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| 1N119WS SILICON EPITAXIAL PLANAR DIODE APPLICATIONS High speed switching PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Non-repetitive Peak Forward Current (t = 1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM TJ Tstg Value 85 80 100 300 4 125 - 55 to + 125 Unit V V mA mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 50 Symbol VF Max. 0.8 1.2 0.1 2 3 Unit V IR CT trr A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/04/2009 1N119WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/04/2009 1N119WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/04/2009 |
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