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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHT870PT CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SC-59) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) 1.7~2.1 0.3~0.51 CONSTRUCTION * N-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 D CIRCUIT 1G S 3 0.3~0.6 2.1~2.95 0~0.1 2 TA = 25C unless otherwise noted Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter CHT870PT Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) 20 40 250 190 320 210 -55 to 150 300 TA= 25C TA= 70C TA= 25C TA= 70C ID PD Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation mA mW mW C C TJ,TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 400 C/W 2002-7 RATING CHARACTERISTIC CURVES ( CHT870PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 100A VDS = 60 V, VGS = 0 V TC=125C VGS = 15 V, VDS = 0 V VGS = -15 V, VDS = 0 V 60 80 1 0.5 10 -10 V A mA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) VDS(ON) ID(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 A VGS = 4.0 V, ID = 100 mA 1 2.0 2.0 2.5 0.6 0.09 3.0 5.0 4.0 3.75 1.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA Drain-Source On-Voltage VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA On-State Drain Current VGS = 10 V, VDS = 7.5VDS(on) VGS = 4.5V, VDS = 10VDS(on) Forward Transconductance VDS = 15 V DS(on), ID = 200 m A 800 500 100 V 1800 700 mA mS DYNAMIC CHARACTERISTICS Qg Qgs Qgd Ciss Coss Crss ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 30 V, VGS = 10 V, I D = 250 mA 0.6 0.06 0.06 1.0 25 5 50 25 5 20 nC VDS = 25 V, VGS = 0 V, f = 1.0 MHz 25 6 1.2 pF VDD = 30 V, RL = 200 , ID = 100 mA, VGS = 10 V, RGEN = 10 VDD = 30 V, RL = 200 , ID = 100 mA, VGS = 10 V, RGEN = 10 7.5 6 7.5 3 nS Turn-Off Time 20 nS Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. RATING CHARACTERISTIC CURVES ( CHT870PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 2 .5 6 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current V GS =4.0V 4 .5 VGS = 10V I D , DRAIN-SOURCE CURRENT (A) 2 9.0 8.0 7.0 6.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 5 .0 6 .0 1 .5 4 7 .0 3 1 5.0 8 .0 9 .0 10 0 .5 4.0 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 2 0 1 0 0 .4 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 3. On-Resistance Variation with Temperature 6.0 Figure 4. On-Resistance Variation with Drain Current and Temperature 6 V GS = 10V DRAIN-SOURCE ON-RESISTANCE V GS = 10V DRAIN-SOURCE ON-RESISTANCE 5 5.0 I D = 250m A R DS(on) , NORMALIZED R DS(ON) , NORMALIZED TJ = 1 2 5 C 4 4.0 3.0 3 25C 2 2.0 -55C 1 1.0 0 -5 0 -2 5 0 25 50 75 100 T , JUNCTION T EMPERATURE (C) J 125 150 0 0 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 5. Transfer Characteristics 2 1 .1 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE Figure 6. Gate Threshold Variation with Temperature V DS = VGS I D = 1 mA VDS = 10V 1.6 ID , DRAIN CURRENT (A) T J = -55C 25C 125C 1 .0 5 1 1.2 0 .9 5 0.8 0 .9 0.4 0 .8 5 0 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 RATING CHARACTERISTIC CURVES ( CHT870PT ) Typical Electrical Characteristics (continued) Figure 7. Breakdown Voltage Variation with Temperature 1.1 Figure 8. Body Diode Forward Voltage Variation with Drain Current 2 1 DRAIN-SOURCE BREAKDO WN VOLTAGE I D = 250A IS , REVERSE DRAIN CURRENT (A) 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 V GS = 0 V BV DSS , NORMALIZED 0 .5 TJ = 1 2 5 C 0 .1 0 .0 5 25C -5 5 C 0 .0 1 0 .0 0 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 0 .0 0 1 0 .2 0 .4 V SD 0 .6 0 .8 1 1 .2 1 .4 , BODY DIODE FORWARD VOLTAGE (V) Figure 9. Capacitance Characteristics 60 1.0 Figure 10. Gate Charge Characteristics C iss 20 VGS , GATE-SOURCE VOLTAGE (V) 40 V DS = 3 0 V .8 CAPACITANCE (pF) 10 .6 C oss 5 .4 2 f = 1 MH z V GS = 0V C rss 30 50 .2 ID = 2 5 0 m A 1 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 0 0 0 .1 0 .2 0 .3 Q g , GATE CHARGE (nC) 0 .4 0.5 Figure 11. Figure 12. Switching Waveforms VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width |
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