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| This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview FG654301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. Package Code SMini6-F3-B Name Pin 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = -4.0 V) High-speed switching Small size surface mounting package: SMini6-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) Marking Symbol: V7 Internal Connection (D1) 6 (G2) 5 (S2) 4 Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) FET1 FET2 Absolute Maximum Ratings Ta = 25C Parameter Drain-source surrender voltage FET1 Gate-source surrender voltage Drain current Peak drain current Drain-source surrender voltage FET2 Gate-source surrender voltage Drain current Peak drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSS ID IDP VDSS VGSS ID IDP PT Tch Tstg Rating 30 12 100 200 -30 12 -100 -200 150 150 -55 to +150 Unit V V mA mA V V mA mA mW C C 1 (S1) 2 (G1) 3 (D2) Publication date: January 2011 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Electrical Characteristics Ta = 25C3C FET1 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA VDS = 3 V, VGS = 0, f = 1 MHz Conditions ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VGS = 10 V, VDS = 0 ID = 1.0 mA, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3.0 V 20 0.5 1.0 3 2 55 12 7 3 100 100 Min 30 1.0 10 1.5 6 3 Typ Max Unit V mA mA V W mS pF pF pF ns ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 VGS = 0 V to 3 V VIN 50 S G D VOUT VIN 90% 10% 10% VOUT ton 90% toff FET2 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff VDD = -3 V VGS = 0 V to -3 V ID = -10 mA , , VDD = -3 V VGS = -3 V to 0 V ID = -10 mA , , VDS = -3 V, VGS = 0, f = 1 MHz Conditions ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VGS = 10 V, VDS = 0 ID = -1.0 mA, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V ID = -10 mA, VDS = -3.0 V 20 - 0.5 -1.0 7 4 40 12 7 3 100 100 Min -30 -1.0 10 -1.5 17 7 Typ Max Unit V mA mA V W mS pF pF pF ns ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = -3 V 10% ID = -10 mA VIN RL = 300 90% VOUT D VGS = 0 V to -3 V G 90% VIN VOUT 10% 50 S td(on) tr td(off) tf 2 Ver. AED This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Common characteristics chart PT Ta 200 150 125 100 75 50 0 FG654301_ PT-Ta Total power dissipation PT (mW) 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of FET1 -V FG654301(FET1)_ ID DS ID VDS 100 Ta = 25C VGS = 4.0 V 2.5 V FG654301(FET1)_ ID-VGS 102 ID VGS FG654301(FET1)_ RDS(on)-VGS RDS(on) VGS VDS = 3 V 102 80 10 Drain-source ON resistance RDS(on) () Ta = 25C ID = 0.01 A Drain current ID (mA) Drain current ID (mA) 60 2.1 V 40 1 10 Ta = 85C 10-1 25C 1 20 1.5 V 0 0 0.1 0.2 0.3 1.8 V 0.4 0.5 10-2 -30C 10-3 0 0.5 1.0 1.5 2.0 2.5 10-1 0 2 4 6 8 10 Drain-source voltage VDS (V) FG654301(FET1)_ RDS(on)-ID 102 Gate-source voltage VGS (V) Gate-source voltage VGS (V) RDS(on) ID Ta = 25C Drain-source ON resistance RDS(on) () 10 VGS = 2.5 V 4.0 V 1 10-1 10-1 1 10 102 Drain current ID (mA) Ver. AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 FG654301(FET1)_Ciss , Crss , Coss -VDS 25 Ciss , Crss , Coss VDS FG654301(FET1)_|Yfs|-ID 1 Yfs ID Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) Ta = 25C 20 15 Ciss 10 Coss Crss 5 0 Forward transfer admittance |Yfs | (S) Ta = 25C VDS = 3 V 10-1 10-2 0 5 10 15 20 10-3 1 10 102 103 Drain-source voltage VDS (V) Drain current ID (mA) Characteristics charts of FET2 -V FG654301(FET2)_ ID DS ID VDS -100 Ta = 25C VGS = -4.5 V -2.5 V -102 FG654301(FET2)_ ID-VGS ID VGS FG654301(FET2)_ RDS(on)-VGS RDS(on) VGS 103 -80 -10 Drain-source ON resistance RDS(on) () VDS = -3 V Ta = 25C ID = - 0.01 A Drain current ID (mA) Drain current ID (mA) -60 -1 Ta = 85C 102 -40 -10-1 25C 10 -20 -1.5 V -10-2 -30C 0 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 -10-3 0 - 0.5 -1.0 -1.5 -2.0 1 0 -2 -4 -6 -8 -10 Drain-source voltage VDS (V) FG654301(FET2)_ RDS(on)-ID Gate-source voltage VGS (V) Gate-source voltage VGS (V) RDS(on) ID 102 Ta = 25C Drain-source ON resistance RDS(on) () 10 VGS = -2.5 V -4.0 V 1 10-1 -10-1 -1 -10 -102 Drain current ID (mA) 4 Ver. AED This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 FG654301(FET2)_Ciss , Crss , Coss -VDS 25 Ciss , Crss , Coss VDS FG654301(FET2)_|Yfs|-ID Yfs ID Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) Ta = 25C 1 20 15 Ciss 10 Coss Crss 0 -5 -10 -15 -20 5 0 Forward transfer admittance |Yfs | (S) Ta = 25C VDS = -3 V 10-1 10-2 10-3 -1 -10 -1 -10 -102 Drain-source voltage VDS (V) Drain current ID (mA) Ver. AED 5 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 SMini6-F3-B Unit: mm 2.0 0.1 1.3 0.1 (0.65) 6 5 (0.65) 4 1.25 0.10 2.1 0.1 1 2 3 +0.05 0.20 0.05 7 (0.425) 0.13 -0.02 7 (0.15) 6 0 to 0.10 Ver. AED 0.7 0.1 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202 |
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