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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High collector-emitter voltage *Low collector saturation voltage APPLICATIONS *Designed for medium to high voltage inverters, converters, regulators and switching circuits. PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ410 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 5 5 10 2 100 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.75 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=100V; VEB=-1.5V;TC=125 VCE=200V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=2.5A ; VCE=5V IC=0.2A ; VCE=10V;f=1.0MHz 30 10 2.5 MIN 200 MJ410 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICEX ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.8 1.2 0.5 0.25 5.0 90 V V mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ410 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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