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NJG1138HA8 900MHz Band LNA GaAs MMIC
! GENERAL DESCRIPTION The NJG1138HA8 is a low noise amplifier designed for band 5/6/8 UMTS cellular phone and cellular data modem. The NJG1138HA8 has two gain state which are high gain mode and low gain mode. The NJG1138HA8 features high gain, low noise figure and high IP3. An Ultra-small and thin USB6-A8 package is adopted. ! FEATURES "Low operating voltage "Low control voltage "Low current consumption "High gain "Low noise figure "Input power at 1dB gain compression point "High input IP3 "Small package size "Lead-free and halogen-free ! PIN CONFIGURATION
3
GND
! PACKAGE OUTLINE
NJG1138HA8
+2.8V typ. +1.8V typ. 2.3mA typ. @VCTL=1.8V 10A typ. @VCTL=0V 16.0dB typ. @VCTL=1.8V, fRF =942.5MHz 1.4dB typ. @VCTL=1.8V, fRF =942.5MHz -8.5dBm typ. @VCTL=1.8V, fRF =942.5MHz +16.0dBm typ. @VCTL=0V, fRF=942.5MHz 0dBm typ. @VCTL=1.8V, fRF =942.5MHz +14dBm typ. @VCTL=0V, fRF=942.5MHz USB6-A8 (Package size: 1.0mmx1.2mmx0.38mm typ.)
RFIN
RFOUT
4 13
2
Bias Circuit
GND VCTL
Logic Circuit
Pin Connection 1. VCTL 2. RFOUT 3. GND 4. RFIN 5. GND 6. NC (GND)
5
1
NC(GND)
6
! TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL H L LNA Mode High Gain Mode Low Gain Mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2009-10-01
-1-
NJG1138HA8
! ABSOLUTE MAXIMUM RATINGS
Ta=+25C, Zs=Zl=50
PARAMETERS Supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature
SYMBOL VDD VCTL PIN PD Topr Tstg
CONDITIONS
RATINGS 5.0 5.0
+15
UNITS V V dBm mW C C
on PCB board, Tjmax=150C
150 -40~+85 -55~+150
! ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Control voltage (High) Control voltage (Low) Operating current1 (High Gain Mode) Operating current2 (Low Gain Mode) Control current SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL VCTL terminal VCTL terminal RF OFF, VCTL=1.8V RFOFF, VCTL=0V RF OFF, VCTL=1.8V CONDITIONS
(General Conditions: VDD=2.8V, Ta=+25oC) MIN
2.5 1.36 0 -
TYP
2.8 1.8 0 2.3 10 5.5
MAX
3.6 3.6 0.3 4.0 45 8.5
UNITS V V V mA
A A
-2-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS 2 (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) PARAMETERS Small signal gain 1 Noise figure 1 Input power at 1dB gain compression point 1 3rd order Input Intercept Point 1 RF IN VSWR 1 RF OUT VSWR 1 SYMBOL Gain1 NF1 P-1dB(IN)1 IIP3_1 VSWRI 1 VSWRo1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm CONDITIONS
Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB) Exclude PCB and connector losses (input:0.07dB)
MIN
14.5 -16.0 -7.0 -
TYP
16.0 1.4 -8.5 0 1.8
MAX
17.5 1.7 2.3
UNITS dB dB dBm dBm -
2.2
2.7
! ELECTRICAL CHARACTERISTICS 3 (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) PARAMETERS Small signal gain 2 Noise figure 2 Input power at 1dB gain compression point 1 3rd order Input Intercept Point 2 RF IN VSWR 2 RF OUT VSWR 2 SYMBOL Gain2 NF2 P-1dB(IN)2 IIP3_2 VSWRI 2 VSWRo2 f1=fRF, f2=fRF+100kHz, Pin=-20dBm CONDITIONS
Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB) Exclude PCB and connector losses (input:0.07dB)
MIN
-4.5 +4.5 +2.0 -
TYP -3.0
3.0 +16.0 +14.0 1.4
MAX
-2.0 6.0 2.0 2.2
UNITS dB dB dBm dBm -
1.6
-3-
NJG1138HA8
! TERMINAL INFORMATION
No. 1 2 3 4 5 6
SYMBOL VCTL RFOUT GND RFIN GND NC (GND)
DESCRIPTION Gain control port. Inputting a logic-high, the LNA turn at high gain mode. Inputting a logic-low, the LNA turn at low gain mode. RF output terminal. Requires an external matching components. This terminal should be connected a DC blocking capacitor C1. Ground terminal. Connect to the PCB ground plane. RF input terminal. Requires an external matching components. Ground terminal. Connect to the PCB ground plane. No connected terminal. This terminal is not connected with internal circuit. Connect to the PCB ground plane.
Notes: Ground terminal (No.3 and 5) and NC terminal (No.6) should be connected with the PCB ground for good RF performance.
-4-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
Pout vs. Pin
(f=942.5MHz) 10 20
Gain, IDD vs. Pin
(f=942.5MHz) 10
5 15 0
Gain
8
Pout (dBm)
Gain (dB)
-5
-10
5
4
Pout
-15 0 -20 P-1dB(IN)=-7.7dBm -25 -40 -30 -20 -10 0 10 -5 -40
IDD
2
P-1dB(IN)=-7.7dBm 0 -30 -20 -10 0 10
Pin (dBm)
Pout, IM3 vs. Pin
(f1=942.5MHz, f2=f1+100kHz) 20
Pin (dBm) OIP3, IIP3 vs. frequency
(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm) 18 17 6 5 4
0
Pout
16
Pout, IM3 (dBm)
OIP3 (dBm)
-20
-40
14 13 12 11
2 1
-60
IM3
-80
IIP3
0 -1 -2 1000
IIP3=-0.4dBm -100 -40 -30 -20 -10 0 10
Pin (dBm)
10 900
920
940
960
980
frequency (MHz) k factor vs. frequency
(f=50MHz~20GHz)
NF, Gain vs. frequency
(f=800~1100MHz) 4 3.5 3 20 18
20
Gain
16 14 12
15
NF (dB)
2.5 2 1.5 1 0.5
(Exclude PCB, Connector Losses)
Gain (dB)
k factor
10
NF
10 8 6 4 1100
5
0 800
850
900
950
1000
1050
0 0 5 10 15 20
frequency (MHz)
frequency (GHz)
-5-
IIP3 (dBm)
15
OIP3
3
IDD (mA)
10
6
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
Gain, NF vs. VDD
(f=942.5MHz) 18 17 16 15 14 13 12 11 (Exclude PCB, Connector Losses) 10 2 2.5 3 3.5 4 0 4.5 -10 2 2.5 3 3.5 4 4.5 4 3.5 -2 -3 -4
P-1dB(IN) vs. VDD
(f=942.5MHz)
Gain (dB)
2.5 2
P-1dB(IN) (dBm)
Gain
3
-5 -6 -7 -8 -9
NF (dB)
NF
1.5 1 0.5
P-1dB(IN)
VDD (V) OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm) 19 18 17 5 4 3 4 3.5
VDD (V) VSWRi, VSWRo vs. VDD
(f=942.5MHz)
VSWRo
3
16 15 14 13 12 11 2
OIP3
IIP3 (dBm)
2 1 0 -1 -2 -3 4.5
VSWRi, VSWRo
OIP3 (dBm)
2.5 2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5
IIP3
VSWRi
2.5
3
3.5
4
VDD (V) IDD vs. VDD
(RF OFF) 4 3.5 3 2.5
VDD (V)
IDD (mA)
IDD
2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5
VDD (V)
-6-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , with application circuit)
Gain, NF vs. Temperature
(f=942.5MHz) 19 18 17 16 15 14 13 12 (Exclude PCB, Connector Losses) 11 -60 -40 -20 0 20 40 o 60 80 0 100 -16 -60 -40 -20 0 20 40 60 80 100 4 3.5 0 -2 -4
P-1dB(IN) vs. Temperature
(f=942.5MHz)
Gain
3 2.5 2 1.5 1 0.5
P-1dB(IN) (dBm)
P-1dB(IN)
-6 -8 -10 -12 -14
Gain (dB)
NF
NF (dB)
Temperature ( C) OIP3, IIP3 vs. Temperature
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm) 18 17 16 4 3 2 4 3.5
Temperature (oC) VSWRi, VSWRo vs. Temperature
(f=942.5MHz)
VSWRo
3
OIP3 (dBm)
OIP3
15 14 13 12 11 10 -60 0 -1
IIP3 (dBm)
1
VSWRi, VSWRo
2.5 2 1.5 1 0.5 0 -60
VSWRi
IIP3
-2 -3 -4 100
-40
-20
0
20
Temperature ( C) IDD vs. Temperature
(RF OFF) 4 3.5 3 2.5
40 o
60
80
-40
-20
0
20
40
60
80
100
Temperature (oC)
IDD (mA)
IDD
2 1.5 1 0.5 0 -60
-40
-20
0
20
Temperature ( C)
40 o
60
80
100
-7-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
-8-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
Pout vs. Pin
(f=942.5MHz) 20 -2
Gain, IDD vs. Pin
(f=942.5MHz) 240
Gain
10 -4 200
0
Pout (dBm)
-6
160
Gain (dB)
-10
-8
120
-20
-10 -30
80
Pout
-12 40 P-1dB(IN)=+16.1dBm 0 -30 -20 -10 0 10 20
-40 P-1dB(IN)=+16.1dBm -50 -40 -30 -20 -10 0 10 20
IDD
-14 -40
Pin (dBm)
Pout, IM3 vs. Pin
(f1=942.5MHz, f2=f1+100kHz) 20
Pin (dBm) OIP3, IIP3 vs. Pin
(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm) 16 24
0
14
OIP3
22
Pout, IM3 (dBm)
-20
-40
10
18
-60
8
16
IIP3
-80
IM3
IIP3=+16.7dBm -100 -40 -30 -20 -10 0 10 20
6
14
Pin (dBm)
4 900
920
940
960
980
12 1000
NF, Gain vs. frequency
(f=800~1100MHz) 10 -2
20
frequency (MHz) k factor vs. frequency
(f=50MHz~20GHz)
8
Gain
-4
15
k factor
6
-6
Gain (dB)
NF (dB)
10
4
NF
-8
2
(Exclude PCB, Connector Losses)
-10
5
0 800
850
900
950
1000
1050
-12 1100
0 0 5 10 15 20
frequency (MHz)
frequency (GHz)
-9-
IIP3 (dBm)
Pout
OIP3 (dBm)
12
20
IDD (uA)
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
Gain, NF vs. VDD
(f=942.5MHz) 2 1 0 -1 -2 -3 6 5 20 19 18
P-1dB(IN) vs. VDD
(f=942.5MHz)
NF
4 3
P-1dB(IN) (dBm)
Gain (dB)
17
NF (dB)
P-1dB(IN)
16 15 14 13 12 2 2.5 3 3.5 4 4.5
2 1
Gain
-4 -5 (Exclude PCB, Connector Losses) -6 2 2.5 3 3.5 4 -2 4.5 0 -1
VDD (V) OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm) 24 22 20 20 18 4 3.5 3
VDD (V) VSWRi, VSWRo vs. VDD
(f=942.5MHz)
VSWRi, VSWRo
IIP3
16
VSWRo
OIP3 (dBm)
18 16
IIP3 (dBm)
14 12
2.5 2 1.5
OIP3
14 12 10 8 2 2.5 3 3.5 4 10 8 6 4 4.5
VSWRi
1 0.5 0 2 2.5 3 3.5 4 4.5
VDD (V) IDD vs. VDD
(RF OFF) 18 16 14 12
VDD (V)
IDD (uA)
10 8 6 4 2 2
IDD
2.5
3
3.5
4
4.5
VDD (V)
- 10 -
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , with application circuit)
Gain, NF vs. Temperature
(f=942.5MHz) -1 -2 -3 -4 -5 -6 -7 -8 (Exclude PCB, Connector Losses) -9 -60 -40 -20 0 20 40 o 60 80 1 100 6 -60 -40 -20 0 20 40 60 80 100 9 8 22 20 18
P-1dB(IN) vs. Temperature
(f=942.5MHz)
P-1dB(IN) (dBm)
Gain
7 6
Gain (dB)
16 14 12 10 8
P-1dB(IN)
5 4 3 2
NF
NF (dB)
Temperature ( C) OIP3, IIP3 vs. Temperature
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm) 24 22 20 20 18 16 4 3.5 3
Temperature (oC) VSWRi, VSWRo vs. Temperature
(f=942.5MHz)
VSWRo
VSWRi, VSWRo
OIP3 (dBm)
18 16 14 12 10 8 -60
IIP3
IIP3 (dBm)
14 12
2.5 2 1.5
OIP3
10 8 6 4 100
VSWRi
1 0.5 0 -60
-40
-20
0
20
1
Temperature ( C) IDD vs. Temperature
(RF OFF) 18 16 14 12
40 o
60
80
-40
-20
0
20
Temperature ( C)
40 o
60
80
100
IDD (uA)
10 8 6 4 2 -60
IDD
-40
-20
0
20
40
60
80
100
Temperature (oC)
- 11 -
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
- 12 -
NJG1138HA8
! APPLICATION CIRCUIT (Top View)
3 GND
RFIN
L2 8.2nH
RFIN 13 4
RFOUT 2 L3 10nH Bias Circuit Logic Circuit C2 0.01uF VCTL 1 VCTL
C1 2pF
RF OUT
L1 12nH
VDD
GND 5
NC(GND)
6 1Pin Index
! TEST PCB LAYOUT
(Top View)
Parts ID L1, L2
VDD
C2 RF IN L2 L1 L3 C1 RF OUT
Comments Murata LQP03T Series TDK MLK0603 Series Murata GRM03 Series
L3 C1, C2
PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm VCTL
- 13 -
NJG1138HA8
! PACKAGE OUTLINE (USB6-A8)
0.380.06
+0.012 0.038-0.009
S
0.03
S
TERMINAL TREAT Substrate Molding material UNIT WEIGHT
:Au :Glass epoxy :Epoxy resin :mm :1.1mg
0.2 (MIN0.15) 6 5 1.20.05
0.20.04 C0.1 R0.05 1 0.10.05
Photo resist coating
0.8
0.4
0.6
4 3 0.4 1.00.05
2
0.20.07
0.20.04
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
- 14 -

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NJG1138HA8-TE1 2129-NJG1138HA8-TE1-ND	Nisshinbo Micro Devices	IC	3000: USD1.0908	0

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NJG1138HA8-TE1 513-NJG1138HA8	Nisshinbo Micro Devices	RF Amplifier 900MHz Band LNA GaAs MMIC	3000: USD1.03	0

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NJG1138HA8-TE1	Nisshinbo Micro Devices		3000: USD0.943 2250: USD0.963 1500: USD1.216 750: USD1.976	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NJG1138HA8TE1	New Japan Radio Co Ltd			3000

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NJG1138HA8(TE1)	New Japan Radio Co Ltd		1343: USD0.5215 269: USD0.596 1: USD1.49	2144

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