36 12 0 0.007 10 0.014 12 Doc ID 14849 Rev 2 11/15 Package mechanical data STK20N75F3 Figure 20. PolarPAK(R) (option "L") drawings bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 12/15 Doc ID 14849 Rev 2 STK20N75F3 Figure 21. Recommended PAD layout Package mechanical data bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Doc ID 14849 Rev 2 13/15 Revision history STK20N75F3 5 Revision history Table 9. Date 01-Jul-2008 22-Jun-2009 Document revision history Revision 1 2 First release Document status promoted from preliminary data to datasheet. Changes bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 14/15 Doc ID 14849 Rev 2 STK20N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. bs O The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 14849 Rev 2 15/15 |
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