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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUJ403A DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1200 550 7 6 10 3 5 100 150 -65~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0, L= 25mH IC= 2A; IB= 0.4A B BUJ403A MIN 550 TYP. MAX UNIT V 1.0 1.5 1 2 0.1 0.1 13 20 13 15.5 47 25 V V mA mA mA IC= 2A; IB= 0.4A B VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125 VCE= 550V; IB= 0 VEB= 7V; IC= 0 IC= 1mA ; VCE= 5V IC= 0.5A ; VCE= 5V IC= 2A ; VCE= 5V IC= 3A ; VCE= 5V Switching Times ;Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A; RL= 75; VBB2= 4V 0.5 3.0 0.3 s s s isc Websitewww.iscsemi.cn |
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