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4V Drive Nch+Pch MOSFET SH8M3 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M3 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) 2 2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature 1 Pw10s, Duty cycle1% 2 MOUNTED ON A CERAMIC BOARD. 1 1 Symbol VDSS VGSS ID IDP1 IS ISP 1 PD 2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Pchannel Nchannel 30 -30 20 20 4.5 5.0 18 20 1.6 -1.6 20 -18 2 150 -55 to +150 Unit V V A A A A W C C (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance Parameter Channel to ambient MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-a) Limits 62.5 Unit C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.12 - Rev.A SH8M3 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 1.0 - - - 3.0 - - - - - - - - - - Typ. - - - - 36 52 58 - 230 80 50 6 8 22 5 3.9 1.1 1.4 Max. 10 - 1 2.5 51 73 82 - - - - - - - - - - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Data Sheet Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5.0A, VGS=10V ID=5.0A, VGS=4.5V ID=5.0A, VGS=4V ID=5.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6.0 RG=10 VDD 15V VGS=5V ID=5.0A RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.12 - Rev.A SH8M3 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 Zero gate voltage drain current IDSS - VGS (th) -1.0 Gate threshold voltage - Static drain-source on-state RDS (on) - resistance - Yfs 3.5 Forward transfer admittance Ciss - Input capacitance - Coss Output capacitance Crss - Reverse transfer capacitance - td (on) Turn-on delay time - tr Rise time td (off) - Turn-off delay time tf - Fall time - Qg Total gate charge Qgs - Gate-source charge - Qgd Gate-drain charge Pulsed Data Sheet Typ. - - - - 40 57 65 - 850 190 120 10 25 60 25 8.5 2.5 3.0 Max. 10 - -1 -2.5 56 80 90 - - - - - - - - - - - Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= 20V, VDS=0V ID= -1mA, VGS=0V VDS=-30V, VGS=0V VDS= -10V, ID= -1mA ID= -4.5A, VGS= -10V ID= -2.5A, VGS= -4.5V ID= -2.5A, VGS= -4.0V ID= -2.5A, VDS= -10V VDS= -10V VGS=0V f=1MHz ID= -2.5A, VDD -15V VGS= -10V RL=6.0 RG=10 VDD -15V VGS= -5V ID= -4.5A Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -1.6A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.12 - Rev.A SH8M3 N-ch Electrical characteristic curves 1000 Data Sheet 1000 tf Ciss 100 GATE-SOURCE VOLTAGE : VGS (V) 10 Ta=25C f=1MHz VGS=0V 10000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25C VDD=15V VGS=10V RG=10 Pulsed 10 Ta=25C 9 VDD=15V ID=5A 8 RG=10 Pulsed 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 100 td (off) Coss Crss 10 tr td (on) 10 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 VDS=10V Pulsed 300 Ta=25C Pulsed 250 200 150 100 50 0 10 VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C SOURCE CURRENT : Is (A) DRAIN CURRENT : ID (A) 0.1 ID=5A ID=2.5A 1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) Ta=125C Ta=75C Ta=25C Ta= -25C VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 1000 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4V Pulsed 100 100 100 10 10 10 1 0.1 1 10 1 0.1 1 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.12 - Rev.A SH8M3 P-ch Electrical characteristic curves 10000 Data Sheet GATE-SOURCE VOLTAGE : -VGS (V) Ta=25C f=1MHz VGS=0V 10000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1000 Ta=25C VDD= -15V VGS= -10V RG=10 Pulsed 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 Ta=25C VDD= -15V ID= -4.5A RG=10 Pulsed Ciss tf 100 td (off) 100 Coss Crss 10 td (on) tr 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 8 9 10 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics VDS= -10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 200 10 SOURCE CURRENT : -IS (A) Ta=25C Pulsed 150 VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C DRAIN CURRENT : -ID (A) 1 ID=-4.5A ID=-2.0A 1 0.1 100 0.1 0.01 50 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 VGS= -10V Pulsed 1000 VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 VGS= -4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 Ta=125C Ta=75C Ta=25C Ta= -25C 100 100 10 0.1 1 10 10 0.1 1 10 10 0.1 1 10 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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