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APT43GA90B APT43GA90S 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. (R) (B) TO -2 47 D3PAK C G E (S) G C E Single die IGBT FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 1 Ratings 900 78 43 129 30 337 129A @ 900V -55 to 150 300 Unit V A V W C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 25A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 900 Typ 2.5 2.2 4.5 Max 3.1 6 250 1000 100 Unit V VGE =VCE , IC = 1mA A nA 052-6333 Rev C 7 - 2009 VGS = 30V Thermal and Mechanical Characteristics Symbol RJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ 5.9 Max 0.37 - Unit C/W g in*lbf 10 Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg2 Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eoff5 td(on tr td(off) tf Eon1 Eoff5 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 25A TJ = 150C, RG = 4.7, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 25A RG = 4.73 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 25A RG = 4.73 TJ = +125C 129 12 16 82 57 875 425 12 16 117 129 1660 1000 APT43GA90B_S Min Typ 2465 227 34 116 18 44 nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit A ns J ns J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. See Mil-Std-750 Method 3471 3 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6333 Rev C 7 - 2009 Typical Performance Curves 40 V GE APT43GA90B_S 300 15V IC, COLLECTOR CURRENT (A) 250 200 150 10V 100 50 0 9V 8V 5V 0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 25A C T = 25C J = 15V 35 IC, COLLECTOR CURRENT (A) 30 25 20 TJ= 55C 13V 12V 11V TJ= 125C 15 10 5 0 TJ= 25C TJ= 150C 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 250 12 10 VCE = 180V 8 6 4 2 0 VCE = 450V IC, COLLECTOR CURRENT (A) 200 150 VCE = 720V 100 TJ= 25C TJ= 125C 0 0 2 TJ= -55C 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 4 IC = 50A 3 2 1 0 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 0 50 100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate charge 300 6 5 4 IC = 50A 3 2 IC = 12.5A 1 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 25A IC = 12.5A IC = 25A 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 120 100 50 100 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 0 IC, DC COLLECTOR CURRENT (A) 80 60 40 20 0 052-6333 Rev C 7 - 2009 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 25 50 Typical Performance Curves 16 14 VGE = 15V 12 10 8 6 4 VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H APT43GA90B_S 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 150 100 VGE =15V,TJ=125C 50 VCE = 600V RG = 4.7 L = 100H VGE =15V,TJ=25C 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50 45 40 35 tr, RISE TIME (ns) tr, FALL TIME (ns) 30 25 20 15 10 5 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 2500 2000 TJ = 125C TJ = 25 or 125C,VGE = 15V RG = 4.7, L = 100H, VCE = 600V 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 100 80 60 40 20 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2400 EOFF, TURN OFF ENERGY LOSS (J) 2000 1600 1200 800 400 0 V = 600V CE V = +15V GE R = 4.7 G 0 RG = 4.7, L = 100H, VCE = 600V TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V 0 0 Eon2, TURN ON ENERGY LOSS (J) V = 600V CE V = +15V GE R = 4.7 G TJ = 125C 1500 1000 500 0 TJ = 25C TJ = 25C 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5000 SWITCHING ENERGY LOSSES (J) V = 600V CE V = +15V GE T = 125C J 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J) 2500 2000 1500 1000 500 0 Eoff,25A Eoff,25A Eon2,12.5A Eoff,12.5A V = 600V CE V = +15V GE R = 4.7 G Eon2,50A 4000 Eon2,50A Eon2,50A 3000 Eon2,50A 052-6333 Rev C 7 - 2009 2000 Eoff,25A Eon2,25A 1000 Eoff,12.5A Eon2,12.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100 APT43GA90B_S 1000 10 Coes 100 1 Cres 0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: D = 0.9 0.7 PDM 0.3 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1 052-6333 Rev C 7 - 2009 APT43GA90B_S 10% Gate Voltage td(on) 90% TJ = 125C APT30DQ120 tr V CC IC V CE Collector Current 5% Collector Voltage 5% 10% A D.U.T. Switching Energy Figure 20, Inductive Switching Test Circuit Figure 21, Turn-on Switching Waveforms and Definitions Gate Voltage 90% td(off) TJ = 125C Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 22, Turn-off Switching Waveforms and Definitions TO-247 Package Outline Collector (Cathode) (Heat Sink) D PAK Package Outline e3 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532) 3 e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 052-6333 Rev C 7 - 2009 Gate Collector Emitter Heat Sink (Collector) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Emitter Collector Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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