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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD855 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB760 APPLICATIONS *Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 60 60 5 1 2 30 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD855 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 300 A ICES Collector Cutoff Current VCE= 80V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-1 Classifications R 40-90 Q 70-150 ww w P O 120-250 200-450 scs .i VEB= 5V; IC= 0 IC= 0.2A; VCE= 4V IC= 1A; VCE= 4V .cn mi e 40 15 200 A 1 mA 450 isc Websitewww.iscsemi.cn 2 |
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