 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP41 DESCRIPTION *High Collector Current-IC= 6A *Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A *High Switching Speed *Complement to Type BUP40 B APPLICATIONS *For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 60 V 50 V 6 V 6 A 10 W 150 UNIT .cn mi e IC Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUP41 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 1.4 V A ICBO Collector Cutoff Current VCB= 40V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 A hFE-1 DC Current Gain IC= 1A; VCE= 2V 100 500 hFE-2 DC Current Gain IC= 3A; VCE= 2V fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w IC= 1A; VCE= 5V IE= 0; VCB= 10V .cn mi e 40 120 MHz 25 pF isc Websitewww.iscsemi.cn 2 |
Price & Availability of BUP41
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |