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| Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60 NON INSULATED TYPE TRIAC (TO-220 PACKAGE) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=4A) * High Commutation dv/dt General Description The Triac HTP4A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings Ta=25ae(c) Tstg Tj PGM VDRM IT RMS(c) Storage Temperature- - - - - - - - - - Operating Junction Temperature Peak Gate Power Dissipation- Repetitive Peak Off-State Voltage- R.M.S On-state Current Peak Gate Voltage - Peak Gate Current-Ta=66ae(c) ------------- -40~125ae -40~125ae 3W 600V 4.0A 7.0V 0.5A 30/33A VGM IGM - ------------------------ ITSM Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) - - - Electrical Characteristics Ta=25ae(c) Symbol IDRM Items Repetitive Peak Off-state Current Peak On-state Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.2 5.0 Min. Typ. Max. 1.0 Unit mA Conditions VD=VDRM,Single Phase, VTM I+GT1 I- GT1 I- GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c 1.6 20 20 20 1.5 1.5 1.5 V mA mA mA V V V V V/S Half Wave, TJ=125ae IT=6A, Inst. Measurement VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm TJ=125ae TJ=125ae (di/dt)c= ,VD=1/2VDRM ,VD=2/3VDRM -3A/ms IH Rth(j-c) 5.0 2.8 ae mA /W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60 Fig 2. On-State Voltage PERFORMANCE CURVES Fig 1. Gate Characteristics Gate Gate Current (mA) On-state Current [A] Voltage (V) On-state Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On State Current vs. Maximum Power Dissipation Junction Temperature [ae ] Fig 5. On State Current vs. Allowable Case Temperature Power Dissipation [W] RMS On-state current [A] Fig 6. Surge On-State Current Rating ( Non-Repetitive ) C] Surge On-state Current [A] Allowable Case Temp. [a RMS On-state Current [A] Time Cycles(c) Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60 Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature Transient Thermal Junction Temperature [ae ] Impedance [ae /W ] Time sec(c) Fig 9. Gate Trigger Characteristics Test Circuit 10| 10| 10| Test Proceduren Test Procedureo Test Procedureo |
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