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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4913 2N4914 2N4915
DESCRIPTION *With TO-3 package *Complement to type 2N4904/4905/4906 *Low collector saturation voltage APPLICATIONS *For general-purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N4913 VCBO Collector-base voltage 2N4914 2N4915 2N4913 VCEO Collector-emitter voltage 2N4914 2N4915 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 5 1 87.5 150 -65~200 V A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N4913 VCEO(SUS) Collector-emitter sustaining voltage 2N4914 2N4915 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEV IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=2.5A; IB=0.25A IC=5A ;IB=1A IC=2.5A ; VCE=2V IC=0.2A ;IB=0
2N4913 2N4914 2N4915
SYMBOL
CONDITIONS
MIN 40 60 80
TYP.
MAX
UNIT
V
1.0 1.5 1.4 1.0 1.0 1.0 2.0 1.0 25 7 4 100
V V V mA mA mA mA
VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=2.5A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=10V;f=1.0MHz
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N4913 2N4914 2N4915
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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