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SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230L-HF (RoHS Device) Io = 200 mA VR = 30 Volts 0503(1308) 0.053(1.35) 0.045(1.15) Features Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.016(0.40) Typ. 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) IFSM TSTG Tj -40 1 +125 +125 A O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) O Parameter Forward voltage Reverse current IF = 200 mA VR = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.5 30 V uA REV:A QW-G1046 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER0230L-HF) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics 100 Reverse current ( A ) Forward current (mA ) 100u 75 C O 10u 25 C O 10 C 1u 5 12 O C C O 25 1 75 O -25 O C 100n -25 C O 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals (PF) 100 Fig.4 - Current derating curve Average forward current(%) f = 1 MHz Ta = 25 C 100 80 10 60 40 20 1 0 5 10 15 20 25 30 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map 450 Ta=25 C IF=200mA n=30pcs O Fig. 6 - IR Dispersion map 50 45 Ta=25 C VR=10V n=30pcs O Fig. 7 - CT Dispersion map 30 29 Ta=25 C F=1MHz VR=0V n=10pcs O 35 30 25 20 15 10 5 AVG:4.1816uA Capacitance between terminals(pF) Forward voltage (mV) Reverse current (uA) 440 40 28 27 26 25 24 23 22 21 20 AVG:22.8pF 430 420 410 AVG:421.28mV 400 0 REV:A QW-G1046 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 0.90 0.10 0.035 0.004 B 1.46 0.10 0.057 0.004 C 0.80 0.10 0.031 0.004 d 1.55 0.05 0.061 0.002 D 178 1 7.008 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 0.20 0.512 0.008 ER/0503 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.10 0.079 0.004 T 0.22 0.05 0.008 0.002 W 8.00 0.20 0.315 0.008 W1 13.5 MAX. 0.531 MAX. ER/0503 (mm) (inch) REV:A QW-G1046 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number CDBER0230L-HF Marking Code BA BA Suggested PAD Layout ER/0503 SIZE (mm) A B C D E 0.85 0.55 0.85 1.40 0.30 (inch) 0.033 0.022 0.033 C D A E 0.055 B 0.118 Standard Package Qty per Reel Case Type (Pcs) ER/0503 4000 Reel Size (inch) 7 REV:A QW-G1046 Page 4 Comchip Technology CO., LTD. |
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