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| MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups A, B, C, D and E, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 25 5 700 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Symbol A B C D E hFE hFE hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) Cob fT Min. 110 135 170 200 250 50 30 25 5 0.6 - Typ. 17 160 Max. 180 220 270 320 400 100 100 0.6 0.7 - Unit nA nA V V V V V pF MHz at -VCE = 1 V, -IC = 700 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 A Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter On Voltage at -VCE = 6 V , -IC = 10 mA Output Capacitance at -VCB = 6 V, IE = 0, f = 1 MHz Transition Frequency at -VCE = 6 V, -IC = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/11/2007 MMBTSB624 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/11/2007 |
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