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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6
BTD882I3
Features
* Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A * Excellent current gain characteristics * Complementary to BTB772I3 * RoHS compliant package
BVCEO IC RCESAT
30V 3A 125m typ.
Symbol
BTD882I3
Outline
TO-251
BBase CCollector EEmitter
BC BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw350s,Duty2%.
BTD882I3
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25) Pd(Tc=25) Tj Tstg
Limit 40 30 5 3 7 1 10 150 -55~+150
Unit V V V A A W C C
*1
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 150 180 Typ. 0.25 90 45 Max. 1 1 0.5 2 560 Unit V V V A A V V MHz pF
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 2/6
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range P 180~390 E 270~560
Ordering Information
Device BTD882I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes/box, 10 boxes/carton Marking D882
BTD882I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Emitter Grounded Output Characteristics
0.25
IB=500uA
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 3/6
Emitter Grounded Output Characteristics
1 Collector Current---IC(A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
IB=0 IB=2.5mA IB=2mA IB=1.5mA IB=1mA IB=500uA
Collector Current---IC(A)
0.2
IB=400uA
0.15 0.1 0.05 0 0
IB=300uA IB=200uA IB=100uA IB=0
1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
6
0
1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
3
IB=10mA
Emitter Grounded Output Characteristics
4.5 4 Collector Current---IC(A) 3.5 3 2.5 2 1.5 1 0.5 0 6 0
IB=0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA
Collector Current---IC(A)
2.5 2 1.5
IB=8mA IB=6mA IB=4mA IB=2mA
1 0.5
IB=0
0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VCE(SAT)
Current Gain---HFE
1000
IC=100IB IC=50IB
100
VCE=2V VCE=1V
100
IC=20IB
10 1 10 100 1000 Collector Current---IC(mA) 10000
10 1 10 100 1000 Collector Current---IC(mA) 10000
BTD882I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 4/6
Capacitance vs Reverse-Biased Voltage
1000
Capacitance---(pF)
Cib
100
1000
Cob
100 1 10 100 1000 Collector Current---IC(mA) 10000
10 0.1 1 10 Reverse-Biased Voltage---(V) 100
Power Derating Curve
1.2
Power Dissipation---PD(W) 12 10 8 6 4 2 0
Power Derating Curve
Power Dissipation---PD(W)
1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Ambient Temperature---TA() 175 200
0
25
50 75 100 125 150 Case Temperature---TC()
175
200
BTD882I3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 5/6
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD882I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A B C D F 3 E K 2 1 J G
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 6/6
Marking:
Device Name
D882
Date Code
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD882I3
CYStek Product Specification

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