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IDB06S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery/ No forward recovery * No temperature influence on the switching behavior * High surge current capability * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 15 6 V nC A
D2PAK
thinQ! 2G Diode designed for fast switching applications like: * CCM PFC * Motor Drives Type IDB06S60C Package D2PAK Marking D06S60C Pin 2 C Pin 3 A
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 C f =50 Hz T C=25 C, t p=10 ms T j=150 C, T C=100 C, D =0.1 T C=25 C, t p=10 s T C=25 C, t p=10 ms Value 6 9 46 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature I F,RM I F,max i 2dt V RRM dv/ dt P tot T j, T stg
24 210 10 600 A2s V V/ns W C
VR=0...480V T C=25 C
50 52 -55 ... 175
Rev. 2.1
page 1
2009-01-07
IDB06S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 2.9 62 K/W Values typ. max. Unit
-
35
-
Soldering temperature, reflowsoldering @ 10sec
T sold
-
-
260
C
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.08 mA I F=6 A, T j=25 C I F=6 A, T j=150 C Reverse current IR V R=600 V, T j=25 C 600 1.5 1.7 0.7 1.7 2.1 80 A V
V R=600 V, T j=150 C AC characteristics Total capacitive charge Switching time4) Total capacitance Qc tc C V R=400 V, I FI F,max, di F/dt =200 A/s, T j=150 C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz
1) 2) 3)
-
3
800
-
15 280 35 35
<10 -
nC ns pF
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms at 5mA.
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. PCB is vertikal with out blown air.
t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Only capacitive charge occuring, guaranteed by design. Rev. 2.1 page 2
5)
4)
2009-01-07
IDB06S60C
1 Power dissipation P tot=f(T C) 2 Diode forward current I F=f(T C); T j175 C
60
16
14 50 12 40
10
P tot [W]
I F [A]
30
8
6 20 4 10
2
0 25 50 75 100 125 150 175 200
0 25 50 75 100 125 150 175
T C [C]
T C [C]
3 Typ. forward characteristic I F=f(V F); t p=400 s parameter: T j
18
100 C 175 C
4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 s; parameter Tj
70
175 C
16
25 C 150 C
60
-55 C
14 50 12 10 8 6 20 4 2
-55 C 150 C
40
25 C
I F [A]
I F [A]
30
100 C
10
0 0 1 2 3 4
0 0 2 4 6 8
V F [V]
V F [V]
Rev. 2.1
page 3
2009-01-07
IDB06S60C
5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 C, parameter: D =t p/T
30
0.1 1
6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j
101
25
0.2
100
20
0.5
P F(AV) [W]
I R [A]
15
10-1
175 C
10 10-2 5
-55 C 150 C
100 C
25 C
0 0 5 10 15
10
-3
100
200
300
400
500
600
I F(AV) [A]
V R [V]
7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 C, f =1 MHz
400
0.5
300
100
Z thJC [K/W]
0.2 0.1 0.05 0.02
C [pF]
10-4 10-3 10-2 10-1
200
10-1
0.01 single pulse
100
10-2 10-5
0 10-1 100 101 102 103
t P [s]
V R [V]
Rev. 2.1
page 4
2009-01-07
IDB06S60C
9 Typ. C stored energy E C=f(V R) 10 Typ. capacitance charge vs. current slope Q C=f(di F/dt )5); T j=150 C; I FI F,max
8
20
7
6
15
5
E c [C]
4
Q c [nC]
0 100 200 300 400 500 600
10
3
2
5
1
0
0 100 400 700 1000
V R [V]
di F/dt [A/s]
Rev. 2.1
page 5
2009-01-07
IDB06S60C
PG-TO220-3-45 (D2Pak): Outline
Dimensions in mm/inches Rev. 2.1 page 6 2009-01-07
IDB06S60C
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1
page 7
2009-01-07

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