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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD750 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) *Wide Area of Safe Operation *High Current Capability APPLICATIONS *Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 110 80 7 15 30 100 150 V V .cn mi e V A ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD750 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-2 Classifications Q 30-60 P 40-80 w w O 60-120 w. sem isc IC= 1A; VCE= 4V IC= 5A; VCE= 4V IC= 0.5A; VCE= 10V .cn i 40 30 1 30 A 120 MHz isc Websitewww.iscsemi.cn |
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