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 DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAT854W series Schottky barrier (double) diodes
Product data sheet 2001 Feb 27
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES * Very low forward voltage * Very low reverse current * Guard ring protected * Very small SMD plastic package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes * Low power consumption applications (e.g. hand-held applications). DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. MARKING PINNING PIN BAT854W 1 2 3 BAT854AW 1 2 3 BAT854CW 1 2 3 BAT854SW 1 2 3 a1 k2 k1, a2 a1 a2 k1, k2 Fig.3 k1 k2 a1,a2 a n.c. k Fig.2 SYMBOL
BAT854W series
3 1 2 n.c.
MLC357
BAT854W single diode configuration (symbol).
3 1 2
MLC360
BAT854AW diode configuration (symbol).
3 1 2
MLC359
TYPE NUMBER BAT854W BAT854AW BAT854CW BAT854SW
MARKING CODE 81 82 83 84
handbook, 2 columns
3
Fig.4
BAT854CW diode configuration (symbol).
1 Top view
2
MBC870
3 1 2
MLC358
Fig.1
Simplified outline SOT323 and pin configuration.
Fig.5
BAT854SW diode configuration (symbol).
2001 Feb 27
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 t = 8.3 ms half sinewave; JEDEC method - - - - -65 - -65 PARAMETER CONDITIONS
BAT854W series
MIN.
MAX.
UNIT
40 200 300 1 +150 150 +150
V mA mA A C C C
ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER CONDITIONS VALUE 625 UNIT K/W continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.7 VR = 1 V; f = 1 MHz; see Fig.8 200 260 340 - - - - - - - 420 550 0.5 20 mV mV mV mV mV A pF PARAMETER CONDITIONS TYP. MAX. UNIT
thermal resistance from junction to ambient note 1
2001 Feb 27
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MLD546
BAT854W series
103 handbook, halfpage IR (A) 102
(2) (1)
MLD547
10
10
(1)
(2)
(3)
1
1
(3)
10-1
0
0.4
0.8
VF (V)
1.2
10-1
0
10
20
30
VR (V)
40
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.6
Forward current as a function of forward voltage; typical values.
Fig.7
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
20 Cd 16
MLD548
(pF)
12
8
4
0 0 10 20 30 VR (V) 40
f = 1 MHz; Tamb = 25 C.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
2001 Feb 27
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
PACKAGE OUTLINE
BAT854W series
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2001 Feb 27
5
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
BAT854W series
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2001 Feb 27
6
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Feb 27 Document order number: 9397 750 07935


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Newark

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BAT854AW,115
84Y9590
Nexperia Schottky Diode, 40V, 0.2A, Sot-323; Diode Configuration:Common Anode; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(Av):200Ma; Forward Voltage Vf Max:550Mv; Forward Surge Current Ifsm Max:1A; Operating Temperature Rohs Compliant: Yes |Nexperia BAT854AW,115 1000: USD0.094
500: USD0.116
250: USD0.134
100: USD0.144
50: USD0.182
25: USD0.222
10: USD0.26
1: USD0.426
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4385
BAT854AW-QX
25AK0210
Nexperia Small Signal Schottky Diode, 40V/Sot-323 Rohs Compliant: Yes |Nexperia BAT854AW-QX 1: USD0.465
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DigiKey

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BAT854AW,115
1727-BAT854AW,115TR-ND
Nexperia DIODE ARR SCHOT 40V 200MA SOT323 150000: USD0.06523
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1727-BAT854AW,115CT-ND
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500: USD0.13142
100: USD0.1483
10: USD0.294
1: USD0.41
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BAT854AW-QX
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1727-BAT854AW-QXDKR-ND
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1727-BAT854AW,115DKR-ND
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Avnet Americas

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BAT854AW115
BAT854AW,115
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Mouser Electronics

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BAT854AW,115
771-BAT854AW-T/R
Nexperia Schottky Diodes & Rectifiers BAT854AW/SOT323/SC-70 1: USD0.3
10: USD0.203
100: USD0.103
500: USD0.097
1000: USD0.083
3000: USD0.06
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771-BAT854AW-QX
Nexperia Schottky Diodes & Rectifiers BAT854AW-Q/SOT323/SC-70 1: USD0.44
10: USD0.309
100: USD0.156
1000: USD0.095
3000: USD0.079
9000: USD0.068
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1417

Arrow Electronics

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BAT854AW,115
V72:2272_06513067
Nexperia Diode Schottky 0.2A 3-Pin SC-70 T/R 6000: USD0.0523
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1828: USD0.0547
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9393
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V36:1790_06513067
Nexperia Diode Schottky 0.2A 3-Pin SC-70 T/R 45000: USD0.0461
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9000: USD0.0476
6000: USD0.0498
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A03:0893_00682871
Nexperia Diode Schottky 0.2A 3-Pin SC-70 T/R 150000: USD0.0404
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Quest Components

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Rochester Electronics

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BAT854AW,115
Nexperia BAT854AW - Rectifier Diode, Schottky, 2 Element, 0.2A, 40V, SC-70 1000: USD0.043
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TTI

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BAT854AW,115
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TME

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BAT854AW-QX
BAT854AW-QX
Nexperia Diode: Schottky rectifying 30000: USD0.0448
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RFQ
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BAT854AW,115
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Nexperia Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT323; reel,tape 3000: USD0.0508
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Avnet Silica

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BAT854AW-QX
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New Advantage Corporation

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BAT854AW,115
Nexperia 3000: USD0.0669
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Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
BAT854AW
MFG UPON REQUEST RFQ
2643
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MFG UPON REQUEST RFQ
11652061
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